Proceedings ArticleDOI
Hydrodynamic simulation of RF noise in deep-submicron MOSFETs
Tae-Young Oh,Christoph Jungemann,Robert W. Dutton +2 more
- pp 87-90
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TLDR
In this paper, a noise model for MOSFETs based on analytical microscopic noise sources has been developed and noise simulations based on the hydrodynamic model have been performed.Abstract:
A noise model for MOSFETs based on analytical microscopic noise sources has been developed and noise simulations based on the hydrodynamic model have been performed. The drain and gate excess noise parameters and correlation coefficient are extracted and the reasons for noise parameter dependence on the channel length are explained.read more
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Journal ArticleDOI
ANALOG AND DIGITAL PERFORMANCE OF THE SCREEN-GRID FIELD EFFECT TRANSISTOR (SGrFET)
TL;DR: In this paper, TCAD results are presented on the analog and digital performance of the Screen-Grid Field Effect Transistor (SGrFET) and compared to the operation of an SOI-MOSFET and a finFET.
Journal ArticleDOI
Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach
Dino Ruic,Christoph Jungemann +1 more
TL;DR: In this article, the authors compute small-signal and noise quantities of nMOSFETs with different channel lengths with a fully self-consistent and deterministic Poisson, Schrodinger, and Boltzmann equation solver.
References
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Book
Noise in solid state devices and circuits
TL;DR: In this paper, the authors propose a method to generate 1/f noise noise in particular Amplifier Circuits Mixers by using thermal noise shot and flicker noise, respectively.
Journal ArticleDOI
The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors
Bernd Meinerzhagen,W.L. Engl +1 more
TL;DR: In this article, it is shown that the classical equations are accurate for predicting drain current for devices with effective channel lengths as small as 0.3 mu m. However, accurate substrate current modeling requires a more detailed level of simulation even for devices having longer channel lengths.
Journal ArticleDOI
Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements
TL;DR: In this paper, an extraction method to obtain the induced gate noise (i~/sub g/~/sup 2/~) channel noise and their cross correlation in submicron MOSFETs directly from scattering and RF noise measurements has been presented and verified by measurements.
Journal ArticleDOI
Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results
TL;DR: In this paper, Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup+/ and P/sup plus/ PP/Sup +/ structures and a realistic two-dimensional SiGe NPN HBT were investigated.
Proceedings ArticleDOI
Compact modeling of drain and gate current noise for RF CMOS
A.J. Scholten,L.F. Tiemeijer,R. van Langevelde,R.J. Havens,V. C. Venezia,A.T.A. Zegers-van Duijnhoven,B. Neinhus,Christoph Jungemann,D.B.M. Klaasen +8 more
TL;DR: In this article, a model for RF CMOS circuit design is presented that is capable of predicting drain and gate current noise without adjusting any parameters, and the presence of noise associated with avalanche multiplication and shot noise of the direct-tunneling gate current in leaky dielectrics is revealed.
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