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Journal ArticleDOI

Investigations on the Optical Properties of Undoped, Fluorine Doped and Antimony Doped Tin Oxide Films

S. Shanthi, +2 more
- 01 Sep 1999 - 
- Vol. 34, Iss: 8, pp 1037-1046
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TLDR
In this paper, the optical properties of these films are investigated in the entire UV-Visible-IR region (0.2 - 10 mikrom). The observed absorption edge lies at 3.65 eV for undoped tin oxide and on doping it shifts towards higher energies, which is due to the Moss-Burstein effect.
Abstract
Undoped, fluorine doped and antimony doped tin oxide films are prepared on quartz plates by Spray pyrolysis technique. The films grown at the optimum substrate temperature with different doping levels have been chosen for this study. Optical properties of these films are investigated in the entire UV-Visible -IR region (0.2 - 10 mikrom). The observed absorption edge lies at 3.65 eV for undoped tin oxide and on doping it shifts towards higher energies, which is due to the Moss - Burstein effect. For fluorine doping depending upon the fluorine concentration, the absorption edge lies in the range 3.9 - 4.14 eV and for antimony doping it lies in the range 3.82 - 4.1 eV. In the undoped tin oxide films the direct allowed transition occurs at 4.02 eV and indirect allowed transition occurs at 2.43 eV, whereas for fluorine doped tin oxide and antimony doped tin oxide films, the direct allowed transitions occur in the range 4.18 - 4.28 and 4.13 - 4.22 eV respectively and the indirect allowed transitions occur in the range 2.63 - 2.73 and 2.54 - 2.65 eV respectively. Optical properties near the plasma edge have been analyzed using Drude's theory. The dependence of effective mass on carrier concentration has been explained on the basis of nonparabolicity of the conduction band. The shift in the fermi energy, calculated on the basis of energy dependent effective mass, is consistent with the measured shift in the absorption edge.

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Citations
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Journal ArticleDOI

Controlling Photoactivity in Ultrathin Hematite Films for Solar Water-Splitting

TL;DR: In this article, a substrate pretreatment using tetraethoxysilicate (TEOS) is reported; it results in drastic improvements in the photoperformance of 12.5 nm thick films of hematite.
Journal ArticleDOI

Band gap and work function tailoring of SnO2 for improved transparent conducting ability in photovoltaics

TL;DR: In this article, the authors show using density functional theory that incorporation of Pb into SnO2 reduces the band gap through lowering of the conduction band minimum, thereby increasing the electron affinity.
Journal ArticleDOI

Studies on micro-structural and electrical properties of spray-deposited fluorine-doped tin oxide thin films from low-cost precursor

TL;DR: In this article, thin films of fluorine-doped tin oxide (SnO2:F) on glass were prepared by spray pyrolysis technique using stannous chloride (SnCl2) and ammonium fluoride (NH4F) as precursors.
Journal ArticleDOI

Process for recovery of indium from ITO scraps and metallurgic microstructures

TL;DR: In this article, an efficient and simple method for recovery of pure indium from used materials using hydrometallurgical and hot immersion processes is proposed. But the method is limited to the case of indium tin oxide (ITO).
References
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Journal ArticleDOI

Optical Properties of Thin Solid Films

O. S. Heavens, +1 more
- 01 Mar 1956 - 
Journal ArticleDOI

The Interpretation of the Properties of Indium Antimonide

TL;DR: In this paper, the optical properties of InSb are analyzed and precise values for the position and temperature dependence of the absorption edge are given, which is explained by the very low effective mass of the conduction electrons, estimated by three methods to be about 0.03 of the free electron mass.
Journal ArticleDOI

Electrical and optical properties of undoped and antimony‐doped tin oxide films

TL;DR: In this paper, the electrical and optical properties of undoped and antimony-doped tin oxide films have been studied and the temperature dependence of electron mobility has been analyzed to establish the electron conduction mechanism.
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