Interface mixing in Ta/Si bilayers with Ar ions
01 Mar 2000-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms (North-Holland)-Vol. 161, Iss: 4, pp 1011-1015
TL;DR: In this article, the room-temperature synthesis of the low resistivity TaSi2 phase using ion-beam mixing of Ta/Si bilayers with Ar ions was reported.
Abstract: We report on the room-temperature synthesis of the low-resistivity TaSi2 phase using ion-beam mixing of Ta/Si bilayers with Ar ions. The formation of the silicide phase is observed for different damage energies deposited at the Ta/Si interface. The variance Δσ 2 of the reacted (TaSi2) layer thickness varies linearly with the ion fluence Φ and the reaction rate Δσ 2 /Φ is proportional to the deposited damage energy density FD. The measured mixing/reaction efficiency, Δσ 2 /ΦF D =10±1 nm5/keV, is in agreement with the value calculated by the model of compound formation under local thermal spikes.
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TL;DR: A review of ion beam modifications at various solids, thin films, and multilayered systems covering wider energy ranges including the older basic concepts is given in this paper. But the results reveal that the ion-solid interaction physics provides a unique way for controlling the produced defects of the desired type at a desired location.
242 citations
TL;DR: In this article, the authors present a software tool that can be used to extract quantitative accurate depth profiles from real samples on an industrial scale, with particular attention being given to determining both the absolute accuracy of the depth profiles and statistically accurate error estimates.
Abstract: Rutherford backscattering spectrometry (RBS) and related techniques have long been used to determine the elemental depth profiles in films a few nanometres to a few microns thick. However, although obtaining spectra is very easy, solving the inverse problem of extracting the depth profiles from the spectra is not possible analytically except for special cases. It is because these special cases include important classes of samples, and because skilled analysts are adept at extracting useful qualitative information from the data, that ion beam analysis is still an important technique. We have recently solved this inverse problem using the simulated annealing algorithm. We have implemented the solution in the `IBA DataFurnace' code, which has been developed into a very versatile and general new software tool that analysts can now use to rapidly extract quantitative accurate depth profiles from real samples on an industrial scale. We review the features, applicability and validation of this new code together with other approaches to handling IBA (ion beam analysis) data, with particular attention being given to determining both the absolute accuracy of the depth profiles and statistically accurate error estimates. We include examples of analyses using RBS, non-Rutherford elastic scattering, elastic recoil detection and non-resonant nuclear reactions. High depth resolution and the use of multiple techniques simultaneously are both discussed. There is usually systematic ambiguity in IBA data and Butler's example of ambiguity (1990 Nucl. Instrum. Methods B 45 160–5) is reanalysed. Analyses are shown: of evaporated, sputtered, oxidized, ion implanted, ion beam mixed and annealed materials; of semiconductors, optical and magnetic multilayers, superconductors, tribological films and metals; and of oxides on Si, mixed metal silicides, boron nitride, GaN, SiC, mixed metal oxides, YBCO and polymers.
165 citations
01 Apr 2003
141 citations
15 Feb 2007-Materials Science and Engineering A-structural Materials Properties Microstructure and Processing
TL;DR: In this article, a dynamic TRIM called TRIDYN was used to calculate the concentration depth profiles of implanted ions in TiN to investigate wear resistance mechanisms and the results showed that the improved wear resistance of the TiN film was mainly due to forming of nano-order TiN crystal grains in a thick amorphous layer and the decreased local state number of Ti after Ti ion implantation.
Abstract: The PVD–TiN film was implanted with titanium and nitrogen ions and the improvement in surface wear resistance was investigated. Ti ion implantation was done using a metal vapor vacuum arc (MEVVA) ion source with an implantation dose of 2 × 10 16 ions/cm 2 and at an extraction voltage of 48 kV. The wear characteristics of the implanted samples were measured and compared with the performance of the unimplanted one by a pin-on-disc apparatus and an optical interference microscope. The structures of the samples were observed by X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). A dynamic TRIM called as TRIDYN was used to calculate the concentration depth profiles of implanted ions in TiN to investigate wear resistance mechanisms. The results showed that the improved wear resistance of the TiN film was mainly due to forming of nano-order TiN crystal grains in a thick amorphous layer and the decreased local state number of Ti after Ti ion implantation.
