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Journal ArticleDOI

Interface mixing in Ni3N/SiX bilayers induced by swift heavy ions

01 Jun 2003-Radiation Measurements (Pergamon)-Vol. 36, Iss: 1, pp 703-706
TL;DR: In this article, heavy ion-induced mixing of nitride coatings was investigated, and strong mixing occurred as soon as a material-dependent threshold S ec in the electronic stopping power S e was exceeded.
About: This article is published in Radiation Measurements.The article was published on 2003-06-01. It has received 4 citations till now. The article focuses on the topics: Ion beam mixing & Ion track.
Citations
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Journal ArticleDOI
TL;DR: A review of ion beam modifications at various solids, thin films, and multilayered systems covering wider energy ranges including the older basic concepts is given in this paper. But the results reveal that the ion-solid interaction physics provides a unique way for controlling the produced defects of the desired type at a desired location.

242 citations

Journal ArticleDOI
TL;DR: In this paper, the authors summarized the present knowledge on atomic transport processes induced by the electronic energy loss of swift heavy ions on the basis of their recent ion beam mixing experiments with layered systems.

27 citations

Journal ArticleDOI
TL;DR: In this article, an overview over the results of a systematic study on swift heavy ion beam mixing of ceramic thin layer packages is presented, and it is shown that interface mixing due to electronic energy deposition in these systems is a threshold process and can be regarded as transient interdiffusion in the molten ion track.
Abstract: In the present paper an overview over the results of a systematic study on swift heavy ion beam mixing of ceramic thin layer packages will be presented. It will be shown that interface mixing due to electronic energy deposition in these systems is a threshold process and can be regarded as transient interdiffusion in the molten ion track. The mixing threshold is given by the track formation threshold in the less sensitive of the interface forming materials with respect to beam induced damage. The mixing rate shows a square scaling with the electronic stopping power, in agreement with the global thermal spike model. The mixing efficiencies (except for NiO samples) do not vary much for different materials, and no influence of the solid state properties on the mixing effect can deduced. NiO seems to take an exceptional position within the investigated materials since it shows an extraordinary high mixing effect, which furthermore exhibits a spatial anisotropy. The latter is not yet fully understood.

15 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the swift heavy ion beam induced relocation of Au marker layers in NiO and found that, above a certain threshold value, the electronic energy deposition results in gettering of the nearby Au atoms into the latest excited ion track.
Abstract: We have investigated the swift heavy ion beam induced relocation of Au marker layers in NiO. It was found that, above a certain threshold value, the electronic energy deposition results in gettering of the nearby Au atoms into the latest excited ion track. In that way a continuous Au redistribution from a recent track into a new one occurs. For Kr-ions only short and partly segmented Au-containing cylinders of about 5 nm in diameter are found, which are symmetrically located around the initial marker plane. In beam direction the laterally averaged Au distribution shows a slight broadening, which saturates at relatively low fluences. In case of Xe- and Au-ions coherent cylindrical Au-decorated zones are formed which reach up to the surface, and which obviously allow for transversal Au transport towards the surface and for segregation of the Au in spherical nano-particles on top of the surface. The transversal transport mechanism is not of diffusion-like nature, but most probably by pressure induced viscous flow in the molten ion track.

7 citations

References
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Book
01 Apr 1980

1,402 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of the electronic stopping power (Se) in metals irradiated by swift heavy ions was investigated in the framework of the thermal-spike model, and the effect on the lattice temperature induced by swift-heavy ion irradiation was calculated.
Abstract: In the framework of the thermal-spike model the present paper deals with the effect of the electronic stopping power (Se) in metals irradiated by swift heavy ions. Using the strength of the electron-phonon coupling g(z) with the number of valence electrons z as the unique free parameter, the increment of lattice temperature induced by swift-heavy-ion irradiation is calculated. Choosing z=2, the calculated threshold of defect creation by Se for Ti, Zr, Co and Fe is about 11, 27.5, 28 and 41 keV nm-1, in good agreement with experiment. Taking the same z value, the calculation shows that Al, Cu, Nb and Ag are Se insensitive. Moreover, in Fe, the differences in the damage created by U ions of different energies but exhibiting the same value of Se may be interpreted by a velocity effect. Using z=2, other calculations suggest that Be (Se>or=11 keV nm-1), Ga (Se>or=5 keV nm-1) and Ni (Se>or=49 keV nm-1) should be sensitive to Se but Mg should not. These examples put the stress on the effect of the physical parameters governing the electron-phonon coupling constant apart from z determination: the sound velocity linked to the Debye temperature and the lattice thermal conductivity. Furthermore, a simple criterion is proposed in order to predict the Se sensitivity of metals.

493 citations

Journal ArticleDOI
TL;DR: In this article, the problem of ion-induced mixing of metal bilayers is examined in the limit of heavy metals (Z ≳ 20) and heavy energetic ions (E ≳ 100 keV) and in the absence of delayed effects such as radiation enhanced thermal diffusion.
Abstract: The problem of ion-induced mixing of metal bilayers is examined in the limit of heavy metals (Z ≳ 20) and heavy energetic ions (E ≳ 100 keV) and in the absence of delayed effects such as radiation enhanced thermal diffusion. Thermochemical effects are shown to play an important role in biasing the random walk process of mixing. A universal mixing equation is derived which predicts the evolution of the concentration profile as a function of ion dose. Finally, a model is presented which allows one to predict what metallurgical phases are formed during the mixing process. Criteria for amorphous phase formation are particularly emphasized.

391 citations

Journal ArticleDOI
TL;DR: In this paper, the gamma ray yield function of (p, αγ) and resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen.
Abstract: Gamma ray yield functions of (p, αγ) and (p, γ) resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen. The energy spread of the proton beam was found to vary linearly with the accelerating voltage from ΔE(200 keV) = 55 eV fwhm to ΔE(500 keV) = 105 eV; it is made up by a 0.012% high voltage ripple and the Doppler broadening of the resonances due to the thermal motion of the target nuclei. A long term stability of the proton energy of Applications of the accelerator for the remeasurement of some resonance energies and widths and for depth profiling of light implanted ions in metals by the resonance broadening method will be briefly discussed.

293 citations

Journal ArticleDOI
TL;DR: In this article, the authors used the thermal spike model to calculate the track radii variation versus electronic stopping power in two radiolysis resistant oxides: SiO2 quartz and BaFe12O19.
Abstract: The thermal spike model is used in order to calculate the track radii variation versus electronic stopping power Se in two radiolysis resistant oxides: SiO2 quartz and BaFe12O19. The mean diffusion length λ of the energy deposited on the electrons is determined by fitting latent track radii versus Se: 4.0 ± 0.3 and 8.2 ± 1.3 nm respectively for both materials. A decrease in the band gap Eg (12 and 1 eV respectively) means an increase in λ.

200 citations