Journal ArticleDOI
Hot‐electron velocity overshoot in Ga0.47In0.53As
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Abstract:
Velocity overshoot phenomena in Ga0.47In0.53As to the application of uniform electric fields are investigated using recent values of the material parameters. The effects of the ambient temperature and of the doping concentration are studied. The material is found to yield peak drift velocities larger than those in GaAs. The values of the peak velocity are greater for short lengths of the active region, low impurity concentration, and low ambient temperatures.read more
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Electron transport properties of strained InxGa1−xAs
TL;DR: In this paper, the effect of strain on electron transport properties of bulk InGaAs was investigated and it was found that strain-induced velocity reduction is much more pronounced for InGAAs grown on GaAs substrate than for InP substrate.
Journal ArticleDOI
A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates
TL;DR: In this article, a 0.12-m T-shaped gate with lattice-mismatched GaAs substrates with a 3.8% difference of lattice constants has been used for growing Al/Sub 0.5/In/sub 0.4/As/Ga/sub 1.0/As MODFETs on lattice matched InP substrates.
Journal ArticleDOI
Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors
Gargi Sharma,Luca Razzari,F. H. Su,François Blanchard,A. Ayesheshim,Tyler L. Cocker,Lyubov V. Titova,H.-C. Bandulet,Tsuneyuki Ozaki,Jean-Claude Kieffer,Roberto Morandotti,M. Reid,Frank A. Hegmann +12 more
TL;DR: In this article, the nonlinear dynamics of free carriers in direct bandgap semiconductors at terahertz (THz) frequencies were studied using the intense few-cycle source available at the Advanced Laser Light Source (ALLS).
Journal ArticleDOI
Strong Spatial Dependence of Electron Velocity, Density, and Intervalley Scattering in an Asymmetric Nanodevice in the Nonlinear Transport Regime
TL;DR: In this paper, a 2D ensemble Monte Carlo method was used to study the electron transport in a self-switching device, which is a semiconductor rectifier consisting of an asymmetric nanochannel.
Journal ArticleDOI
Broadband photonic terahertz-wave emitter integrating uni-traveling-carrier photodiode and self-complementary planar antenna
TL;DR: In this article, two types of photonic terahertz-wave emitters integrating self-complementary planar antennas (a log-periodic antenna or a bowtie antenna) and InP/InGaAs uni-traveling-carrier photodiodes have been fabricated and assembled in compact quasi-optical packages.
References
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Journal ArticleDOI
Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.
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Gallium Arsenide and Related Compounds
TL;DR: The maturity of this work on III-V compounds is clear from this volume of papers from the fourth international conference, at Boulder, Colorado as discussed by the authors, and many areas prominent at earlier conferences are largely absent: bulk crystal growth, vapour phase epitaxy, light and infrared emitting diodes, lasers, mixers and varactors.
Book
GaInAsP alloy semiconductors
TL;DR: In this paper, the authors provide an in-depth introduction to the growth, characterization, and device technology of the GaInAsP conductor, the cornerstone of the optical fiber telecommunications industry.
Journal ArticleDOI
The influence of interelectronic collisions on conduction and breakdown in polar crystals
TL;DR: In this paper, the variation of electron mobility with an increasing applied field and also the collective dielectric breakdown field, assuming that interelectronic collisions are sufficiently frequent to determine the energy and momentum distributions of the electron gas.
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Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's
TL;DR: In this article, a comparison between the frequency behavior of various semiconductor materials is presented, and it is shown that the dynamic properties for a given material are ameliorated for greater values of the product \mu{0} \Delta \epsilon_{\Gamma L}.