Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs
Citations
6 citations
Cites result from "Influence of 60-MeV Proton-Irradiat..."
...Similar as for FinFETs [28], the radiation degrades the DIBL in UTBB devices with longer channel lengths....
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3 citations
Cites background from "Influence of 60-MeV Proton-Irradiat..."
...Depending on their energy the radiation particles travel deep through the devices, thereby changing the devices characteristics due the generation of charges in the silicon oxide or interface traps [5-6]....
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3 citations
2 citations
2 citations
Cites background or result from "Influence of 60-MeV Proton-Irradiat..."
...Although previous works have already analyzed the protonirradiation and its influence on analog figures-of-merit for the same devices [5, 15], this work proposes the analysis of the influence of the proton-irradiation on the voltage gain of an operational transconductance amplifier (OTA), where the OTA is designed using detailed experimental data extracted...
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...Regarding the proton irradiation, it is noticeable that the SS of the devices is affected, as already suggested in previous works [5, 17]....
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...For all studied devices, the radiation influence on gate oxide can be disregarded due to its small thickness [5]....
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...Other studies that used the same irradiated devices can be found in [5, 15, 17]....
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References
1,627 citations
"Influence of 60-MeV Proton-Irradiat..." refers background in this paper
...S ILICON-on-Insulator (SOI) CMOS technology has demonstrated a significant improvement over bulk counterparts for operating in radiation-harsh environments due to the buried oxide that isolates the transistor active area from the substrate [1]–[3]....
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662 citations
"Influence of 60-MeV Proton-Irradiat..." refers background in this paper
...The charges in the buried oxide affect the front gate characteristics due to the coupling between the front and back interfaces [4]....
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467 citations
"Influence of 60-MeV Proton-Irradiat..." refers methods in this paper
...For pMOS devices, a compressive stress is applied since this type of stress results in a hole mobility increase by modifying the silicon valence band structure [13]....
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375 citations
"Influence of 60-MeV Proton-Irradiat..." refers background in this paper
...S ILICON-on-Insulator (SOI) CMOS technology has demonstrated a significant improvement over bulk counterparts for operating in radiation-harsh environments due to the buried oxide that isolates the transistor active area from the substrate [1]–[3]....
[...]
82 citations
"Influence of 60-MeV Proton-Irradiat..." refers background in this paper
...Previous work [14] already reported the influence of the back oxide charges on the SS behavior....
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