Improved properties of MIM capacitors using ALD Al2O3 by multi-temperature technique
27 Jul 2015-pp 1015-1018
TL;DR: In this paper, a multi-temperature dielectric stack in metal-insulator-metal capacitors is proposed, where the middle layer is deposited at a higher temperature than the top and bottom layers.
Abstract: A different strategy to form dielectric thin films using atomic layer deposition is proposed, where the dielectric stack consists of three layers in which the middle layer is deposited at a higher temperature than the top and bottom layer. This multi-temperature dielectric stack in metal-insulator-metal capacitor offers improved electrical properties compared to a dielectric film deposited at a single temperature. A multilayer 40 nm thick Al2O3 deposited with temperature and thickness sequence of 80 °C - 10 nm, 150 °C - 20 nm, and 80 °C - 10 nm offers reduced leakage current density by more than one order of magnitude compared to that for a 40 nm Al2O3 deposited at 150°C, and offers higher capacitance density compared to that for 40 nm Al2O3 deposited at 80 °C, and low values of voltage coefficients of capacitance. The changes in the capacitance density and leakage current are found to be strongly dependent on the various roughness values in the devices.
Citations
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TL;DR: In this paper, a chemical formulation is presented that enables the chemical solution deposition of aluminum hydroxide thin films, which transforms into aluminum oxide through subsequent annealing, which represents a faster and more economical alternative for aluminum oxide thin film deposition that can be used in metal insulator-metal (MIM) dielectric capacitor applications.
12 citations
TL;DR: In this article, a 40-nm AlO x-based resistive random access memory was fabricated with a new multi-temperature deposition (MTD) scheme, where a 40nm thick AlOx film was deposited with temperature-thickness sequence of 150°C (10nm)/80 −C (20 −nm)/150 −C(10 −nm), and the conduction mechanism has been explained as ohmic and space charge limited conduction at lower and higher voltages respectively.
8 citations
TL;DR: In this article, the effect of different dielectric constants (k ) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect that using low- k and high- k dielectrics materials.
Abstract: A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor’s performance is the design and the dielectric materials used. In this study, MIM capacitors are simulated using different dielectric materials and different number of dielectric layers from two layers up to seven layers. The effect of the different dielectric constants ( k ) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect of using low- k and high- k dielectric materials. The dielectric materials used in this study with high- k are Al 2 O 3 and HfO 2 , while the low- k dielectric materials are SiO 2 and Si 3 N 4 . The results demonstrate that the dielectric materials with high- k produce the highest capacitance. Results also show that metal-Al 2 O 3 interfaces increase the performance of the MIM capacitors. By increasing the number of dielectric layers to seven stacks, the capacitance and breakdown voltage reach its highest value at 0.39 nF and 240 V, respectively.
5 citations
References
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DOI•
20 Sep 2004
1,387 citations
"Improved properties of MIM capacito..." refers background in this paper
...Where C0 is the capacitance at zero bias and , are quadratic and linear VCC respectively [1]....
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...Various parameters such as capacitance density, leakage current density, and voltage linearity are some of the factors on which electrical performance of an MIM capacitor depends [1]....
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TL;DR: In this article, the effects of surface roughness on electrical properties of a thin insulating film capacitor with one smooth electrode plate and one rough electrode plate are investigated, and the electrode plate roughness is described in terms of self-affine fractal scaling through the roughness exponent, the root-mean square (rms) roughness amplitude w and the correlation length.
Abstract: Effects of surface roughness on electrical properties of a thin insulating film capacitor with one smooth electrode plate and one rough electrode plate are investigated. The electrode plate roughness is described in terms of self-affine fractal scaling through the roughness exponent \ensuremath{\alpha}, the root-mean square (rms) roughness amplitude w, and the correlation length \ensuremath{\xi}. The electric field, capacitance, and leakage current show similar qualitative changes with the roughness parameters: they all increase as w increases, and also increase as either \ensuremath{\xi} or \ensuremath{\alpha} decreases.
177 citations
"Improved properties of MIM capacito..." refers background in this paper
...This causes a larger true contact area and larger charge storage and hence a larger capacitance [20]....
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TL;DR: Atomic layer deposition of zirconium oxide from ZIRconium tetraiodide, water and hydrogen peroxide is described in this article, where the authors present a method to extract the atomic layer from the ZIRC.
98 citations
"Improved properties of MIM capacito..." refers background in this paper
...Deposition temperature of the dielectric material plays a very important role in overall quality of the film and affects its performance in a profound way [12-14]....
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28 Sep 2007
TL;DR: In this paper, two ALD processes, namely trimethylaluminium/water and titanium tetrachloride/water, were implemented in a microelectromechanical system (MEMS) line.
Abstract: Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers for biocompatible coating, highdielectric-constant layers, or low-temperature conformal insulating layers. Before an ALD process can be successfully implemented in MEMS processing, several practical issues have to be solved, starting from patterning the layers and characterizing their behaviour in various chemical and thermal environments. Stress issues may not be forgotten. We have recently implemented two ALD processes, namely the trimethylaluminium/water process to deposit Al2O3 and the titanium tetrachloride/water process to deposit TiO2 in our MEMS processing line and carried out the necessary characterization, details of which are reported here. For us, ALD has been a truly enabling technology in the processing of a three-dimensional micromechanical compass based on the Lorentz force, where Al2O3 acted as a pinhole-free electrical insulation grown at low temperature.
74 citations
"Improved properties of MIM capacito..." refers background in this paper
...Capacitance tends to increase with increasing roughness [18, 19]....
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TL;DR: In this paper, the effect of interface topography on metal/insulator/metal (MIM) capacitor electrical properties was analyzed by numerical simulations of the electric field established in a MIM structure with a 45nm thick Ta2O5 film.
Abstract: The authors report in this letter the effect of interface topography on metal/insulator/metal (MIM) capacitor electrical properties. This analysis was carried out by numerical simulations of the electric field established in a MIM structure with a 45nm thick Ta2O5 film. The metal/insulator interface profiles have been extracted from transmission electron microscopy micrographs of a fully integrated device. This in situ approach allows direct comparison between electrical properties and numerical simulations performed on the same device. Results show that the bottom electrode’s surface roughness induces a large electric field increase at the interface which could explain MIM capacitor’s asymmetrical electrical behavior.
64 citations
"Improved properties of MIM capacito..." refers background in this paper
...Roughness of the top and bottom interfaces cause rise in the average electric field in the insulator film, with higher rise on the rougher interface [16, 17]....
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