Journal ArticleDOI
Impact of distributed gate resistance on the performance of MOS devices
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TLDR
In this article, the impact of gate resistance on cut-off frequency, maximum frequency of oscillation (f/sub max/), thermal noise, and time response of wide MOS devices with deep submicron channel lengths was analyzed.Abstract:
This paper describes the impact of gate resistance on cut-off frequency (f/sub T/), maximum frequency of oscillation (f/sub max/), thermal noise, and time response of wide MOS devices with deep submicron channel lengths. The value of f/sub T/ is proven to be independent of gate resistance even for distributed structures. An exact relation for f/sub max/ is derived and it is shown that, to predict f/sub max/, thermal noise, and time response, the distributed gate resistance can be divided by a factor of 3 and lumped into a single resistor in series with the gate terminal. >read more
Citations
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Proceedings ArticleDOI
A 1.5 V, 1.5 GHz CMOS low noise amplifier
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References
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Book
Microwave Solid State Circuit Design
Inder J. Bahl,Prakash Bhartia +1 more
TL;DR: In this paper, Pramanick and Bhartia presented an approach for impedance transformation techniques in RF MEMS devices and circuit applications, which can be found in the Appendix A: Units and Symbols. Appendix B: Physical constants and other data.
Journal ArticleDOI
Microwave properties of Schottky-barrier field-effect transistors
TL;DR: In this paper, the microwave properties of the Schottky-barrier field effect transistor (MESFET) with a gate-length of one micrometer are investigated.
Journal ArticleDOI
On the stability of a certain class of nonlinear sampled-data systems
E. I. Jury,B. Lee +1 more
TL;DR: In this article, a sufficient condition for stability of a class of sampled-data feedback systems containing a memoryless, nonlinear gain element is derived from the frequency response of the linear plant.
Book
Theory of Linear Active Networks
Ernest S. Kuh,R.A. Rohrer +1 more
TL;DR: Powdered acidophil fermented milk products that can be readily reconstituted are prepared by spray drying milk which has been fermented withacidophil bacteria to produce a powdered product and agglomerating the powdered product.
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On the Absolute Stability of Sampled-Data Control Systems
TL;DR: One wants to derive a sufficient condition for the existence of a Liapunov function of the type v = x'Hx +$fto'po(s)ds H > 0 and the system (2) has only one equilibrium point.