Influence of an arbitrarily oriented quantizing magnetic field on the field emission from AII3BV2 compounds
TL;DR: In this article, the influence of an arbitrarily oriented quantizing magnetic field on the field emission from A II 3 B V 2 compounds on the basis of a newly derived magneto-energy spectrum, based on k.p formalism, considering the anisotropies of the various band parameters.
About: This article is published in Journal of Magnetism and Magnetic Materials.The article was published on 1988-09-01. It has received 14 citations till now. The article focuses on the topics: Magnetic energy & Optical field.
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TL;DR: In this article, the authors studied the energy spectrum of conduction electrons and the corresponding density-of- states function of III-V, ternary and quaternary semiconductors, whose unperturbed energy band structures are defined by the three band model of Kane, in the presence of an external electric field.
Abstract: We study theoretically the energy spectrum of conduction electrons and the corresponding density-of- states function (DOS) of III–V, ternary and quaternary semiconductors, whose unperturbed energy band structures are defined by the three band model of Kane, in the presence of an external electric field. It has been observed that the unperturbed isotropic energy spectrum becomes modified under external electric field and changes into an anisotropic dispersion relation with the energy-dependent mass anisotropy. Besides, the band gap of semiconductors increases with the electric field; a phenomenon never explained earlier either theoretically (Franz–Keldysh effect) or experimentally. In addition, from the study of the DOS, it indicates that the carriers disappear from the edge of the conduction band after certain values of the applied electric field. It has been found taking n-InSb, n-InAs, Hg1−xCdxTe and In 1−xGaxAsyP1−y lattice matched to InP as examples of Kane-type semiconductors for numerical computation that the increase of band gap and disappearance of carriers from the edges of the conduction band do happen for all types of materials in the presence of external electric field. The well-known energy spectrum and the corresponding DOS for wide-gap semiconductors in the absence of electric field have been obtained under certain limiting conditions from the theoretical expressions. This compatibility is an indirect mathematical test of our generalized analysis.
11 citations
TL;DR: In this article, a simplified theoretical formulation of the Fowler-Nordheim field emission (FNFE) under magnetic quantization and also in quantum wires of optoelectronic materials on the basis of a newly formulated electron dispersion law in the presence of strong electric field within the framework of kp formalism was presented.
3 citations
01 Jan 2012
TL;DR: The Fowler-Nordheim field emission (FNFE) is a well-known quantum-mechanical phenomenon that involves tunneling of electrons through a surface barrier due to the application of an intense external electric field as mentioned in this paper.
Abstract: The Fowler–Nordheim field emission (FNFE) is a well-known quantum-mechanical phenomenon that involves tunneling of electrons through a surface barrier due to the application of an intense external electric field. Normally, at field strengths of the order of 108 V∕m (below the electrical breakdown), the potential barriers at the surfaces of metals and semiconductors usually become very thin and result in field emission of electrons due to the tunnel effect [1, 2].
2 citations
01 Jan 2016
TL;DR: This chapter contains twenty eight applications of the DRs as presented for various HD materials and their quantized counterparts as investigated in this book.
Abstract: This chapter contains twenty eight applications of the DRs as presented for various HD materials and their quantized counterparts as investigated in this book. The Sect. 20.3 contains 1 multi dimensional open research problem, which form the integral part of this chapter.
1 citations
01 Jan 2021
TL;DR: In this paper, the influence of terahertz frequency on the elastic constants in extremely degenerate (ED) 2D systems taking quantized films (QFs) and accumulation layers (ALs) of nonlinear optical, tetragonal, ternary, quaternary, III-V, II-VI, IV-VI and strained compounds, respectively, was investigated.
Abstract: We investigate the influence of terahertz frequency on the elastic constants in extremely degenerate (ED) 2D systems taking quantized films (QFs) and accumulation layers (ALs) of nonlinear optical, tetragonal, ternary, quaternary, III–V, II–VI, IV–VI and strained compounds, respectively. It has been found taking ED QFs and ALs of specific materials of the important 2D electronic compounds as examples that the elastic constants (C1 and C2) change with nano-size of the said QFs and the two-dimensional carrier statistics per unit area in different oscillatory ways. The influence of electric field for both the limits in inversion layers of non-parabolic materials has also been studied. Besides, C1 and C2 are in nice agreement with our suggestive relationships for determining them experimentally.
