Improved properties of MIM capacitors using ALD Al2O3 by multi-temperature technique
27 Jul 2015-pp 1015-1018
TL;DR: In this paper, a multi-temperature dielectric stack in metal-insulator-metal capacitors is proposed, where the middle layer is deposited at a higher temperature than the top and bottom layers.
Abstract: A different strategy to form dielectric thin films using atomic layer deposition is proposed, where the dielectric stack consists of three layers in which the middle layer is deposited at a higher temperature than the top and bottom layer. This multi-temperature dielectric stack in metal-insulator-metal capacitor offers improved electrical properties compared to a dielectric film deposited at a single temperature. A multilayer 40 nm thick Al2O3 deposited with temperature and thickness sequence of 80 °C - 10 nm, 150 °C - 20 nm, and 80 °C - 10 nm offers reduced leakage current density by more than one order of magnitude compared to that for a 40 nm Al2O3 deposited at 150°C, and offers higher capacitance density compared to that for 40 nm Al2O3 deposited at 80 °C, and low values of voltage coefficients of capacitance. The changes in the capacitance density and leakage current are found to be strongly dependent on the various roughness values in the devices.
Citations
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TL;DR: In this paper, a chemical formulation is presented that enables the chemical solution deposition of aluminum hydroxide thin films, which transforms into aluminum oxide through subsequent annealing, which represents a faster and more economical alternative for aluminum oxide thin film deposition that can be used in metal insulator-metal (MIM) dielectric capacitor applications.
12 citations
TL;DR: In this article, a 40-nm AlO x-based resistive random access memory was fabricated with a new multi-temperature deposition (MTD) scheme, where a 40nm thick AlOx film was deposited with temperature-thickness sequence of 150°C (10nm)/80 −C (20 −nm)/150 −C(10 −nm), and the conduction mechanism has been explained as ohmic and space charge limited conduction at lower and higher voltages respectively.
8 citations
TL;DR: In this article, the effect of different dielectric constants (k ) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect that using low- k and high- k dielectrics materials.
Abstract: A Metal-Insulator-Metal (MIM) capacitor with high capacitance, high breakdown voltage, and low leakage current is aspired so that the device can be applied in many electronic applications. The most significant factors that affect the MIM capacitor’s performance is the design and the dielectric materials used. In this study, MIM capacitors are simulated using different dielectric materials and different number of dielectric layers from two layers up to seven layers. The effect of the different dielectric constants ( k ) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect of using low- k and high- k dielectric materials. The dielectric materials used in this study with high- k are Al 2 O 3 and HfO 2 , while the low- k dielectric materials are SiO 2 and Si 3 N 4 . The results demonstrate that the dielectric materials with high- k produce the highest capacitance. Results also show that metal-Al 2 O 3 interfaces increase the performance of the MIM capacitors. By increasing the number of dielectric layers to seven stacks, the capacitance and breakdown voltage reach its highest value at 0.39 nF and 240 V, respectively.
5 citations
References
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TL;DR: A two step mechanism involving the generation of a conduction path followed by a destructive thermal effect is proposed to explain breakdown mechanism of MIM capacitors using HfO2 and Al2O3–HfO 2 stacked layers.
59 citations
"Improved properties of MIM capacito..." refers background in this paper
...Various attempts have been made to improve one or more of these parameters; structural (include stacked [2, 3], sandwiched [4] and laminated architectures [5, 6]) and procedural (like doping [5, 7, 8], and plasma treatment [9-11])....
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TL;DR: In this article, the dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of dielectrics.
Abstract: The dielectric stacking effects of Al2O3 and HfO2 thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the dielectrics. The stacked dielectrics over three layers show the enhancement of dielectric permittivity and voltage linearity of quadratic voltage coefficient compared to one-layer dielectrics. Stacking over five layers attributes to improving leakage current density and breakdown voltage characteristics than three layers.
39 citations
10 Jun 2003
TL;DR: In this article, high-k MiM capacitors with voltage linearity as low as 25 ppm/V and 13 ppm/ V/sup 2/V/sup 3/ were presented.
Abstract: In this paper, we report high-k MiM capacitors including Ta/sub 2/O/sub 5/, TaO/sub x/N/sub y/, HfO/sub 2/, Al/sub 2/O/sub 3/ and Ta/sub 2/O/sub 5//Al/sub 2/O/sub 3/ stack layer integrated in 0.13 /spl mu/m 8-level Cu-metallization technology using Cu barrier as both top and bottom electrodes. Ta/sub 2/O/sub 5/ exhibits excellent voltage and temperature linearity of capacitance. Al/sub 2/O/sub 3/ shows low leakage, but poor voltage and temperature linearity. Voltage linearity could be significantly affected by high-k deposition temperature. We present high-k MiM capacitors with voltage linearity as low as 25 ppm/V and 13 ppm/V/sup 2/.
39 citations
"Improved properties of MIM capacito..." refers background in this paper
...Deposition temperature of the dielectric material plays a very important role in overall quality of the film and affects its performance in a profound way [12-14]....
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TL;DR: Using high/spl kappa/Al/sub 2/O/sub 3/doped Ta/sub O/sub 5/ dielectric, a record high MIM capacitance density of 17 fF/spl mu/m/sup 2/ at 100 kHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9/spl times/10/sup -7/ A/cm/sup2/
Abstract: Using high-/spl kappa/ Al/sub 2/O/sub 3/ doped Ta/sub 2/O/sub 5/ dielectric, we have obtained record high MIM capacitance density of 17 fF//spl mu/m/sup 2/ at 100 kHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9/spl times/10/sup -7/ A/cm/sup 2/. In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2/spl times/10/sup -12/ A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-/spl mu/m MOSFET. This very high capacitance density with good MIM capacitor characteristics can significantly reduce the chip size of RF ICs.
34 citations
TL;DR: A new hybrid approach consists to use the advantages of both systems namely the high geometric aspects of the electrodes of the ultracapacitor and the high dielectric strength of polymer materials used in dielectic capacitors to constitute the hybrid capacitor.
32 citations
"Improved properties of MIM capacito..." refers background in this paper
...Capacitance tends to increase with increasing roughness [18, 19]....
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