Infrared photoluminescence on molecular beam epitaxially grown Hg1-xCdxTe layers
Abstract: Hg1-xCdxTe is an important material for infrared device technology. Despite a variety of investigations on molecular beam epitaxially (MBE) grown Hg-based superlattices and modulation-doped structures, little attention has been paid to the study of the photoluminescence properties of the constituent materials. The authors report on a systematic study of infrared photoluminescene on Hg1-xCdxTe layers grown by MBE. The Fourier transform photoluminescence of Hg1-xCdxTe layers with 0.25<x<0.93 grown on (110) and (211) GaAs was investigated in the spectral range from 01 eV to 1.5 eV. Emission lines were observed with a full width at half maximum down to 15 meV. Photoluminescence and transmission properties are compared over the temperature range from 4.2 K to 300 K. The possible influence of Burstein-Moss shift, impurity bands and exponential band tails are discussed. Photoluminescence at high temperatures originates from band-to-band transitions. However, low temperature photoluminescence can be attributed either to impurity bands or to additional states due to band tails.
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...A part of such broadening can be, in principle, attributed to contributions of phonon−assisted transitions [13,21], however, in many Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs...