Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity
TL;DR: Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 10(7) A/W under infrared light illumination.
Abstract: 12 ] Therefore, graphene-based IR detectors have much lower responsivities than photoconductors based on QDs. It is reasonable to consider that the responsivity of a graphene-based IR detector can be improved substantially by modifying the graphene fi lm with QDs, which can absorb IR light more effi ciently. On the other hand, if the carriers gener-ated by IR light can transfer to the graphene fi lm, their mobility will be much higher and thus the responsivity will be dramati-cally improved for a QD-based IR detector. Moreover, an array of graphene devices can be easily patterned by state-of-the-art techniques and this could possibly lead to elimination of the crosstalk between neighboring pixels that occur in silicon devices.
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TL;DR: An overview and evaluation of state-of-the-art photodetectors based on graphene, other two-dimensional materials, and hybrid systems based on the combination of differentTwo-dimensional crystals or of two- dimensional crystals and other (nano)materials, such as plasmonic nanoparticles, semiconductors, quantum dots, or their integration with (silicon) waveguides are provided.
Abstract: Graphene and other two-dimensional materials, such as transition metal dichalcogenides, have rapidly established themselves as intriguing building blocks for optoelectronic applications, with a strong focus on various photodetection platforms The versatility of these material systems enables their application in areas including ultrafast and ultrasensitive detection of light in the ultraviolet, visible, infrared and terahertz frequency ranges These detectors can be integrated with other photonic components based on the same material, as well as with silicon photonic and electronic technologies Here, we provide an overview and evaluation of state-of-the-art photodetectors based on graphene, other two-dimensional materials, and hybrid systems based on the combination of different two-dimensional crystals or of two-dimensional crystals and other (nano)materials, such as plasmonic nanoparticles, semiconductors, quantum dots, or their integration with (silicon) waveguides
3,025 citations
University of Cambridge1, Istituto Italiano di Tecnologia2, Lancaster University3, University of Manchester4, Catalan Institution for Research and Advanced Studies5, Technical University of Denmark6, Nokia7, University of Trento8, Queen Mary University of London9, fondazione bruno kessler10, Technische Universität München11, Polytechnic University of Milan12, Centre national de la recherche scientifique13, University of Trieste14, University of Ioannina15, University of Geneva16, Trinity College, Dublin17, Texas Instruments18, University of Paris19, Spanish National Research Council20, Leiden University21, Delft University of Technology22, University of Patras23, École Normale Supérieure24, Radboud University Nijmegen25, Nest Labs26, Airbus UK27, Seoul National University28, Yonsei University29, University of Oxford30, Chalmers University of Technology31, University of Groningen32, STMicroelectronics33, Chemnitz University of Technology34, Max Planck Society35, Aalto University36
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
Abstract: We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.
2,560 citations
TL;DR: In this paper, a survey of mixed-dimensional van der Waals (vdw) heterostructures is presented, where 2D materials with non-2D materials adhere primarily through non-covalent interactions.
Abstract: The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling-bond-free surface will interact with another through vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through non-covalent interactions. We present a succinct and critical survey of emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices. By comparing and contrasting with all-2D vdW heterostructures as well as with competing conventional technologies, we highlight the challenges and opportunities for mixed-dimensional vdW heterostructures.
1,103 citations
TL;DR: An ultra-broadband photodetector design based on a graphene double-layer heterostructure is reported, demonstrating room-temperaturePhotodetection from the visible to the mid-infrared range, with mid- Infrared responsivity higher than 1 A W(-1), as required by most applications.
Abstract: A pair of stacked graphene layers separated by a tunnel barrier show sensitive photodetection capabilities.
1,036 citations
TL;DR: In this article, the authors review the recent advances and open challenges in the field of solution-processed photodetectors, examining the topic from both the materials and the device perspective and highlighting the potential of the synergistic combination of materials and device engineering.
Abstract: Efficient light detection is central to modern science and technology. Current photodetectors mainly use photodiodes based on crystalline inorganic elemental semiconductors, such as silicon, or compounds such as III–V semiconductors. Photodetectors made of solution-processed semiconductors — which include organic materials, metal-halide perovskites and quantum dots — have recently emerged as candidates for next-generation light sensing. They combine ease of processing, tailorable optoelectronic properties, facile integration with complementary metal–oxide–semiconductors, compatibility with flexible substrates and good performance. Here, we review the recent advances and the open challenges in the field of solution-processed photodetectors, examining the topic from both the materials and the device perspective and highlighting the potential of the synergistic combination of materials and device engineering. We explore hybrid phototransistors and their potential to overcome trade-offs in noise, gain and speed, as well as the rapid advances in metal-halide perovskite photodiodes and their recent application in narrowband filterless photodetection. Conventional photodetectors, made of crystalline inorganic semiconductors, are limited in terms of the compactness and sensitivity they can reach. Photodetectors based on solution-processed semiconductors combine ease of processing, tailorable optoelectronic properties and good performance, and thus hold potential for next-generation light sensing.
934 citations
Cites methods from "Infrared Photodetectors Based on CV..."
...Large area and flexible infrared detectors with excellent stability were reported by Sun et al.(80) based upon PbS CQDs solid films cast...
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...Large area and flexible infrared detectors with excellent stability were reported by Sun et al.78 based upon PbS CQDs solid films cast and assembled with pyridine ligands on top of chemically vapour deposited (CVD) graphene achieving R ~ 107 A/W. Organohalide perovskite-graphene phototransistors have also been reported, where CH3NH3PbBr2I islands provide visible sensitization and gains up to 10 9 in the UV-visible.79 We note that pure OHP phototransistors based on CH3NH3PbI3-xClx perovskites have also been explored, that exhibited ambipolar behaviour with sub 10 µs time response operation but gains below 103.80 The absence of bandgap in graphene precludes however full exploitation of this hybrid architecture since the transport channel cannot be totally closed, which ultimately results in significant dark currents....
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References
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TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Abstract: We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
55,532 citations
TL;DR: Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability as discussed by the authors, and its true potential lies in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultrawideband tunability.
Abstract: The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential lies in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultrawideband tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light-emitting devices to touch screens, photodetectors and ultrafast lasers. Here we review the state-of-the-art in this emerging field.
6,863 citations
IBM1
TL;DR: This work demonstrates ultrafast transistor-based photodetectors made from single- and few-layer graphene that do not degrade for optical intensity modulations up to 40 GHz and suggests that the intrinsic bandwidth may exceed 500 GHz.
Abstract: Graphene research so far has focused on electronic rather than photonic applications, in spite of its impressive optical properties. These include its ability to absorb approximately 2% of incident light over a broad wavelength range despite being just one atom thick. Here, we demonstrate ultrafast transistor-based photodetectors made from single- and few-layer graphene. The photoresponse does not degrade for optical intensity modulations up to 40 GHz, and further analysis suggests that the intrinsic bandwidth may exceed 500 GHz. The generation and transport of photocarriers in graphene differ fundamentally from those in photodetectors made from conventional semiconductors as a result of the unique photonic and electronic properties of the graphene. This leads to a remarkably high bandwidth, zero source-drain bias and dark current operation, and good internal quantum efficiency.
2,840 citations