Open Access
Hot Pixel Generation in Active Pixel Sensors: Dosimetric and Micro-dosimetric Response
Leif Scheick,Frank Novak +1 more
- Vol. 536, pp 471
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TLDR
In this article, the dosimetric response of an active pixel sensor is analyzed and heavy ions are seen to damage the pixel in much the same way as gamma radiation, and the probability of a hot pixel is seen to exhibit behavior that is not typical with other microdose effects.Abstract:
The dosimetric response of an active pixel sensor is analyzed. heavy ions are seen to damage the pixel in much the same way as gamma radiation. The probability of a hot pixel is seen to exhibit behavior that is not typical with other microdose effects.read more
Citations
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Journal ArticleDOI
Proton-Induced Single-Event Degradation in SDRAMs
A. Rodriguez,Frédéric Wrobel,A. Samaras,Francoise Bezerra,B. Vandevelde,Robert Ecoffet,Antoine Touboul,N. Chatry,Luigi Dilillo,Frédéric Saigné +9 more
TL;DR: In this paper, the authors studied the cell functionality degradation under proton irradiation for SDRAM references that exhibit in-flight faulty behavior on satellites, which results from one or more damage clusters created by a single particle.
Proceedings ArticleDOI
A chip and pixel qualification methodology on imaging sensors
TL;DR: In this paper, the authors present a qualification methodology on imaging sensors based on overall chip reliability characterization based on sensor's overall figure of merit, such as Dark Rate, Linearity, Dark Current Non-Uniformity, Fixed Pattern Noise and Photon Response Non-uniformity.
Proceedings ArticleDOI
Evaluation of 10MeV Proton Irradiation on 5.5 Mpixel Scientific CMOS Image Sensor
TL;DR: In this paper, the effects of 10 MeV proton irradiation on the performance of a 5.5 Mpixel scientific grade CMOS image sensor based on a 5T pixel architecture with pinned photodiode and transfer gate were evaluated.
Journal ArticleDOI
Measurement of device parameters using image recovery techniques in large-scale IC devices
Leif Scheick,L.D. Edmonds +1 more
TL;DR: In this article, a method of extracting device characteristics and parameters from measured distributions via mathematical and image subtraction techniques is described, which is the convolution of distributions from radiation responses, measurement noise, and manufacturing parameters.
CMOS active pixel sensor technology and reliability characterization methodology
TL;DR: The technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor are described and both overall chip reliability and pixel reliability are projected for the imagers.
References
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Journal ArticleDOI
Nonionizing energy loss (NIEL) for heavy ions
S.R. Messenger,E.A. Burke,G.P. Summers,M.A. Xapsos,Robert J. Walters,Eric M. Jackson,B.D. Weaver +6 more
TL;DR: In this article, the authors used the Monte Carlo code SRIM to estimate the nonionizing energy loss (NIEL) of heavy ions in the coulombic limit.
Journal ArticleDOI
Proton effects in charge-coupled devices
TL;DR: In this paper, basic mechanisms and ground-test data for radiation effects in solid-state imagers are reviewed, with a special emphasis on proton-induced effects on silicon charge-coupled devices (CCDs).
Proceedings ArticleDOI
Active pixel sensor (APS) based star tracker
TL;DR: In this paper, an active pixel sensor (APS) was used as a potential replacement to CCDs for star tracker applications, and the sensitivity of an APS pixel was measured to 13600 e/sup -/(second.mm/sup 2/) for a 0/sup th/ magnitude star.
Journal ArticleDOI
Enhanced dark current generation in proton-irradiated CMOS active pixel sensors
TL;DR: In this paper, the dark current increase due to proton-induced displacement damage is studied in a standard and a radiation-hardened CMOS active pixel sensor (APS) and several devices have been irradiated with protons of different energies and fluences.
Proceedings ArticleDOI
CMOS active pixel image sensor with CCD performance
TL;DR: In this article, a color CMOS image sensor has been developed which meets the performance of mainstream CCDs, which yields a high light sensitivity, expressed by the conversion gain of 9 (mu) V/electron and the quantum efficiency fill factor product of 28 percent.