Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
TL;DR: In this article, the influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively.
Abstract: The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 102 with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode.
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TL;DR: A significant enhancement of photoresponse from the light-controlled conductive switching based on Cu2O/rGO nanocomposites was experimentally demonstrated and shows promising applications in memory storage and logic circuits.
Abstract: A significant enhancement of photoresponse from the light-controlled conductive switching based on Cu2O/rGO nanocomposites was experimentally demonstrated. Cu2O/rGO nanocomposites were synthesized via a facile wet-reduced method. The crystalline structure, morphologies, and photoluminescence of the Cu2O/rGO nanocomposites were characterized and analyzed. The fabricated conductive switching was measured under the irradiation of a continuous laser. When the laser was turned on and off alternately, the photoconductive switching obviously displayed a state conversion between “on” and “off” reversibly. Furthermore, the typical current–voltage (I–V) and current–time (I–t) curves exhibited a relatively high switching ratio (Ion/Ioff) of 3.25 and a fast response time of 0.45 s. The excellent “on–off” characteristics of the device show promising applications in memory storage and logic circuits.
542 citations
TL;DR: Sol-gel-on-polymer–processed indium zinc oxide semiconductor nanomembrane–based ultrathin stretchable electronics with advantages of multifunctionality, simple manufacturing, imperceptible wearing, and robust interfacing are reported.
Abstract: Wearable human-machine interfaces (HMIs) are an important class of devices that enable human and machine interaction and teaming. Recent advances in electronics, materials, and mechanical designs have offered avenues toward wearable HMI devices. However, existing wearable HMI devices are uncomfortable to use and restrict the human body’s motion, show slow response times, or are challenging to realize with multiple functions. Here, we report sol-gel-on-polymer–processed indium zinc oxide semiconductor nanomembrane–based ultrathin stretchable electronics with advantages of multifunctionality, simple manufacturing, imperceptible wearing, and robust interfacing. Multifunctional wearable HMI devices range from resistive random-access memory for data storage to field-effect transistors for interfacing and switching circuits, to various sensors for health and body motion sensing, and to microheaters for temperature delivery. The HMI devices can be not only seamlessly worn by humans but also implemented as prosthetic skin for robotics, which offer intelligent feedback, resulting in a closed-loop HMI system.
185 citations
TL;DR: This review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO and covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices.
Abstract: In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.
176 citations
TL;DR: In this paper, a bilayer structure of Ag and a CH3NH3PbI3−xClx perovskite material on an FTO substrate with both digital and analog resistive switching characteristics was demonstrated.
Abstract: Organolead halide perovskite materials open up a new era for developing low-cost and high efficiency solar cells due to their simple and inexpensive fabrication process, superior light absorption coefficient, and excellent charge mobility. In addition to solar cells, hybrid perovskites have also seen dynamic advances with rapidly expanded applications to many other exciting fields including electronic and optical devices. Here, we demonstrate a new type of bifunctional resistive switching memory device based on a very simple bilayer structure of Ag and a CH3NH3PbI3−xClx perovskite material on an FTO substrate with both digital and analog resistive switching characteristics. The bi-stable resistive switching behavior with reliable endurance over 103 times and a retention time of 4 × 104 s demonstrates that the Ag/CH3NH3PbI3−xClx/FTO device can be a promising candidate for RRAM. In the low voltage sweeping region, surprisingly, analog resistive switching behavior with potentiation and depression characteristics was also observed, which can be useful in neuromorphic computing device applications. The possible Ag conducting filaments formed by redox reactions of the Ag electrode may play a key role in this newly observed resistive switching phenomenon.
134 citations
TL;DR: The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition.
Abstract: In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.
130 citations
Cites background from "Influence of electrode material on ..."
...Among emerging memory technologies [63-68], RRAM has the potential to become the ultimate next-generation non-volatile memory for its attributes of simple structure, good performance, and scalability [69-109]....
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References
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TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
Abstract: Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.
4,547 citations
TL;DR: In this paper, the authors review the current status of one of the alternatives, resistance random access memory (ReRAM), which uses a resistive switching phenomenon found in transition metal oxides.
2,641 citations
TL;DR: The Ag/ZnO:Mn/Pt device represents an ultrafast and highly scalable memory element for developing next generation nonvolatile memories and a model concerning redox reaction mediated formation and rupture of Ag bridges is suggested to explain the memory effect.
Abstract: Through a simple industrialized technique which was completely fulfilled at room temperature, we have developed a kind of promising nonvolatile resistive switching memory consisting of Ag/ZnO:Mn/Pt with ultrafast programming speed of 5 ns, an ultrahigh R(OFF)/R(ON) ratio of 10(7), long retention time of more than 10(7) s, good endurance, and high reliability at elevated temperatures. Furthermore, we have successfully captured clear visualization of nanoscale Ag bridges penetrating through the storage medium, which could account for the high conductivity in the ON-state device. A model concerning redox reaction mediated formation and rupture of Ag bridges is therefore suggested to explain the memory effect. The Ag/ZnO:Mn/Pt device represents an ultrafast and highly scalable (down to sub-100-nm range) memory element for developing next generation nonvolatile memories.
795 citations
TL;DR: In this paper, the bistable resistive memory switching in submicron sized NiO memory cells was investigated using a current-bias method, and anomalous resistance fluctuations between resistance states were observed during the resistive transition from high resistance state to low resistance state.
Abstract: Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.
538 citations
TL;DR: In this article, high-oriented and columnar-grained ZnO thin films were prepared by radio frequency magnetron sputtering at room temperature and the Pt∕ZnO∕Pt devices exhibit reversible and steady bistable resistance switching behaviors with a narrow dispersion of the resistance states and switching voltage.
Abstract: Highly (002)-oriented and columnar-grained ZnO thin films were prepared by radio frequency magnetron sputtering at room temperature The Pt∕ZnO∕Pt devices exhibit reversible and steady bistable resistance switching behaviors with a narrow dispersion of the resistance states and switching voltage Only a low forming electric field was required to induce the resistive switching characteristics The resistance ratios of high resistance state to low resistance state were in the range of 3–4 orders of magnitude within 100cycles of test It was also found that the conduction mechanisms dominating the low and high resistance states are Ohmic behavior and Poole-Frenkel emission, respectively
428 citations