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Patent

III-V compound semiconductor

TL;DR: In this paper, a III-V compound semiconductor having a layer formed from a first III-v compound semiconductors expressed by the general formula InuGavAlwN (where u+v+w=1) was described, where the full width at half maximum of the (0004) reflection X-ray rocking curve of the second III-vectors was 700 seconds or less regardless of the direction of X-rays incidence.
Abstract: Provided is a III-V compound semiconductor having a layer formed from a first III-V compound semiconductor expressed by the general formula InuGavAlwN (where 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1), a pattern formed on the layer from a material different not only from the first III-V compound semiconductor but also from a second III-V compound semiconductor hereinafter described, and a layer formed on the first III-V compound semiconductor and the pattern from the second III-V compound semiconductor expressed by the general formula InxGayAlzN (where 0≦x≦1, 0≦y≦1, 0≦x≦1, x+y+z=1), wherein the full width at half maximum of the (0004) reflection X-ray rocking curve of the second III-V compound semiconductor is 700 seconds or less regardless of the direction of X-ray incidence. In the III-V compound semiconductor, which is a high quality semiconductor, the occurrence of low angle grain boundaries is suppressed.
Citations
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Patent
30 Jan 2006
TL;DR: In this paper, the authors use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates.
Abstract: Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.

68 citations

Journal ArticleDOI
TL;DR: The results of total energy density functional theory and ab initio molecular dynamics simulations of (001) surfaces of InP and GaP in contact with gas-phase and liquid water are reported in this article.
Abstract: We report the results of total-energy density functional theory and ab initio molecular dynamics simulations of (001) surfaces of InP and GaP in contact with gas-phase and liquid water. Both pristine and oxygen-rich surfaces (representing a submonolayer native surface oxide) are considered. We find that gas-phase binding of water on pristine mixed-dimer δ(2×4) reconstructions of InP/GaP(001) is comparable to the solvation energy of liquid water, and that the barriers for room-temperature dissociation are high. In the presence of a submonolayer surface oxide, water binding and dissociation instead become strongly exothermic and proceed with almost no barrier. In this case, the surface chemistry at the interface with liquid water differs significantly from that of gas-phase water adsorption due to the formation of strong, low-barrier hydrogen bonds between surface adsorbates and water molecules. Water dissociation on the oxygen-rich surface is accompanied by extremely rapid local proton hopping between hydr...

49 citations

Patent
02 May 2006
TL;DR: In this article, a group 3-5 nitride semiconductor multilayer substrate and a method for manufacturing such a substrate are provided, where a semiconductor layer (12) is formed on a base substrate, and a mask (13) is created on the mask by selective growing.
Abstract: A group 3-5 nitride semiconductor multilayer substrate ( 1 ) and a method for manufacturing such substrate are provided. A semiconductor layer ( 12 ) is formed on a base substrate ( 11 ), and a mask ( 13 ) is formed on the semiconductor layer ( 12 ). Then, after forming a group 3-5 nitride semiconductor crystalline layer ( 14 ) by selective growing, the group 3-5 nitride semiconductor crystalline layer ( 14 ) and the base substrate ( 11 ) are separated. The crystallinity of the semiconductor layer ( 12 ) is lower than that of the group 3-5 nitride semiconductor crystalline layer ( 14 ).

27 citations

Patent
24 Aug 2006
TL;DR: In this paper, a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free standing semiconducting substrate is described. But the substrate self-separates from the starting substrate without further process steps.
Abstract: The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide and wherein the semiconductor substrate self-separates from the starting substrate without further process steps.

12 citations

Book ChapterDOI
01 Jan 2005
TL;DR: In this paper, the atomic structure and thermodynamics of the wetting layer formed by InAs deposition on GaAs(001), including the effect of strain in their discussion, are investigated.
Abstract: Density-functional theory calculations are employed to obtain important information about the morphology of III–V semiconductor surfaces and kinetics of epitaxial growth. In this way, insight into the microscopic processes governing quantum dot formation in InAs/GaAs(001) heteroepitaxy is gained. First, we investigate theoretically the atomic structure and thermodynamics of the wetting layer formed by InAs deposition on GaAs(001), including the effect of strain in our discussion. Secondly, we present results about In adatom diffusion both on the wetting layer and on the c(4 × 4)-reconstructed GaAs(001) surface. In the latter case, we demonstrate the importance of mechanical stress for the height of surface diffusion barriers. Implications for the growth of InAs quantum dots on GaAs(001) are discussed.

