Influence of Defects on Solar Cell Characteristics

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Influence of Defects on Solar Cell Characteristics

Journal Article•DOI•

Influence of Defects on Solar Cell Characteristics

Otwin Breitenstein¹, J. Bauer¹, Pietro P. Altermatt², K. Ramspeck•Institutions (2)

Max Planck Society¹, Leibniz University of Hanover²

01 Oct 2009-Solid State Phenomena (Trans Tech Publications)-pp 1-10

TL;DR: In this article, the authors reviewed the present knowledge of the origin of non-ideal I-V characteristics of silicon solar cells and introduced new results on recombination involving coupled defect levels.

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Abstract: The current-voltage (I-V) characteristics of most industrial silicon solar cells deviate rather strongly from the exponential behavior expected from textbook knowledge. Thus, the recombination current may be orders of magnitude larger than expected for the given material quality and often shows an ideality factor larger than 2 in a wide bias-range, which cannot be explained by classical theory either. Sometimes, the cells contain ohmic shunts although the cell’s edges have been perfectly insolated. Even in the absence of such shunts, the characteristics are linear or super-linear under reverse bias, while a saturation would be classically expected. Especially in multicrystalline cells the breakdown does not tend to occur at -50 V reverse bias, as expected, but already at about -15 V or even below. These deviations are typically caused by extended defects in the cells. This paper reviews the present knowledge of the origin of such non-ideal I-V characteristics of silicon solar cells and introduces new results on recombination involving coupled defect levels.

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Journal Article•DOI•

The influence of sodium ions decorated micro-cracks on the evolution of potential induced degradation in p-type crystalline silicon solar cells

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Nguyen Chung Dong¹, Mohammad Aminul Islam¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹•Institutions (1)

Nara Institute of Science and Technology¹

01 Nov 2018-Solar Energy

TL;DR: In this paper, the influence and mechanism of Na ion decorated micro-cracks on the evolution of potential induced degradation (PID) in p-type crystalline Si solar cells is investigated.

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25 citations

Journal Article•DOI•

Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells

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Takashi Sameshima, Naoto Miyazaki, Yuki Tsuchiya, Hiroki Hashiguchi, Tomihisa Tachibana, Takuto Kojima¹, Yoshio Ohshita¹, Koji Arafune², Atsushi Ogura - Show less +5 more•Institutions (2)

Toyota Technological Institute¹, University of Hyogo²

12 Mar 2012-Applied Physics Express

TL;DR: In this article, the electron-beam-induced current (EBIC) contrast at small-angle grain boundaries (SA-GBs) in multicrystalline silicon was evaluated.

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Abstract: Recombination properties at small-angle grain boundaries (SA-GBs) in multicrystalline silicon were evaluated. After Fe contamination, the electron-beam-induced current (EBIC) contrast at most SA-GBs became stronger, especially at >1.5°. After Al gettering, EBIC contrast of most 1.5° SA-GBs showed comparable contrast before gettering. In addition, there were SA-GBs which have different recombination properties even with the same misorientation angle. Between these SA-GBs, there were differences in the rotation axis, boundary direction, and existence of defects. The associativity of metals might be affected by the existence of defects caused by these differences.

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24 citations

Journal Article•DOI•

Polymer interface engineering enabling high-performance perovskite solar cells with improved fill factors of over 82%

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Quanzeng Zhang¹, Shaobing Xiong², Jazib Ali¹, Kun Qian¹, Yu Li¹, Wei Feng, Hailin Hu³, Jingnan Song¹, Feng Liu¹ - Show less +5 more•Institutions (3)

Shanghai Jiao Tong University¹, East China Normal University², National Autonomous University of Mexico³

30 Apr 2020-Journal of Materials Chemistry C

TL;DR: In this article, the role of P4VP polymer in perovskite solar cells was investigated and it was shown that defect-passivation can reduce the defects at the surfaces and grain boundaries by coordinating with undercoordinated lead sites.

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Abstract: The solution-processed perovskite films inevitably induce defects, adversely affecting the device performance and environmental stability. Motivated by the small molecular passivation agents, a systematic work is carried out to reveal the role of P4VP polymer in perovskite solar cells. The introduction of P4VP polymer can reduce the defects at the surfaces and grain boundaries by coordinating with undercoordinated lead sites. The substantially reduced defect density leads to reduced non-radiative recombination, and extended electron diffusion length. Furthermore, a good match of energy levels at the perovskite/PCBM interface is achieved, which favors efficient electron extraction and suppresses the hole transfer. As a result, the power conversion efficiency increases from 17.46% to 20.02% after defect-passivation and improved energy level alignment with a significantly enhanced fill factor of 82.61% and improved open circuit voltage of 1.09. In addition, the non-encapsulated devices exhibit enhanced moisture stability (60 ± 5% humidity) and thermal stability (85 °C) after P4VP incorporation.

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24 citations

Journal Article•DOI•

Production and photovoltaic characterisation of n-Si/p-CZTS heterojunction solar cells based on a CZTS ultrathin active layers

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Serap Yiğit Gezgin, Amina Houimi, Hamdi Şükür Kiliç

01 Dec 2019-Optik

TL;DR: In this article, the photovoltaic (PV) characteristics of ultrathin CZTS film solar cells have been discussed in detail in the present article and, as a result, the ideal ultra-thin CZts film solar cell structure having the highest efficiency has been determined and concluded.

