Influence of Defects on Solar Cell Characteristics

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Influence of Defects on Solar Cell Characteristics

Journal Article•DOI•

Influence of Defects on Solar Cell Characteristics

Otwin Breitenstein¹, J. Bauer¹, Pietro P. Altermatt², K. Ramspeck•Institutions (2)

Max Planck Society¹, Leibniz University of Hanover²

01 Oct 2009-Solid State Phenomena (Trans Tech Publications)-pp 1-10

TL;DR: In this article, the authors reviewed the present knowledge of the origin of non-ideal I-V characteristics of silicon solar cells and introduced new results on recombination involving coupled defect levels.

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Abstract: The current-voltage (I-V) characteristics of most industrial silicon solar cells deviate rather strongly from the exponential behavior expected from textbook knowledge. Thus, the recombination current may be orders of magnitude larger than expected for the given material quality and often shows an ideality factor larger than 2 in a wide bias-range, which cannot be explained by classical theory either. Sometimes, the cells contain ohmic shunts although the cell’s edges have been perfectly insolated. Even in the absence of such shunts, the characteristics are linear or super-linear under reverse bias, while a saturation would be classically expected. Especially in multicrystalline cells the breakdown does not tend to occur at -50 V reverse bias, as expected, but already at about -15 V or even below. These deviations are typically caused by extended defects in the cells. This paper reviews the present knowledge of the origin of such non-ideal I-V characteristics of silicon solar cells and introduces new results on recombination involving coupled defect levels.

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Journal Article•DOI•

Thin-layer black phosphorus/GaAs heterojunction p-n diodes

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Pascal Gehring, Roberto Urcuyo, Dinh Loc Duong, Marko Burghard, Klaus Kern - Show less +1 more

11 Jun 2015-Applied Physics Letters

TL;DR: In this article, the p-n heterojunction diodes with thin black phosphorus layers are interfaced with an underlying, highly n-doped GaAs substrate, and the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorus sheet with a thickness on the order of 10nm.

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Abstract: Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorus emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorus layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorus sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorus surface.

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58 citations

Journal Article•DOI•

Modelling and experimental investigations of microcracks in crystalline silicon photovoltaics: A review

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Lamprini Papargyri¹, Marios Theristis¹, Bernhard Kubicek², T. Krametz², Christoph Mayr², Panos Papanastasiou¹, George E. Georghiou¹ - Show less +3 more•Institutions (2)

University of Cyprus¹, Austrian Institute of Technology²

01 Jan 2020-Renewable Energy

TL;DR: In this article, the authors present the origins and factors that affect the cell cracks and the experimental and numerical studies related to PV cracks on the scale of wafer, cell and PV module are analyzed in detail.

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50 citations

Journal Article•DOI•

Low light illumination study on commercially available homojunction photovoltaic cells

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Johnny Russo¹, William B. Ray², William B. Ray¹, Marc Litz¹•Institutions (2)

United States Army Research Laboratory¹, Oak Ridge Associated Universities²

01 Apr 2017-Applied Energy

TL;DR: In this article, the authors measured single-junction solar cells' parameters under three different light sources (indoor light and narrow spectrum LED sources) with light intensities ranging from 0.5 to 100μW opt /cm 2.

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49 citations

Journal Article•DOI•

Unraveling the Crystallization Kinetics of 2D Perovskites with Sandwich-Type Structure for High-Performance Photovoltaics.

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Jingnan Song¹, Guanqing Zhou¹, Wei Chen², Quanzeng Zhang¹, Jazib Ali¹, Qin Hu³, Qin Hu⁴, Jing Wang¹, Cheng Wang⁴, Wei Feng, Aleksandra B. Djurišić², Haiming Zhu⁵, Yongming Zhang¹, Thomas P. Russell⁴, Thomas P. Russell³, Feng Liu¹ - Show less +12 more•Institutions (5)

Shanghai Jiao Tong University¹, University of Hong Kong², University of Massachusetts Amherst³, Lawrence Berkeley National Laboratory⁴, Zhejiang University⁵

01 Sep 2020-Advanced Materials

TL;DR: A systematical static and dynamic structure investigation is carried out to show the details of 2D morphology evolution, where the synergy between an alkali metal cation and a polar solvent leads to high-quality 2D perovskite films with sandwich-type structures and vertical phase segregation.

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Abstract: 2D perovskite solar cells with high stability and high efficiency have attracted significant attention. A systematical static and dynamic structure investigation is carried out to show the details of 2D morphology evolution. A dual additive approach is used, where the synergy between an alkali metal cation and a polar solvent leads to high-quality 2D perovskite films with sandwich-type structures and vertical phase segregation. Such novel structure can induce high-quality 2D slab growth and reduce internal and surface defects, resulting in a high device efficiency of 16.48% with enhanced continuous illumination stability and improved moisture (55-60%) and thermal (85 °C) tolerances. Transient absorption spectra reveal the carrier migration from low n to high n species with different kinetics. An [PbI6 ]4- octagon coalescence transformation mechanism coupled with metal and organic cations wrapped is proposed. By solvent vapor annealing, a recrystallization and reorientation of the 2D perovskite slabs occurs to form an ideal structure with improved device performance and stability.

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48 citations

Journal Article•DOI•

Characterization of a Ga-Assisted GaAs Nanowire Array Solar Cell on Si Substrate

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J P Boulanger¹, A. C. E. Chia¹, B. Wood¹, Sadegh Yazdi², Takeshi Kasama², Martin Aagesen, Ray R. LaPierre¹ - Show less +3 more•Institutions (2)

McMaster University¹, Technical University of Denmark²

16 Mar 2016-IEEE Journal of Photovoltaics

TL;DR: In this article, a single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1/1) substrates was presented, where a Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation.

