Journal ArticleDOI
Influence of alloy composition on the diffusivity-mobility ratio in n-channel inversion layers on ternary semiconductors
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An expression for the diffusivity-mobility ratio of the carriers in n-channel inversion layers on semiconductors like the ternary compounds which have strongly non-parabolic energy bands was derived in this article.Abstract:
An expression is derived for the diffusivity-mobility ratio of the carriers in n-channel inversion layers on semiconductors like the ternary compounds which have strongly non-parabolic energy bands. The dependence of the ratio on alloy composition is also studied under the weak-field limit taking n-channel Hg1−xCdx.Te as an example.read more
Citations
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Journal ArticleDOI
Simple theory of the interband optical absorption in an external electric field for optoelectronic materials
TL;DR: In this paper, the interband optical-absorption coefficient (OAC) of optoelectronic materials within the framework of the three-band model of Kane was analyzed. But the authors did not consider the Wannier-Stark levels.
Journal ArticleDOI
Theoretical Analysis of Oscillatory Heat Capacity in n‐Channel Inversion Layers on Ternary Semiconductors
M. Mondal,Kamakhya Prasad Ghatak +1 more
Book ChapterDOI
Few Related Applications
TL;DR: This chapter contains twenty eight applications of the DRs as presented for various HD materials and their quantized counterparts as investigated in this book.
Book ChapterDOI
The Carrier Statistics, Terahertz Frequency, Extremely Degenerate Opto-electronic Materials and All That
TL;DR: In this article, the carrier statistics in quantized extremely degenerate III-V, ternary, quaternary and tetragonal compounds were studied and the influence of photo-excitation and electric field on the Fermi energy was investigated.
References
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Journal ArticleDOI
Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
Frank Stern,W. E. Howard +1 more
TL;DR: In this article, the authors generalized the energy-level calculation to include arbitrary orientations of the constant energy ellipsoids in the bulk, the surface or interface, and an external magnetic field.
Journal Article
Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
Journal ArticleDOI
Energy Gap in Hg1−xCdxTe by Optical Absorption
TL;DR: In this paper, the authors measured the energy gap at the fundamental absorption edge of HgTe over the composition range 0.23 to 0.61 and at temperatures from 300° to 10°K.
Journal ArticleDOI
Surface cyclotron resonance in InSb
TL;DR: In this paper, the cyclotron resonance of electrons in an inversion layer on the surface of p-type InSb was studied and a number of distinct resonance peaks were found to appear.