6 citations

References
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Journal ArticleDOI
TL;DR: In this article, defect structures in GaN films grown selectively in hydride vapor-phase epitaxy (HVPE) were characterized by transmission electron microscopy (TEM) defect structures.
Abstract: We have characterized by transmission electron microscopy (TEM) defect structures in GaN films grown selectively in hydride vapor-phase epitaxy (HVPE). In this experiment, growth was achieved on SiO2-stripe-patterned GaN layers that had been grown by metalorganic vapor-phase epitaxy (MOVPE) on sapphire substrates. Cross-sectional TEM revealed unambiguously that most of the dislocations, which originated from threading dislocations vertically aligned in the MOVPE-grown layer, propagated laterally around the SiO2 mask in the HVPE-grown film before the film thickness amounted to about 5 μm. This change of the propagation direction prevented the dislocations from crossing the film to the surface region and thus principally led to a drastic reduction in the threading dislocation density in thicker films.

452 citations

Patent
Hiroyuki Kiyoku1, Shuji Nakamura1, Tokuya Kozaki1, Naruhito Iwasa1, Kazuyuki Chocho1 
09 Apr 1998
TL;DR: In this article, a method of growing a nitride semiconductor crystal having very few crystal defects and capable of being used as a substrate, comprising the step of forming a first selective growth mask equipped with a plurality of first windows for selectively exposing the surface of a support on the support having a main plane and including different kinds of substrates made of materials different from those of a polysilicon semiconductor, was proposed.
Abstract: A method of growing a nitride semiconductor crystal having very few crystal defects and capable of being used as a substrate, comprising the step of forming a first selective growth mask equipped with a plurality of first windows for selectively exposing the surface of a support on the support having a main plane and including different kinds of substrates made of materials different from those of a nitride semiconductor, and the step of growing the nitride semiconductor, by using a gaseous Group III element source and a gaseous nitrogen source, until portions of the nitride semiconductor crystal growing in adjacent windows from the surface of the support exposed from the window join with one another on the upper surface of the selective growth mask.

440 citations

Journal ArticleDOI
TL;DR: In this article, gallium nitride thin films were successfully separated and transferred onto Si substrates using single 38 ns KrF excimer laser pulses directed through the transparent substrate at fluences in the range of 400-600 mJ/cm2.
Abstract: Gallium nitride thin films grown on sapphire substrates were successfully separated and transferred onto Si substrates using single 38 ns KrF excimer laser pulses directed through the transparent substrate at fluences in the range of 400–600 mJ/cm2. The absorption of the 248 nm radiation by the GaN at the interface induces rapid thermal decomposition of the interfacial layer, yielding metallic Ga and N2 gas. The substrate is easily removed by heating above the Ga melting point of 30 °C. Scanning electron microscopy and x-ray diffraction of the GaN films before and after lift-off demonstrate that the structural quality of the GaN films is not altered by the separation and transfer process.

382 citations

Patent
03 Feb 1995
TL;DR: In this article, a green-blue-to- ultraviolet light-emitting optical device is defined by mesa etching, which avoids possible damage to the active area during dicing.
Abstract: A green-blue to ultraviolet light-emitting optical device, e.g. a green-blue to ultraviolet emitting laser or a green-blue to ultraviolet emitting diode, comprising a green-blue to ultraviolet light emitting gallium nitride material on a base structure including a silicon carbide substrate, which preferably consists of 2H-SiC, 4H-SiC, or a-axis oriented 6H-SiC. The carrier mobility and the transparency of the silicon carbide substrate are optimized by the selection of orientation and polytype, thus enhancing device performance. The light-emitting diodes may incorporate a structural modification to increase the light output comprising a dielectric Bragg mirror beneath the LED structure, made of alternating layers of AlN, GaN, InN or their alloys. Methods for making such light-emitting diodes are provided, including a technique for defining individual devices by mesa etching which avoids possible damage to the active area during dicing.

326 citations

Patent
12 Jul 2002
TL;DR: In this article, the underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the gallium oxide layer is etched through the arrays of openings to define posts in the underlying GN and trenches there between.
Abstract: An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.

212 citations