Proceedings ArticleDOI
Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs
Paula Ghedini Der Agopian,Joao Antonio Martino,Daisuke Kobayashi,Eddy Simoen,Cor Claeys +4 more
- pp 7-10
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TLDR
In this article, the effect of proton irradiation on basic and analog parameters of triple-gate SOI MOSFETs was investigated and a higher immunity to the back interface influence was obtained for post-irradiated pMOS devices and consequently a better analog performance was observed.Abstract:
In this work the proton irradiation influence on basic and analog parameters of triple-gate SOI MOSFETs is investigated. The studied devices are strained and unstrained p- and nMuGFETs. The type of stress considered in each case, was the stress that results in a better performance of p- (CESL) and n-devices (sSOI+CESL). Although the results showed the worse behavior for post-irradiated nMOS transistors, a higher immunity to the back interface influence was obtained for post-irradiated pMOS devices and consequently a better analog performance was observed. The unit gain frequency improved for p and nMOS post-irradiated devices.read more
Citations
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Journal ArticleDOI
Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors
Eddy Simoen,Marc Gaillardin,P. Paillet,Robert A. Reed,Ronald D. Schrimpf,Michael L. Alles,F. El-Mamouni,Daniel M. Fleetwood,Alessio Griffoni,Cor Claeys +9 more
TL;DR: In this article, the authors describe the current understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and FinFET CMOS technologies.
Journal ArticleDOI
Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO 2 /HfO 2 Gate Dielectrics
Mariia Gorchichko,Daniel M. Fleetwood,Ronald D. Schrimpf,Robert A. Reed,Dimitri Linten,Yan-Rong Cao,En Xia Zhang,Dawei Yan,Huiqi Gong,Simeng E. Zhao,Pan Wang,Rong Jiang,Chundong Liang +12 more
TL;DR: In this paper, the authors evaluated total ionizing-dose (TID) effects and low-frequency noise in 30-nm gate-length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm.
Journal ArticleDOI
Total ionizing dose effects in multiple-gate field-effect transistor
Marc Gaillardin,Claude Marcandella,M. Martinez,Melanie Raine,Philippe Paillet,Olivier Duhamel,Nicolas Richard +6 more
TL;DR: In this article, the impact of device architecture, geometry and scaling on the total ionizing dose (TID) response of multiple-gate transistors is reviewed in both bulk and silicon-on-insulator (SOI) complementary metaloxide-semiconductor (CMOS) technologies.
References
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Journal ArticleDOI
Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
Hyung-Kyu Lim,Jerry G. Fossum +1 more
TL;DR: In this article, the charge coupling between the front and back gates of thin-film silicon-on-insulator (SOI) MOSFETs is analyzed, and closed-form expressions for the threshold voltage under all possible steady-state conditions are derived.
Journal ArticleDOI
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
TL;DR: In this paper, a detailed theoretical model for the physics of strain effects in bulk semiconductors and surface Si, Ge, and III-V channel metal-oxide-semiconductor field effect transistors is presented.
Journal ArticleDOI
Impact strain engineering on gate stack quality and reliability
TL;DR: In this article, the impact of different global and local strain engineering techniques on the gate stack quality and its reliability, including hot carrier performance, negative bias temperature instabilities, time dependent dielectric breakdown and radiation hardness, is discussed and the influence of different strain engineering approaches illustrated.
Journal ArticleDOI
Modes of operation and radiation sensitivity of ultrathin SOI transistors
TL;DR: In this paper, the effects of radiation on threshold voltage, sub-threshold slope, and mobility in ultrathin, fully depleted silicon-on-insulator (SOI) transistors are discussed.
Journal ArticleDOI
Mechanical Stress Dependence of Radiation Effects in MOS Structures
TL;DR: In this article, the effects of mechanical stress on radiation damage in polycide-gate MOS capacitors have been investigated as a function of gate-oxide thickness and silicide-gate electrode material (TiSi2, MoSi2 and WSi2).