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Hot electron diffusion in CdTe
M. Deb Roy,B. R. Nag +1 more
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TLDR
In this paper, the parallel and transverse components of diffusion constants of electrons in CdTe have been computed for fields of 30, 40, and 50 kV/cm using the Monte Carlo method.Abstract:
The parallel and transverse components of diffusion constants of electrons in CdTe have been computed for fields of 30, 40, and 50 kV/cm using the Monte Carlo method. Results are presented for the velocity autocorrelation function and for the ac diffusion constants for two models of energy band structure and scattering constants, used earlier in the literature. The diffusion constants as obtained from the two models are significantly different, but none are in agreement with the available experimental results.read more
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High-field transport properties of In 0.765 Ga 0.235 As 0.5 P 0.5
TL;DR: In this article, Monte Carlo results on the velocity-field characteristics, ac diffusion-constant and thermal-noise voltages are presented for In0.765Ga 0.235As 0.5P0.5 at 300K.
References
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Electron transport in compound semiconductors
TL;DR: In this paper, the Boltzmann Transport Equation is used to calculate the collision probability of the Sphalerite and the Chalcopyrite structures, and the Brillouin Zone is used for the Wurtzite structure.
Journal ArticleDOI
Transport Properties of CdTe
TL;DR: The drift-velocity characteristic for electrons in CdTe has been measured by the transientcharge technique from 77 to 370 \ifmmode^\circ\else\text degree\fi{}K and for electric fields up to 70 kV/cm as mentioned in this paper.
Journal ArticleDOI
Noise sources in transport equations associated with ambipolar diffusion and Shockley-Read recombination
TL;DR: In this paper, a discussion of the noise sources which enter into the stochastic transport equations which govern carrier flow in SCL diodes and ordinary junction devices is presented.
Journal ArticleDOI
Monte Carlo Calculations on Electron Transport in CdTe
V. Borsari,C. Jacoboni +1 more
TL;DR: In this article, a theoretical analysis of high-field electron transport in CdTe has been performed with the Monte Carlo technique for different temperatures and ionized impurity contents, and the present theoretical results are discussed and compared with recent experimental data.
Journal ArticleDOI
Electron diffusion in CdTe
TL;DR: In this paper, the authors studied the effect of polar optical scattering on the initial spreading of a delta distribution of electrons in CdTe at 300°K with the Monte Carlo technique and found that at fields around and above threshold the large spread of electron velocities causes an initial diffusion much greater than that predicted by the macroscopic equation.