Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices
TL;DR: In this article, the authors demonstrate the feasibility of high performance resistive switching memory devices based on transition metal oxides by using TiN as the top electrode and demonstrate that the improved switching behavior of these devices could be attributed to the oxygen reservoir effect of TiN electrodes on the formation and rupture of the filamentary conducting paths by modifying the concentration distributions of the oxygen ions and vacancies in ZrO2 thin films.
Abstract: We fabricated the TiN/ZrO2/Pt sandwiched resistive switching memory devices. Excellent bipolar resistive switching characteristics, including a large number of switching cycles and highly uniform switching parameters, as well as long retention time were achieved. The improved switching behavior of TiN/ZrO2/Pt could be attributed to the oxygen reservoir effect of TiN electrodes on the formation and rupture of the filamentary conducting paths by modifying the concentration distributions of the oxygen ions and vacancies in ZrO2 thin films. The results demonstrate the feasibility of high performance resistive switching memory devices based on transition metal oxides by using TiN as the top electrode.
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TL;DR: This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin- film transistors, solar cells, diodes and memories.
Abstract: Optical transparency, tunable conducting properties and easy processability make metal oxides key materials for advanced optoelectronic devices. This Review discusses recent advances in the synthesis of these materials and their use in applications. Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III–V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p–n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.
1,098 citations
21 Oct 2010
TL;DR: In this paper, the authors review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the non-volatile functionalities.
Abstract: In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account of the current understanding of both bipolar and unipolar ReRAM operations. Finally, we summarize the challenges facing the ReRAM technology as it moves toward the beyond-2X-nm generation of nonvolatile memories and the so-called beyond complementary metal-oxide-semiconductor (CMOS) device.
824 citations
01 Jan 2010
TL;DR: The challenges facing the ReRAM technology as it moves toward the beyond-2X-nm generation of nonvolatile memories and the so-called beyond complementary metal-oxide-semiconductor (CMOS) device are summarized.
Abstract: In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account of the current understanding of both bipolar and unipolar ReRAM operations. Finally, we summarize the challenges facing the ReRAM technology as it moves toward the beyond-2X-nm generation of nonvolatile memories and the so-called beyond complementary metal-oxide-semiconductor (CMOS) device.
766 citations
TL;DR: Recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed.
Abstract: In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed. First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. Also, various issues such as endurance, retention, uniformity, and the effect of operating temperature and random telegraph noise (RTN) are elaborated. A discussion on multilevel cell (MLC) storage capability of RRAM, which is attractive for achieving increased storage density and low cost is presented. Different operation schemes to achieve reliable MLC operation along with their physical mechanisms have been provided. In addition, an elaborate description of switching methodologies and current voltage relationships for various popular RRAM models is covered in this work. The prospective applications of RRAM to various fields such as security, neuromorphic computing, and non-volatile logic systems are addressed briefly. The present review article concludes with the discussion on the challenges and future prospects of the RRAM.
379 citations
TL;DR: In this article, a review of materials and device physics studies on functional metal oxides that may be utilized for adaptive electronics is presented, and the physical mechanisms in each case are detailed and analyzed within the framework of adaptive electronics.
Abstract: Novel information processing techniques are being actively explored to overcome fundamental limitations associated with CMOS scaling. A new paradigm of adaptive electronic devices is emerging that may reshape the frontiers of electronics and enable new modalities. Creating systems that can learn and adapt to various inputs has generally been a complex algorithm problem in information science, albeit with wide-ranging and powerful applications from medical diagnosis to control systems. Recent work in oxide electronics suggests that it may be plausible to implement such systems at the device level, thereby drastically increasing computational density and power efficiency and expanding the potential for electronics beyond Boolean computation. Intriguing possibilities of adaptive electronics include fabrication of devices that mimic human brain functionality: the strengthening and weakening of synapses emulated by electrically, magnetically, thermally, or optically tunable properties of materials.In this review, we detail materials and device physics studies on functional metal oxides that may be utilized for adaptive electronics. It has been shown that properties, such as resistivity, polarization, and magnetization, of many oxides can be modified electrically in a non-volatile manner, suggesting that these materials respond to electrical stimulus similarly as a neural synapse. We discuss what device characteristics will likely be relevant for integration into adaptive platforms and then survey a variety of oxides with respect to these properties, such as, but not limited to, TaOx, SrTiO3, and Bi4-xLaxTi3O12. The physical mechanisms in each case are detailed and analyzed within the framework of adaptive electronics. We then review theoretically formulated and current experimentally realized adaptive devices with functional oxides, such as self-programmable logic and neuromorphic circuits. Finally, we speculate on what advances in materials physics and engineering may be needed to realize the full potential of adaptive oxide electronics.