24 citations
TL;DR: In this article, the ion-beam mixing (IBM) was studied by means of X-ray photoelectron spectroscopy (XPS) and factor analysis (FA).
18 citations
References
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IBM1
TL;DR: A review of existing widely-cited tables of ion stopping and ranges can be found in this paper, where a brief exposition of what can be determined by modern calculations is given.
Abstract: The stopping and range of ions in matter is physically very complex, and there are few simple approximations which are accurate. However, if modern calculations are performed, the ion distributions can be calculated with good accuracy, typically better than 10%. This review will be in several sections:
a)
A brief exposition of what can be determined by modern calculations.
b)
A review of existing widely-cited tables of ion stopping and ranges.
c)
A review of the calculation of accurate ion stopping powers.
10,060 citations
TL;DR: In this article, the combinatorial optimization simulated annealing algorithm is applied to the analysis of Rutherford backscattering data, which is fully automatic and does not require time-consuming human intervention.
Abstract: The combinatorial optimization simulated annealing algorithm is applied to the analysis of Rutherford backscattering data. The analysis is fully automatic, i.e., it does not require time-consuming human intervention. The algorithm is tested on a complex iron-cobalt silicide spectrum, and all the relevant features are successfully determined. The total analysis time using a PC 486 processor running at 100 MHz is comparable to the data collection time, which opens the way for on-line automatic analysis.
587 citations
IBM1
TL;DR: In this paper, the authors classified the kinetics of silicide growth into three different categories: diffusion controlled, nucleation controlled, and reaction rate controlled, with the aim of understanding both the phenomenology of growth and the specific atomic mechanisms of phase formation.
Abstract: The kinetics of silicide growth are classified into three different categories: (a) diffusion controlled, (b) nucleation controlled, (c) others (reaction rate controlled). These are analyzed with the aim of understanding both the phenomenology of growth and the specific atomic mechanisms of phase formation. Diffusion-controlled growth is discussed with respect to the Nernst-Einstein equation. Stress relaxation is considered as a possible cause of reaction-rate control. The relative merits of two different types of marker experiments are compared. A few silicides are discussed in terms of what can be inferred about diffusion mechanisms. The competition between reaction-rate and diffusion control phenomena is shown to have specific effects on the sequence of phase formation; it is also related to the formation of some amorphous compounds. Reactions between silicon and alloyed metal films are used to illustrate the respective influences of mobility and driving force factors on the kinetics of silicide growth; they can also be used to underline the dominance of nucleation over diffusion in some silicide formation processes.
380 citations
01 May 1985-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, the gamma ray yield function of (p, αγ) and resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen.
Abstract: Gamma ray yield functions of (p, αγ) and (p, γ) resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen. The energy spread of the proton beam was found to vary linearly with the accelerating voltage from ΔE(200 keV) = 55 eV fwhm to ΔE(500 keV) = 105 eV; it is made up by a 0.012% high voltage ripple and the Doppler broadening of the resonances due to the thermal motion of the target nuclei. A long term stability of the proton energy of Applications of the accelerator for the remeasurement of some resonance energies and widths and for depth profiling of light implanted ions in metals by the resonance broadening method will be briefly discussed.
293 citations
TL;DR: In this article, a review of the most recent studies in this field of research is presented, focusing on specific processes involving laterally confined (self-aligned) silicide film formation as more advanced applications require film formation only in certain localized regions on a Si wafer.
Abstract: Studies of the properties and characteristics of transition metal silicides have been stimulated by their (potential) use in integrated circuit technology. This review describes some of the most recent studies in this field of research. Formation mechanisms of silicides are discussed in some detail. A division is made between near-noble and refractory metal silicidation which aids in the understanding of differences in formation mechanisms of the various silicides. The evolution of the components of thin film stress during metal silicidation is also elucidated. In the review of the practical uses of these materials, emphasis is placed on specific processes involving laterally confined (self-aligned) silicide film formation as more advanced applications require film formation only in certain localized regions on a Si wafer.
173 citations