Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor
Citations
11 citations
11 citations
Cites background from "Impact of a Spacer Dielectric and a..."
...Other tunneling suppression techniques like gate overlap [6] and heterojunctions employing high band gap material in nontunneling regions [7] can also be used as an alternative to oxide....
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11 citations
Cites background or result from "Impact of a Spacer Dielectric and a..."
...This observation is in sync with the reported results on gate dielectric constant variation in TFET [16-19]....
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...In accordance with reported literatures on gate dielectric constant variation in TFET [16-19], the gate induced fringing field effect over source region can be identified as the key contributing factor for conduction band lowering at the source side of tunneling junction of DMTFET....
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10 citations
Additional excerpts
...…2017 Informa UK Limited, trading as Taylor & Francis Group κ-spacer, and source pocket (Bhuwalka, Schulze, & Eisele, 2005; Boucart & Ionescu, 2007; Chattopadhyay & Mallik, 2011; H-Toh, Wang, Samudra, & Yeo, 2007; Ionescu & Riel, 2011; Kim, Kam, & Liu, 2009; Poon, Yau, Johnston, & Beecham,…...
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10 citations
References
1,583 citations
"Impact of a Spacer Dielectric and a..." refers background in this paper
...Both the theoretical and experimental results show that S can be much lower than 60 mV/dec for a TFET [6]–[8]....
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1,230 citations
847 citations
"Impact of a Spacer Dielectric and a..." refers background in this paper
...Again, the device current depends upon the tunnel width and the electric field across the tunneling junction [23], and this has...
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428 citations
347 citations
"Impact of a Spacer Dielectric and a..." refers background in this paper
...2101603 Moore’s law, the tunnel FET (TFET) shows great promise [1]–...
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