Proceedings ArticleDOI
Hydrodynamic simulation of RF noise in deep-submicron MOSFETs
Tae-Young Oh,Christoph Jungemann,Robert W. Dutton +2 more
- pp 87-90
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TLDR
In this paper, a noise model for MOSFETs based on analytical microscopic noise sources has been developed and noise simulations based on the hydrodynamic model have been performed.Abstract:
A noise model for MOSFETs based on analytical microscopic noise sources has been developed and noise simulations based on the hydrodynamic model have been performed. The drain and gate excess noise parameters and correlation coefficient are extracted and the reasons for noise parameter dependence on the channel length are explained.read more
Citations
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Journal ArticleDOI
Noise modeling methodologies in the presence of mobility degradation and their equivalence
TL;DR: In this article, a general expression of induced gate noise was presented, which is valid for any mobility model and some very general expressions of noise parameters that can be used for noise modeling with any kind of mobility model.
Journal ArticleDOI
Do hot electrons cause excess noise
TL;DR: In this paper, the authors solved the Langevin Boltzmann equation for the first time and showed that the contribution of hot electrons in a velocity saturation region is negligible, which corroborates previous findings based on the less accurate impedance field method.
Journal ArticleDOI
Impact of downscaling and poly-gate depletion on the RF noise parameters of advanced nMOS transistors
S. Nuttinck,Andries J. Scholten,L.F. Tiemeijer,F. Cubaynes,C.J.J. Dachs,C. Detcheverry,E.A. Hijzen +6 more
TL;DR: In this paper, the effects of poly depletion on the RF noise performance of advanced CMOS transistors are reported and analyzed based on measurements and physical device simulations, and the authors quantify the increasing danger of poly gate depletion with downscaling on RF noise parameters of CMOS devices.
Proceedings ArticleDOI
Do hot electrons produce excess noise
TL;DR: In this paper, the Langevin Boltzmann equation was used to investigate the spatial origin of the terminal current noise in the case of hot or cold electrons, and it was shown that the contribution of hot electrons in a velocity-saturation region is negligible.
Journal ArticleDOI
Microscopic simulation of RF noise in junctionless nanowire transistors
Maziar Noei,Christoph Jungemann +1 more
TL;DR: In this article, a deterministic solver for the analysis of microscopic noise and small-signal fluctuations in junctionless nanowire field effect transistors is presented, which is based on a selfconsistent and simultaneous solution of the Poisson/Schrodinger/Boltzmann equations.
References
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Book
Noise in solid state devices and circuits
TL;DR: In this paper, the authors propose a method to generate 1/f noise noise in particular Amplifier Circuits Mixers by using thermal noise shot and flicker noise, respectively.
Journal ArticleDOI
The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors
Bernd Meinerzhagen,W.L. Engl +1 more
TL;DR: In this article, it is shown that the classical equations are accurate for predicting drain current for devices with effective channel lengths as small as 0.3 mu m. However, accurate substrate current modeling requires a more detailed level of simulation even for devices having longer channel lengths.
Journal ArticleDOI
Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements
TL;DR: In this paper, an extraction method to obtain the induced gate noise (i~/sub g/~/sup 2/~) channel noise and their cross correlation in submicron MOSFETs directly from scattering and RF noise measurements has been presented and verified by measurements.
Journal ArticleDOI
Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results
TL;DR: In this paper, Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup+/ and P/sup plus/ PP/Sup +/ structures and a realistic two-dimensional SiGe NPN HBT were investigated.
Proceedings ArticleDOI
Compact modeling of drain and gate current noise for RF CMOS
A.J. Scholten,L.F. Tiemeijer,R. van Langevelde,R.J. Havens,V. C. Venezia,A.T.A. Zegers-van Duijnhoven,B. Neinhus,Christoph Jungemann,D.B.M. Klaasen +8 more
TL;DR: In this article, a model for RF CMOS circuit design is presented that is capable of predicting drain and gate current noise without adjusting any parameters, and the presence of noise associated with avalanche multiplication and shot noise of the direct-tunneling gate current in leaky dielectrics is revealed.
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