References
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TL;DR: Detailed calculations of the shift of exciton peaks are presented including (i) exact solutions for single particles in infinite wells, (ii) tunneling resonance calculations for finite wells, and (iii) variational calculations ofexciton binding energy in a field.
Abstract: We report experiments and theory on the effects of electric fields on the optical absorption near the band edge in GaAs/AlGaAs quantum-well structures. We find distinct physical effects for fields parallel and perpendicular to the quantum-well layers. In both cases, we observe large changes in the absorption near the exciton peaks. In the parallel-field case, the excitons broaden with field, disappearing at fields \ensuremath{\sim}${10}^{4}$ V/cm; this behavior is in qualitative agreement with previous theory and in order-of-magnitude agreement with direct theoretical calculations of field ionization rates reported in this paper. This behavior is also qualitatively similar to that seen with three-dimensional semiconductors. For the perpendicular-field case, we see shifts of the exciton peaks to lower energies by up to 2.5 times the zero-field binding energy with the excitons remaining resolved at up to \ensuremath{\sim}${10}^{5}$ V/cm: This behavior is qualitatively different from that of bulk semiconductors and is explained through a mechanism previously briefly described by us [D. A. B. Miller et al., Phys. Rev. Lett. 53, 2173 (1984)] called the quantum-confined Stark effect. In this mechanism the quantum confinement of carriers inhibits the exciton field ionization. To support this mechanism we present detailed calculations of the shift of exciton peaks including (i) exact solutions for single particles in infinite wells, (ii) tunneling resonance calculations for finite wells, and (iii) variational calculations of exciton binding energy in a field. We also calculate the tunneling lifetimes of particles in the wells to check the inhibition of field ionization. The calculations are performed using both the 85:15 split of band-gap discontinuity between conduction and valence bands and the recently proposed 57:43 split. Although the detailed calculations differ in the two cases, the overall shift of the exciton peaks is not very sensitive to split ratio. We find excellent agreement with experiment with no fitted parameters.
1,731 citations
IBM1
TL;DR: In this article, the calculated dependence of the gain coefficient on photon energy and excitation level in GaAs is given for 297 and 77 K. The qualitative behavior of the results is in agreement with experiment.
Abstract: The calculated dependence of the gain coefficient on photon energy and excitation level in GaAs is given for 297 and 77 K. The curves of gain versus excitation rate generally have downward curvature for photon energies near the gain peak, while the envelope of these curves generally has upward curvature except at high excitation rates. Results are also given for the calculated dependence of the radiative recombination rate coefficient and of the photon energy at the gain peak on excitation rate. The qualitative behavior of the results is in agreement with experiment.
283 citations
TL;DR: In this paper, the linear and non-linear properties of AgGaS2 have been studied and the nonlinear susceptibility (d14 = 1.3 × 10-7 esu) was determined from a phase-matched SHG experiment with a CO2 laser.
276 citations
TL;DR: In this paper, a quasicubic model was proposed to predict the signs and magnitudes of the valence-band splittings observed in chalcopyrite crystal.
Abstract: A simple theoretical model is proposed to explain the recently observed valence-band structure of CdSn${\mathrm{P}}_{2}$ and similar chalcopyrite crystals. The valence bands of a chalcopyrite crystal are regarded as equivalent to those of a strained version of its binary analog. This model predicts the signs and magnitudes of the valence-band splittings observed in CdSn${\mathrm{P}}_{2}$ and ZnSi${\mathrm{As}}_{2}$. We show further that the quasicubic model explains quantitatively the unusual polarization dependences previously reported.
129 citations
TL;DR: A modulation and detection scheme for applying derivative techniques to the investigation of stripe geometry (Al, Ga)As double-heterostructure lasers is described, found to sensitively reveal light-current nonlinearities that are believed caused by filaments and other spatial inhomogeneities and instabilities.
Abstract: A modulation and detection scheme for applying derivative techniques to the investigation of stripe geometry (Al, Ga)As double-heterostructure lasers is described. Modulating at constant modulation index allows the quantities I(dV/dI) and I2(d2V /dI2) to be directly obtained in the same apparatus at the first and second harmonic of the modulation frequency, respectively. Particularly strong indications of laser action and other optical interactions in the laser are contained in the second harmonic voltage response. The same apparatus may be used to obtain derivatives of the light-current relation. These are found to sensitively reveal light-current nonlinearities that are believed caused by filaments and other spatial inhomogeneities and instabilities.
51 citations