Infrared photoluminescence on molecular beam epitaxially grown Hg1-xCdxTe layers
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In this paper, the Fourier transform photoluminescence of Hg1-xCdxTe layers with 0.25 <x<0.93 was investigated in the spectral range from 1 eV to 1.5 eV.Abstract:
Hg1-xCdxTe is an important material for infrared device technology. Despite a variety of investigations on molecular beam epitaxially (MBE) grown Hg-based superlattices and modulation-doped structures, little attention has been paid to the study of the photoluminescence properties of the constituent materials. The authors report on a systematic study of infrared photoluminescene on Hg1-xCdxTe layers grown by MBE. The Fourier transform photoluminescence of Hg1-xCdxTe layers with 0.25<x<0.93 grown on (110) and (211) GaAs was investigated in the spectral range from 01 eV to 1.5 eV. Emission lines were observed with a full width at half maximum down to 15 meV. Photoluminescence and transmission properties are compared over the temperature range from 4.2 K to 300 K. The possible influence of Burstein-Moss shift, impurity bands and exponential band tails are discussed. Photoluminescence at high temperatures originates from band-to-band transitions. However, low temperature photoluminescence can be attributed either to impurity bands or to additional states due to band tails.read more
Citations
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References
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Journal ArticleDOI
Influence of deep level intrinsic defects on the carrier transport in p-type Hg1-xCdxTe
TL;DR: The magnetic field dependence of the Hall effect in p-type Hg 1-Cd x Te was analyzed for determining the carrier densities and their mobilities in the mixed conduction range T = 70-250 K.
Journal ArticleDOI
Broadening mechanisms near the E0 transition in narrow-gap Hg1−xCdxTe (0.2 < x < 0.6)
TL;DR: In this article, the near-band edge optical and photoelectrical properties of Hg 1− x Cd x Te are investigated by transmittance, photoconductive and luminescence spectroscopy.
Journal ArticleDOI
Extrinsic doping of CdxHg1−xTe— A review
TL;DR: In this article, the incorporation and activation of dopants in the most widely used bulk and epitaxial growth methods is reviewed and data on dopant segregation behaviour, in growth from liquids, acceptor ionization energies and carrier lifetimes are discussed and their importance is discussed.
Journal ArticleDOI
Bipolar Generation within the Exponential Tail of the Interband Absorption Edge in HgCdTe
TL;DR: Etude de la photoconductivite et des spectres de photodiode dans la zone de la queue d'Urbach de la solution solide, pour differentes compositions chimiques.
Journal ArticleDOI
Molecular beam epitaxial growth of (100) Hg0.8Cd0.2Te on Cd0.96Zn0.04Te
TL;DR: In this article, the authors investigated the Hg/Te flux ratio for the molecular beam epitaxial growth of (100) Hg0.8Cd0.2Te epilayers and showed that an optimum flux ratio exists within a narrow range between 270 and 360 at the growth temperature of 180 degrees C.