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22 citations

Journal Article•DOI•

Effect of Cu content in CuSbS2 thin films using hybrid inks: Their photovoltaic properties and defect characteristics

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Shahara Banu¹, Shahara Banu², Yunae Cho², Kihwan Kim², Seung Kyu Ahn², Jun Sik Cho², Jihye Gwak², Ara Cho¹, Ara Cho² - Show less +5 more•Institutions (2)

Korea University of Science and Technology¹, Kier Group²

01 Jan 2019-Solar Energy Materials and Solar Cells

TL;DR: In this paper, a non-vacuum-based hybrid ink method was used to grow thin films with different Cu/Sb precursor ratios using a nonvolatile ink method and X-ray diffraction (XRD) patterns confirmed the presence of the CuSbS2 phase for an optimal precursor ratio; additional secondary phases were also observed.

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19 citations

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References

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Book•

Metal-insulator transitions

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Nevill Mott

01 Jan 1974

TL;DR: In this article, a discussion is given of some aspects of the metal insulator transition and the status of the "minimum metallic conductivity" is discussed, and the concept is valid for liquids and in some, but not all, solid systems.

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Abstract: A discussion is given of some aspects of the metal insulator transition. Particular attention is paid to the status of the “minimum metallic conductivity”. The concept is valid for liquids, and in some, but not all, solid systems.

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2,109 citations

Journal Article•DOI•

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

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Chih-Tang Sah, Robert N. Noyce, William Shockley

01 Sep 1957

TL;DR: In this article, the authors show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics.

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Abstract: For certain p-n junctions, it has been observed that the measured current-voltage characteristics deviate from the ideal case of the diffusion model. It is the purpose of this paper to show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics. This phenomenon dominates in semiconductors with large energy gap, low lifetimes, and low resistivity. This model not only accounts for the nonsaturable reverse current, but also predicts an apparent exp (qV/nkT) dependence of the forward current in a p-n junction. The relative importance of the diffusion current outside the space charge layer and the recombination current inside the space charge layer also explains the increase of the emitter efficiency of silicon transistors with emitter current. A correlation of the theory with experiment indicates that the energy level of the centers is a few kT from the intrinsic Fermi level.

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1,934 citations

"Influence of Defects on Solar Cell ..." refers background or methods in this paper

...It will be shown below that the characteristics of real solar cells behave very differently to the predictions of [2] because recombination in the depletion region contributes significantly to the cell’s total external current....
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...This large ideality factor cannot be explained with classical diode theory, and also the J02 is about 3 orders of magnitude larger than expected by [2]....
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...The classical theory of p-n junction diodes was established by Shockley [1] and was later extended by recombination in the p-n junction depletion region by Sah, Noyce, and Shockley [2]....
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...According to [2] and also to recent, more realistic numerical simulations [3], J02 should be in the order of 10 A/cm(2) for relatively poor material with a excess carrier lifetime of  = 10 μs, and the ideality factor should be maximally n = 2....
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Book•

Solar Cells: Operating Principles, Technology, and System Applications

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Martin A. Green

01 Oct 1981

TL;DR: In this paper, the solar source of light energy is described and quantified, along with a review of semiconductor properties and the generation, recombination, and the basic equations of photovoltaic device physics.

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Abstract: Solar cell theory, materials, fabrication, design, modules, and systems are discussed. The solar source of light energy is described and quantified, along with a review of semiconductor properties and the generation, recombination, and the basic equations of photovoltaic device physics. Particular attention is given to p-n junction diodes, including efficiency limits, losses, and measurements. Si solar cell technology is described for the production of solar-quality crystals and wafers, and design, improvements, and device structures are examined. Consideration is given to alternate semiconductor materials and applications in concentrating systems, storage, and the design and construction of standalone systems and systems for residential and centralized power generation. Bibtex entry for this abstract Preferred format for this abstract

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1,773 citations

"Influence of Defects on Solar Cell ..." refers methods in this paper

...It is common practice to include also these entities in a one- or two-diode model via an equivalent circuit [5]:...
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...a one-diode model, for the approximation of the I-V characteristics [5]....
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Journal Article•DOI•

On metal-insulator transitions

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Nevill Mott

01 Sep 1990-Journal of Solid State Chemistry

842 citations

Book•

Fundamentals of Solid State Electronics

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Chin-Tang Sah

01 Oct 1991

TL;DR: In this article, a homogeneous semiconductor at equilibrium drift, diffusion, generation, recombination, trapping and tunneling metaloxide-semiconductor capacitor P/N and other junction diodes metal-oxide semiconductor and other field effect transistors bipolar junction transistor and other bipolar transistor devices.

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Abstract: Electrons, bonds, bands and holes homogeneous semiconductor at equilibrium drift, diffusion, generation, recombination, trapping and tunneling metal-oxide-semiconductor capacitor P/N and other junction diodes metal-oxide-semiconductor and other field-effect transistors bipolar junction transistor and other bipolar transistor devices.

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286 citations

"Influence of Defects on Solar Cell ..." refers background in this paper

...Also modern textbooks such as Sah [4] describe the current-voltage (I-V) characteristic of solar cells on these theoretical grounds, which predicts that the reverse current-density saturates for a reverse bias below -100 mV to a constant value of -(J01 + J02)....
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...The classical theory of p-n junction diodes was established by Shockley [1] and was later extended by recombination in the p-n junction depletion region by Sah, Noyce, and Shockley [2]....
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...Also, the breakdown behavior of real (especially of MC) solar cells under reverse bias deviates significantly from the predictions in [4]....
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...According to established theory, solar cells with a base doping concentration of 10(16) cm should break down by avalanche at a reverse bias above -50 V [4]....
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...Advanced theory predicts avalanche breakdown above a certain reverse bias, which is below -50 V for typical solar cells having a base doping concentration of 10(16) cm [4]....
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