Journal ArticleDOI
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
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In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.Abstract:
Data are presented on the conversion (selective conversion) of high‐composition (AlAs)x(GaAs)1−x layers, e.g., in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C). Hydrolyzation oxidation of a fine‐scale AlAs(LB)‐GaAs(Lz) SL (LB +Lz≲100 A), or random alloy AlxGa1−xAs (x≳0.7), is observed to proceed more slowly and uniformly than a coarse‐scale ‘‘alloy’’ such as an AlAs‐GaAs superlattice with LB + Lz≳200 A.read more
Citations
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Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers
TL;DR: In this article, a new process for fabrication of vertical-cavity surface-emitting laser based on the selective conversion of high-Al composition epitaxial AlGaAs to a stable native oxide using "wet oxidation" is presented.
Journal ArticleDOI
Photonic crystals in the optical regime — past, present and future
TL;DR: The aim of this review is to introduce the reader to the concepts of photonic crystals, describe the state of the art and attempt to answer the question of what uses these peculiar structures may have.
Journal ArticleDOI
Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
TL;DR: In this paper, the InGaAs single quantum well vertical-cavity surface-emitting laser with an intracavity p-contact fabricated by selective oxidation of AlAs and distributed Bragg reflectors composed of binary materials (AlAs/GaAs).
Journal ArticleDOI
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
Raphaël Butté,J.-F. Carlin,Eric Feltin,M. Gonschorek,Sylvain Nicolay,Gabriel Christmann,D. Simeonov,A. Castiglia,J. Dorsaz,H. J. Buehlmann,Stavros Christopoulos,G. Baldassarri Höger von Högersthal,A. J. D. Grundy,Mauro Mosca,Mauro Mosca,C. Pinquier,C. Pinquier,M. A. Py,F. Demangeot,J. Frandon,Pavlos G. Lagoudakis,Jeremy J. Baumberg,Nicolas Grandjean +22 more
TL;DR: In this paper, the structural and optical properties of lattice-matching AlInN layers to GaN have been investigated and their specific use to realize nearly strain-free structures for photonic and electronic applications has been discussed.
Journal ArticleDOI
Phase matching using an isotropic nonlinear optical material
TL;DR: In this paper, a quasi-phase matching scheme was proposed to compensate for optical dispersion, which results in different phase velocities for light of different frequencies in anisotropic birefringent crystals.
References
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Journal ArticleDOI
Disorder of an AlAs‐GaAs superlattice by impurity diffusion
Abstract: Data are presented showing that Zn diffusion into an AlAs‐GaAs superlattice (41 Lz∼45‐A GaAs layers, 40 LB∼150‐A AlAs layers), or into AlxGa1−xAs‐GaAs quantum‐well heterostructures, increases the Al‐Ga interdiffusion at the heterointerfaces and creates, even at low temperature (<600 °C), uniform compositionally disordered AlxGa1−xAs. For the case of the superlattice, the diffusion‐induced disordering causes a change from direct‐gap AlAs‐GaAs (Eg∼1.61 eV) to indirect‐gap AlxGa1−xAs (x∼0.77, EgX∼2.08 eV).
Journal ArticleDOI
Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
D. G. Deppe,N. Holonyak +1 more
TL;DR: In this article, a large variety of experimental data on IILD are discussed and provide newer information and further perspective on crystal self-diffusion, impurity diffusion, and also the important defect mechanisms that control diffusion in AlxGa1−xAs-GaAs, and in related III-V semiconductors.
Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TL;DR: In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.
Journal ArticleDOI
IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity
TL;DR: In this paper, a disk-shaped IR•red (Eg ∼ 1.61 eV) GaAs•AlAs superlattice laser is demonstrated to be monolithically integrated into rectangular yellow-gap AlxGa1−xAs [x∼LB/(Lz+LB), EgX∼2.08 eV] cavities.
Journal ArticleDOI
Surface Protection and Selective Masking during Diffusion in Silicon
C. J. Frosch,L Derick +1 more
TL;DR: In this article, an apparatus for the vapor-solid diffusion of donors and acceptors into silicon at atmospheric pressure is described, which consists essentially of a fused silica tube extending through one or more controlled temperature zones.