Industrial Technologies For III-Nitride-Based Electronics.
15 Sep 2011-Vol. 39, Iss: 1, pp 379-384
TL;DR: In this paper, a number of power amplifiers for L-, S-, C- and X-band are realized for various types of bulk acoustic resonators, stress-controlling technology of AlN/GaN layers having high depth uniformity on Si substrates is also developed.
Abstract: The industrial level technologies including molecular beam epitaxy and submicron planar processing are developed to realize novel electron devices based on III-nitride multilayer heterostructures. Wide conditions range available on growth equipment used as well as flexible heterostructure designs allows controlling of device oriented material properties. For microwave applications, thick AlN “templates” grown at extremely high (up to 1100°C) substrate temperature in conjunction with multilayer transition region design both provide low dislocation density in the order of 10 8 cm -2 . The strong carrier confinement in two-dimensional electron gas for collapse-free transistor operation is provided by placing GaN channel between AlGaN barriers of various Al content, keeping high sheet conductivity of 260-320 Ohm/square. Based on these heterostructures a number of power amplifiers for L-, S-, C- and X-band are realized. For various types of bulk acoustic resonators, stress-controlling technology of AlN/GaN layers having high depth uniformity on Si substrates is also developed.
References
More filters
01 Sep 2009
TL;DR: In this article, the first K to Ka band filters using thin film bulk acoustic resonators (FBARs) have been developed using an equivalent circuit based on a Butterworth-Van-Dyke (BVD) model.
Abstract: The first K to Ka band filters using thin film bulk acoustic resonators (FBARs) have been developed. The filters are ladder type filters configured with air-gap type FBARs and designed using an equivalent circuit based on a Butterworth-Van-Dyke (BVD) model. Center frequency, fractional bandwidth, minimum insertion loss and suppression in out-band were 23.8 GHz, 3.4%, −3.8 dB and −13 dB in the K band filter, and were 29.2 GHz, 3.4%, −3.8 dB and −11 dB in the Ka band filter, respectively. 24.7 GHz in resonant frequency, 285 in resonant Q, 291 in anti-resonant Q and 6.0% in effective electro-mechanical coupling coefficient k eff 2 were obtained in the K band FBAR. Additionally, it was derived and verified experimentally that the loss is proportional to the product of the resonant frequency and the capacitance ratio in the FBAR. This relation allowed the limitation of the FBAR filter to be discussed for higher frequencies.
27 citations
01 Sep 2009
TL;DR: In this article, a millimeter-wave film bulk acoustic resonator (FBAR) with very thin aluminium nitride (AlN) film fabricated using metal organic chemical vapor deposition (MOCVD) method was discussed.
Abstract: We discuss millimeter-wave film bulk acoustic resonator (FBAR) with very thin aluminium nitride (AlN) film fabricated using metal organic chemical vapor deposition (MOCVD) method. In previous works, we have successfully grown c-axis oriented AlN film using MOCVD method on Ru/Ta/SiO 2 /Si substrate. In this paper, we grew excellent orientation films of AlN and Ru electrodes in MOCVD, although their film thickness were very thin. Experimental results show that full width at half maximum (FWHM) is 1.3° at AlN thickness of 30 nm. In calculating analysis, when both top and bottom electrode thicknesses were 20 nm and AlN thickness was 30 nm, we obtained that resonant frequency was higher than 50 GHz. Therefore, FBAR is possible to apply to millimeter-wave bands devices, also contribute to small-size, low power consumption and low cost for millimeter-wave terminals.
8 citations