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Journal ArticleDOI

Investigation of design parameters for radiation hard silicon microstrip detectors

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TLDR
In this article, the dependence of interstrip and backplane capacitance as well as depletion and breakdown voltage on the design parameters and substrate characteristics of the microstrip detectors was investigated.
Abstract
In the context of the development of radiation hard silicon microstrip detectors for the CMS Tracker, we have investigated the dependence of interstrip and backplane capacitance as well as depletion and breakdown voltage on the design parameters and substrate characteristics of the devices. Measurements have been made for strip pitches between 60 and 240 μm and various strip implants and metal widths, using multi-geometry devices, fabricated on wafers of either 〈1 1 1〉 or 〈1 0 0〉 crystal orientation, of resistivities between 1 and 6 kΩ cm and of thicknesses between 300 and 410 μm . The effect of irradiation on properties of devices has been studied with 24 GeV /c protons up to a fluence of 4.3×10 14 cm −2 .

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Journal ArticleDOI

The CMS experiment at the CERN LHC

S. Chatrchyan, +3175 more
TL;DR: The Compact Muon Solenoid (CMS) detector at the Large Hadron Collider (LHC) at CERN as mentioned in this paper was designed to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1)
Journal ArticleDOI

Processing of microstrip detectors on Czochralski grown high resistivity silicon substrates

TL;DR: In this article, the authors have processed large-area strip sensors on silicon wafers grown by the magnetic Czochralski (MCZ) method, which have nominal resistivity of 900 Ω cm and oxygen concentration of less than 10 ppma.
Journal ArticleDOI

Electronics and data acquisition

TL;DR: In this paper, the authors discuss electronics requirements, the configurations of major LHC detectors, and the readout systems with extreme performance requirements, i.e., silicon strip and pixel systems.
References
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Proceedings Article

Physics of semiconductor devices

S. M. Sze
Book

Handbook of Radiation Effects

TL;DR: In this paper, the response of materials and devices to radiation in space radiation environments is investigated, including metal-oxide semiconductor (MOS) devices, Diodes, solar cells, and opto-electronics.
Journal ArticleDOI

CMOS low noise amplifier for microstrip readout Design and results

TL;DR: In this article, a low noise preamplifier and shaper chip has been designed and built in 1.5 μm CMOS technology to be used for readout of Si microstrip detectors.
Journal ArticleDOI

The deconvolution method of fast pulse shaping at hadron colliders

TL;DR: In this paper, the authors describe a technique for front-end signal processing of signals from LHC or SSC detectors which precisely defines the origin of an event in time while maintaining amplitude measurement with an excellent signal to noise ratio.
Journal ArticleDOI

Radiation studies and operational projections for silicon in the ATLAS inner detector

TL;DR: In this article, the current models for bulk damage in high resistivity silicon have been reviewed and the damage constants were obtained from a global data survey, on this basis the degradation of the silicon counters in the ATLAS Inner Detector during a 10-year LHC operation is forecasted.
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