Influence of Defects on Solar Cell Characteristics
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19 citations
Cites background from "Influence of Defects on Solar Cell ..."
...at grain boundaries or dislocations [33]) and poor field effect passivation at the silicon surface [34], all of which are dependent on the manufacturing materials and processes used to produce...
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16 citations
16 citations
References
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"Influence of Defects on Solar Cell ..." refers background or methods in this paper
...It will be shown below that the characteristics of real solar cells behave very differently to the predictions of [2] because recombination in the depletion region contributes significantly to the cell’s total external current....
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...This large ideality factor cannot be explained with classical diode theory, and also the J02 is about 3 orders of magnitude larger than expected by [2]....
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...The classical theory of p-n junction diodes was established by Shockley [1] and was later extended by recombination in the p-n junction depletion region by Sah, Noyce, and Shockley [2]....
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...According to [2] and also to recent, more realistic numerical simulations [3], J02 should be in the order of 10 A/cm(2) for relatively poor material with a excess carrier lifetime of = 10 μs, and the ideality factor should be maximally n = 2....
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1,773 citations
"Influence of Defects on Solar Cell ..." refers methods in this paper
...It is common practice to include also these entities in a one- or two-diode model via an equivalent circuit [5]:...
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...a one-diode model, for the approximation of the I-V characteristics [5]....
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286 citations
"Influence of Defects on Solar Cell ..." refers background in this paper
...Also modern textbooks such as Sah [4] describe the current-voltage (I-V) characteristic of solar cells on these theoretical grounds, which predicts that the reverse current-density saturates for a reverse bias below -100 mV to a constant value of -(J01 + J02)....
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...The classical theory of p-n junction diodes was established by Shockley [1] and was later extended by recombination in the p-n junction depletion region by Sah, Noyce, and Shockley [2]....
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...Also, the breakdown behavior of real (especially of MC) solar cells under reverse bias deviates significantly from the predictions in [4]....
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...According to established theory, solar cells with a base doping concentration of 10(16) cm should break down by avalanche at a reverse bias above -50 V [4]....
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...Advanced theory predicts avalanche breakdown above a certain reverse bias, which is below -50 V for typical solar cells having a base doping concentration of 10(16) cm [4]....
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