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Journal ArticleDOI

Interface Engineering of Semiconductor/Dielectric Heterojunctions toward Functional Organic Thin-Film Transistors

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TLDR
A novel approach is demonstrated that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators.
Abstract
Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic dev...

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Journal ArticleDOI

Photochromism into nanosystems: towards lighting up the future nanoworld.

TL;DR: This Review provides an account of the recent advancements in reversible photocontrol of the structures and functions of photochromic nanosystems and their applications and outlines the challenges that need to be addressed and the opportunities that can be tapped into.
Journal ArticleDOI

Multi-functional integration of organic field-effect transistors (OFETs): advances and perspectives.

TL;DR: Key strategies towards multi- functional integration of OFETs, which involves the exploration of functional materials, interfaces modifications, modulation of condensed structures, optimization of device geometry, and device integration, are summarized.
Journal ArticleDOI

25th Anniversary Article: Organic Electronics Marries Photochromism: Generation of Multifunctional Interfaces, Materials, and Devices

TL;DR: In this paper, photochromic molecules can be incorporated at various interfaces of a device, including the electrode/semiconductor interface, or even as a binary mixture in the active layer in order to impart a light responsive nature to the device.
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Interfaces in organic electronics

TL;DR: In this paper, the properties of semiconductors, including the electronic structure and charge transport, can be readily tuned by chemical design, which can be found in organic molecules and polymers.
References
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Journal ArticleDOI

Organic Thin Film Transistors for Large Area Electronics

TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
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Surface Studies of Solids by Total Reflection of X-Rays

TL;DR: In this paper, the shape of the curve of reflected x-ray intensity vs glancing angle in the region of total reflection was analyzed to study certain structural properties of the mirror surface about 10 to several hundred angstroms deep.
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A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications

TL;DR: Integration of organic transistors and rubber pressure sensors, both of which can be produced by low-cost processing technology such as large-area printing technology, will provide an ideal solution to realize a practical artificial skin.
Journal ArticleDOI

Device Physics of Solution‐Processed Organic Field‐Effect Transistors

TL;DR: In this article, the materials, charge-transport, and device physics of solution-processed organic field-effect transistors are reviewed, focusing in particular on the physics of the active semiconductor/dielectric interface.
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