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Abstract: A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet-dependent properties to minimize passivation layer removal for electrical contacting is demonstrated. Thorough electrical characterization and analysis of the cell is reported. The electrostatic potential distribution across the radial p-i-n junction GaAs NW is investigated by off-axis electron holography.

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46 citations

Cites background from "Influence of Defects on Solar Cell ..."

...In-depth analysis of nonideal diode behavior has revealed that extended crystal defects are largely responsible for nonideal diode behavior in thin-film PV cells [41]....
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References

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Book•

Metal-insulator transitions

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Nevill Mott

01 Jan 1974

TL;DR: In this article, a discussion is given of some aspects of the metal insulator transition and the status of the "minimum metallic conductivity" is discussed, and the concept is valid for liquids and in some, but not all, solid systems.

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Abstract: A discussion is given of some aspects of the metal insulator transition. Particular attention is paid to the status of the “minimum metallic conductivity”. The concept is valid for liquids, and in some, but not all, solid systems.

...read moreread less

2,109 citations

Journal Article•DOI•

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

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Chih-Tang Sah, Robert N. Noyce, William Shockley

01 Sep 1957

TL;DR: In this article, the authors show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics.

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Abstract: For certain p-n junctions, it has been observed that the measured current-voltage characteristics deviate from the ideal case of the diffusion model. It is the purpose of this paper to show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics. This phenomenon dominates in semiconductors with large energy gap, low lifetimes, and low resistivity. This model not only accounts for the nonsaturable reverse current, but also predicts an apparent exp (qV/nkT) dependence of the forward current in a p-n junction. The relative importance of the diffusion current outside the space charge layer and the recombination current inside the space charge layer also explains the increase of the emitter efficiency of silicon transistors with emitter current. A correlation of the theory with experiment indicates that the energy level of the centers is a few kT from the intrinsic Fermi level.

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1,934 citations

"Influence of Defects on Solar Cell ..." refers background or methods in this paper

...It will be shown below that the characteristics of real solar cells behave very differently to the predictions of [2] because recombination in the depletion region contributes significantly to the cell’s total external current....
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...This large ideality factor cannot be explained with classical diode theory, and also the J02 is about 3 orders of magnitude larger than expected by [2]....
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...The classical theory of p-n junction diodes was established by Shockley [1] and was later extended by recombination in the p-n junction depletion region by Sah, Noyce, and Shockley [2]....
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...According to [2] and also to recent, more realistic numerical simulations [3], J02 should be in the order of 10 A/cm(2) for relatively poor material with a excess carrier lifetime of  = 10 μs, and the ideality factor should be maximally n = 2....
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Book•

Solar Cells: Operating Principles, Technology, and System Applications

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Martin A. Green

01 Oct 1981

TL;DR: In this paper, the solar source of light energy is described and quantified, along with a review of semiconductor properties and the generation, recombination, and the basic equations of photovoltaic device physics.

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Abstract: Solar cell theory, materials, fabrication, design, modules, and systems are discussed. The solar source of light energy is described and quantified, along with a review of semiconductor properties and the generation, recombination, and the basic equations of photovoltaic device physics. Particular attention is given to p-n junction diodes, including efficiency limits, losses, and measurements. Si solar cell technology is described for the production of solar-quality crystals and wafers, and design, improvements, and device structures are examined. Consideration is given to alternate semiconductor materials and applications in concentrating systems, storage, and the design and construction of standalone systems and systems for residential and centralized power generation. Bibtex entry for this abstract Preferred format for this abstract

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1,773 citations

"Influence of Defects on Solar Cell ..." refers methods in this paper

...It is common practice to include also these entities in a one- or two-diode model via an equivalent circuit [5]:...
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...a one-diode model, for the approximation of the I-V characteristics [5]....
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Journal Article•DOI•

On metal-insulator transitions

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Nevill Mott

01 Sep 1990-Journal of Solid State Chemistry

842 citations

Book•

Fundamentals of Solid State Electronics

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Chin-Tang Sah

01 Oct 1991

TL;DR: In this article, a homogeneous semiconductor at equilibrium drift, diffusion, generation, recombination, trapping and tunneling metaloxide-semiconductor capacitor P/N and other junction diodes metal-oxide semiconductor and other field effect transistors bipolar junction transistor and other bipolar transistor devices.

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Abstract: Electrons, bonds, bands and holes homogeneous semiconductor at equilibrium drift, diffusion, generation, recombination, trapping and tunneling metal-oxide-semiconductor capacitor P/N and other junction diodes metal-oxide-semiconductor and other field-effect transistors bipolar junction transistor and other bipolar transistor devices.

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286 citations

"Influence of Defects on Solar Cell ..." refers background in this paper

...Also modern textbooks such as Sah [4] describe the current-voltage (I-V) characteristic of solar cells on these theoretical grounds, which predicts that the reverse current-density saturates for a reverse bias below -100 mV to a constant value of -(J01 + J02)....
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...The classical theory of p-n junction diodes was established by Shockley [1] and was later extended by recombination in the p-n junction depletion region by Sah, Noyce, and Shockley [2]....
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...Also, the breakdown behavior of real (especially of MC) solar cells under reverse bias deviates significantly from the predictions in [4]....
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...According to established theory, solar cells with a base doping concentration of 10(16) cm should break down by avalanche at a reverse bias above -50 V [4]....
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...Advanced theory predicts avalanche breakdown above a certain reverse bias, which is below -50 V for typical solar cells having a base doping concentration of 10(16) cm [4]....
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