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Journal ArticleDOI

Impact of distributed gate resistance on the performance of MOS devices

Behzad Razavi, +2 more
- 01 Nov 1994 - 
- Vol. 41, Iss: 11, pp 750-754
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TLDR
In this article, the impact of gate resistance on cut-off frequency, maximum frequency of oscillation (f/sub max/), thermal noise, and time response of wide MOS devices with deep submicron channel lengths was analyzed.
Abstract
This paper describes the impact of gate resistance on cut-off frequency (f/sub T/), maximum frequency of oscillation (f/sub max/), thermal noise, and time response of wide MOS devices with deep submicron channel lengths. The value of f/sub T/ is proven to be independent of gate resistance even for distributed structures. An exact relation for f/sub max/ is derived and it is shown that, to predict f/sub max/, thermal noise, and time response, the distributed gate resistance can be divided by a factor of 3 and lumped into a single resistor in series with the gate terminal. >

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Citations
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Book

Design of Analog CMOS Integrated Circuits

Behzad Razavi
TL;DR: The analysis and design techniques of CMOS integrated circuits that practicing engineers need to master to succeed can be found in this article, where the authors describe the thought process behind each circuit topology, but also consider the rationale behind each modification.
Book

Fundamentals of Modern VLSI Devices

Yuan Taur, +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI

A 1.5-V, 1.5-GHz CMOS low noise amplifier

TL;DR: In this article, a 1.5 GHz low noise amplifier (LNA) intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6/spl mu/m CMOS process.
Proceedings ArticleDOI

A 1.5 V, 1.5 GHz CMOS low noise amplifier

TL;DR: In this paper, a 1.5 GHz low noise amplifier for a Global Positioning System (GPS) receiver has been implemented in a 0.6 /spl mu/m CMOS process.
Journal ArticleDOI

Noise modeling for RF CMOS circuit simulation

TL;DR: In this paper, a nonquasi-static channel segmentation model was proposed to predict both drain and gate current noise in 0.18-/spl mu/m CMOS technology.
References
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Book

Microwave Solid State Circuit Design

TL;DR: In this paper, Pramanick and Bhartia presented an approach for impedance transformation techniques in RF MEMS devices and circuit applications, which can be found in the Appendix A: Units and Symbols. Appendix B: Physical constants and other data.
Journal ArticleDOI

Microwave properties of Schottky-barrier field-effect transistors

TL;DR: In this paper, the microwave properties of the Schottky-barrier field effect transistor (MESFET) with a gate-length of one micrometer are investigated.
Journal ArticleDOI

On the stability of a certain class of nonlinear sampled-data systems

TL;DR: In this article, a sufficient condition for stability of a class of sampled-data feedback systems containing a memoryless, nonlinear gain element is derived from the frequency response of the linear plant.
Book

Theory of Linear Active Networks

Ernest S. Kuh, +1 more
TL;DR: Powdered acidophil fermented milk products that can be readily reconstituted are prepared by spray drying milk which has been fermented withacidophil bacteria to produce a powdered product and agglomerating the powdered product.
Journal ArticleDOI

On the Absolute Stability of Sampled-Data Control Systems

TL;DR: One wants to derive a sufficient condition for the existence of a Liapunov function of the type v = x'Hx +$fto'po(s)ds H > 0 and the system (2) has only one equilibrium point.