Journal ArticleDOI
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs
Giovanni Verzellesi,L. Morassi,Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni,Gianmauro Pozzovivo,S. Lavanga,Thomas Detzel,Oliver Häberlen,Gilberto Curatola +9 more
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TLDR
In this article, the drain-source capacitance of double-field-plate power AlGaN/GaN HEMTs with C-doped buffers is modeled as a carbon doping mechanism.Abstract:
Pulse behavior of insulated-gate double-field-plate power AlGaN/GaN HEMTs with C-doped buffers showing small current-collapse effects and dynamic RDS,on increase can accurately be reproduced by numerical device simulations that assume the CN-CGa autocompensation model as carbon doping mechanism. Current-collapse effects much larger than experimentally observed are instead predicted by simulations if C doping is accounted by dominant acceptor states. This suggests that buffer growth conditions favoring CN-CGa autocompensation can allow for the fabrication of power AlGaN/GaN HEMTs with reduced current-collapse effects. The drain-source capacitance of these devices is found to be a sensitive function of the C doping model, suggesting that its monitoring can be adopted as a fast technique to assess buffer compensation properties.read more
Citations
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Journal ArticleDOI
“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs
Michael J. Uren,Serge Karboyan,Indranil Chatterjee,Alexander Pooth,Peter Moens,Abhishek Banerjee,Martin Kuball +6 more
TL;DR: In this article, the authors identify the causes of dynamic dispersion using substrate bias ramps to isolate the leakage paths and trapping locations in the epitaxy and simulation to identify their impact on the device characteristics.
Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
Journal ArticleDOI
Doping of III-nitride materials
TL;DR: In this paper, the authors report the current state of research regarding the doping of III-nitride materials and their alloys and report that doping of AlGaN and InGaN alloys with low-gallium-content has particular challenges, especially for p -materials and these issues are described.
Journal ArticleDOI
Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs
TL;DR: In this article, the effect of carbon-doping in GaN buffer on the performance of AlGaN/GaN HEMTs is discussed. But the authors focus on the degradation of the breakdown voltage, leakage current, sheet charge density, and dynamic ONresistance.
Journal ArticleDOI
A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
TL;DR: In this paper, the impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted for, and a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Carbon impurities and the yellow luminescence in GaN
TL;DR: In this paper, the effects of carbon on the electrical and optical properties of GaN were investigated using hybrid functional calculations, and it was shown that carbon substituting for N (CN) has an ionization energy of 0.90 eV.
Journal ArticleDOI
Trapping effects in GaN and SiC microwave FETs
TL;DR: This paper reviews the various trapping phenomena observed in SiC- and GaN-based FETs that contribute to compromised power performance and the measurement techniques utilized to identify these traps.
Journal ArticleDOI
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
Davide Bisi,Matteo Meneghini,Carlo De Santi,Alessandro Chini,Michael Dammann,Peter Brückner,Michael Mikulla,Gaudenzio Meneghesso,Enrico Zanoni +8 more
TL;DR: In this paper, the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation.
Journal ArticleDOI
Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
TL;DR: In this paper, the bulk trap-induced component of current collapse (CC) in GaN/AlGaN heterojunction field effect transistors is studied in drift diffusion simulations, distinguishing between acceptor traps situated in the top and bottom half of the bandgap, with Fe and C used as specific examples.