Integrated high-speed DFB light source and narrow-bandwidth RCE photodetector for WDM fiber communication network application
03 Oct 2000-Vol. 4220, pp 1-5
TL;DR: In this article, a GaInNAs/GaAs MQW RCE p-i-n photodetector with high reflectance GaAs/AlAs DBR mirrors has been demonstrated and shown the selectively detecting function with the FWHM of peak response of 12 nm.
Abstract: Electroabsorption (EA) modulator integrated with partially gain coupling distributed feedback (DFB) lasers have been fabricated and shown high single mode yield and wavelength stability. The small signal bandwidth is about 7.5 GHz. Strained Si1-xGex/Si multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetectors with SiO2/Si distributed Bragg reflector (DBR) as the mirrors have been fabricated and shown a clear narrow bandwidth response. The external quantum efficiency at 1.3 micrometer is measured to be about 3.5% under reverse bias of 16 V. A novel GaInNAs/GaAs MQW RCE p-i-n photodetector with high reflectance GaAs/AlAs DBR mirrors has also been demonstrated and shown the selectively detecting function with the FWHM of peak response of 12 nm.
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TL;DR: It is pointed out that photonic integrated devices, including high speed response laser source, narrow band response photodetector high speed wave-length converter, dense wavelength multi/demultiplexer, low loss high speedresponse photo-switch and multi-beam coupler are the key components in the system.
Abstract: Proceeding from the consideration of the demands from the functional architecture of high speed, high capacity optical communication network, this paper points out that photonic integrated devices, including high speed response laser source, narrow band response photodetector high speed wavelength converter, dense wavelength multi/demultiplexer, low loss high speed response photo-switch and multi-beam coupler are the key components in the system The, investigation progress in the laboratory will be introduced
3 citations
20 Jun 2013
TL;DR: Structural characteristics and driving factors for polder (artificial dike-surrounded field) landscapes in the East Chaohu Area of Anhui Province, China are studied to identify six landscape structures formed by the long-term human exploitation of farmland, reflecting different natural and social functions of polder's construction.
Abstract: Based on Landsat ETM+ remote sensing data and historical geography analysis, this paper studied structural characteristics and driving factors for polder (artificial dike-surrounded field) landscapes in the East Chaohu Area of Anhui Province, China. According to the characteristics of polder structure and spectral analysis of typical objects, differential methods were used to gain structural characteristics of polder landscape in this area. The results indicated that the spatial structural characteristics of polder landscape could be divided into six categories: polygon-shaped structure, jaggies-shaped structure, dendritic-shaped structure, feather-shaped structure, cricoid fan-shaped structure, and rectangular-shaped structure. All six landscape structures were formed by the long-term human exploitation of farmland, reflecting different natural and social functions of polder's construction. Finally, combined with regional environment and historical literature, this paper synthetically analyzed the five main driving factors of this artificial field development.
2 citations
2 citations
11 Aug 2009
TL;DR: In this paper, a new Extended Basis Pursuit De-Noising (EBPDN) model is brought forward and applied into salt-and-pepper noise removal, which can provide good de-noising results and outperforms other filters in terms of noise suppression and detail preservation.
Abstract: Traditional Basis Pursuit model is adapted to signal de-noising under additive Gaussian noise. Based on the different fitness error term, one new kind Extended Basis Pursuit De-Noising (EBPDN) model is brought forward and applied into salt-and-pepper noise removal. A comparison study of performance of the median filter, the peak-and-valley filter, the detail preserving filter and the EBPDN model is carried out using different types of images. EBPDN model can provide good de-noising results and outperforms other filters in terms of noise suppression and detail preservation.
1 citations
References
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TL;DR: In this paper, the authors review the family of optoelectronic devices whose performance is enhanced by placing the active device structure inside a Fabry-Perot resonantmicrocavity.
Abstract: We review the family of optoelectronic devices whose performance is enhanced by placing the active device structure inside a Fabry‐Perot resonantmicrocavity. Such resonantcavity enhanced (RCE) devices benefit from the wavelength selectivity and the large increase of the resonant optical field introduced by the cavity. The increased optical field allows RCE photodetector structures to be thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. Off‐resonance wavelengths are rejected by the cavity making RCE photodetectors promising for low crosstalk wavelength division multiplexing(WDM) applications. RCE optical modulators require fewer quantum wells so are capable of reduced voltage operation. The spontaneous emission spectrum of RCE light emitting diodes(LED) is drastically altered, improving the spectral purity and directivity. RCE devices are also highly suitable for integrated detectors and emitters with applications as in optical logic and in communication networks. This review attempts an encyclopedic overview of RCE photonicdevices and systems. Considerable attention is devoted to the theoretical formulation and calculation of important RCE device parameters. Materials criteria are outlined and the suitability of common heteroepitaxial systems for RCE devices is examined. Arguments for the improved bandwidth in RCE detectors are presented intuitively, and results from advanced numerical simulations confirming the simple model are provided. An overview of experimental results on discrete RCE photodiodes, phototransistors, modulators, and LEDs is given. Work aimed at integrated RCE devices,optical logic and WDM systems is also covered. We conclude by speculating what remains to be accomplished to implement a practical RCE WDM system.
668 citations
TL;DR: In this article, a GaAs-based p-i-n resonant-cavity-enhanced (RCE) GaInNAs photodetector operating near 1.3 μm was presented.
Abstract: We demonstrate a GaAs-based p-i-n resonant-cavity-enhanced (RCE) GaInNAs photodetector operating near 1.3 μm. The device design was optimized using a transfer matrix method and experimental absorption spectra obtained from p-i-n structures grown without a resonant cavity. The RCE photodetector was fabricated in a single growth step by using GaAs/AlAs distributed Bragg reflectors for the top and bottom mirrors. A 72% quantum efficiency was obtained with a full width at half maximum of 11 nm.
107 citations
TL;DR: In this article, a Si1-xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 mu m was reported.
Abstract: We report on a Si1-xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 mu m. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/mu m(2). The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 mu m and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 mu m is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang [Appl. Phys. Lett. 67, 566 (1995)]. (C) 2000 American Institute of Physics. [S0003-6951(00)00628-8].
28 citations
TL;DR: In this article, the single-mode selectivity, chirping and light output efficiency of photonic integrated circuits (PIC) integrating distributed feedback (DFB) semiconductor lasers and electroabsorption modulators are analyzed for the first time.
Abstract: Taking into consideration of gain coupling, characteristics such as single-mode selectivity, chirping and light output efficiency of photonic integrated circuits (PIC) integrating distributed feedback (DFB) semiconductor lasers and electroabsorption modulators are analyzed for the first time. Devices with conventional index-coupled (IC), quarter-wave-shifted (QWS) and gain-coupled (GC) DFB laser sections are calculated and compared. The chirping of GC-PIC is nearly the same as that of IC-PIC and QWS-PIC, but the single-mode selectivity of GC-PIC is much better. With a [HR-AR] coating , which is advantageous for high-power operation, GC-PIC shows a much higher probability of single-mode operation than IC-PIC, while QWS-PIC does not function at all.
9 citations