287 citations
References
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TL;DR: In this article, the influence of top electrode material on the resistive switching properties of ZrO2-based memory film using Pt as a bottom electrode was investigated, and the reliability results, such as cycling endurance and continuous readout test, were also presented.
Abstract: The influence of top electrode material on the resistive switching properties of ZrO2-based memory film using Pt as a bottom electrode was investigated in this letter. In comparison with Pt/ZrO2/Pt and Al/ZrO2/Pt devices, the Ti/ZrO2/Pt device exhibits different resistive switching current-voltage (I- V) curve, which can be traced and reproduced by a dc voltage more than 1000 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, the broad dispersions of resistive switching characteristics in the Pt/ZrO2/Pt and Al/ZrO2/Pt devices are generally observed during successive resistive switching, but those dispersions are suppressed by the device using Ti as a top electrode. The reliability results, such as cycling endurance and continuous readout test, are also presented. The write-read-erase-read operations can be over 104 cycles without degradation. No data loss is found upon successive readout after performing various endurance cycles
329 citations
TL;DR: In this article, the bipolar resistive switching characteristics of Pt/rutile-TiO2∕TiN devices for resistance memory applications were investigated, and data writing for five-level resistance states has been demonstrated by varying the amplitude of 5ns voltage pulses.
Abstract: We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile-TiO2∕TiN devices for resistance memory applications. Data writing for five-level resistance states has been demonstrated by varying the amplitude of 5ns voltage pulses. In addition, data retention of more than 256h at 85°C and an excellent endurance of over 2×106cycles have been confirmed. These results indicate that Pt∕TiO2∕TiN devices have a potential for nonvolatile multiple-valued memory devices.
268 citations
234 citations
TL;DR: In this paper, the surface oxidized layer of a TiN barrier metal thin film grown on a Pt electrode was used as a resistive switching material and the fabricated memory cell showed bipolar resistive switches on a nanosecond order.
Abstract: The surface oxidized layer of a TiN barrier metal thin film grown on a Pt electrode was used as a resistive switching material. The fabricated memory cell shows bipolar resistive switching on a nanosecond order. A TiO2 anatase layer of about 2.5nm thick on TiN thin film was characterized by high-resolution scanning transmission electron microscopy. The results suggested that the high-speed resistive change was derived from the Mott transition in the TiO2 anatase nanolayer, and the obtained results could relate to the formation of filament paths previously reported in binary transition metal oxide thin films exhibiting resistive switching.
214 citations
TL;DR: In this article, resistive switching characteristics of ZrO2 films with gold nanocrystals (nc-Au) were investigated for nonvolatile memory applications, and it was shown that the resistive switch behavior is reproducible and the ratio between high and low resistances can be as high as two orders.
Abstract: Resistive switching characteristics of ZrO2 films containing gold nanocrystals (nc-Au) are investigated for nonvolatile memory applications. The sandwiched top electrode/ZrO2 (with nc-Au embedded)/n+ Si structure exhibits two stable resistance states (high-resistance state and low-resistance state). By applying proper voltage bias, resistive switching from one state to the other state can be achieved. This resistive switching behavior is reproducible and the ratio between the high and low resistances can be as high as two orders. The intentionally introduced nc-Au in ZrO2 films can improve the device yield greatly. ZrO2 films with gold nanocrystals embedded are promising to be used in the nonvolatile resistive switching memory devices.
183 citations