Journal ArticleDOI
In 1-x Ga x As y P 1-y /InP DH lasers fabricated on InP
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In this article, 1-x Ga x As y P 1-y /InP double heterostructure (DH) laser diodes with emission wavelengths of 1.25-1.35 µm at room temperature were fabricated onAbstract:
In 1-x Ga x As y P 1-y /InP double heterostructure (DH) laser diodes with emission wavelengths of 1.25-1.35\mu m at room temperature were fabricated onread more
Citations
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The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers
TL;DR: In this paper, the authors measured the intervalence band absorption spectra of In 0.53 Ga 0.47 As, InP, and GaAs and showed that the measured spectra are broader, have less temperature dependence, and have 2× less peak intensity than theoretical curves predicted by an elementary k\cdotp band model.
Journal ArticleDOI
The temperature dependence of the threshold current of GaInAsP/InP DH lasers
TL;DR: In this article, the authors considered the temperature dependence of the threshold current of GaInAsP/InP lasers in terms of linear gain, loss, and carder lifetime, taking into account electronic intraband relaxation effects.
Journal ArticleDOI
Low resistance ohmic contacts to n- and p-InP
TL;DR: In this article, the contact properties of various metal combinations, deposited by vacuum evaporation on InP, were studied and the specific contact resistances were analyzed using a four-point method which also accounts for the spreading resistance.
Journal ArticleDOI
Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers
TL;DR: InGaAsP/InP buried heterostructure lasers with a stripe width of 1-2 μm have been fabricated by two-step liquid phase epitaxy and preferential chemical etching as discussed by the authors.
References
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Journal ArticleDOI
Spectral losses of low-OH-content optical fibres
M. Horiguchi,H. Osanai +1 more
TL;DR: In this article, very low-OH-content optical fibres consisting of borosilicate-cladding phosphosilicate core have been produced by a chemical vapour deposition technique.
Journal ArticleDOI
Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Journal ArticleDOI
Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques
TL;DR: In this paper, four different methods of LPE growth are compared: supercooling, step cooling, equilibrium cooling, and two-phase-solution (2PSS) techniques, and the results show that the smoothest layers were obtained by the super cooling and step cooling techniques, the roughest by the 2PSS method.
Journal ArticleDOI
Bandgap and lattice constant of GaInAsP as a function of alloy composition
TL;DR: In this paper, the composition dependence of the room-temperature bandgap (Eg) and lattice constant (ao) in the pseudobinary GayIn1-yAs, GayIn 1-yP, GaAsxPl-x, and InAsxpl-x systems have been derived.
Journal ArticleDOI
Effect of dopants on transmission loss of low-OH-content optical fibres
TL;DR: In this paper, the effects of dopants in pure silica on the losses of optical fibres were investigated and the results showed that the effect of the dopants on the loss in the near-infrared region was negligible.