Ion implantation in β-Ga2O3: Physics and technology
26 Mar 2021-Journal of Vacuum Science and Technology (American Vacuum SocietyAVS)-Vol. 39, Iss: 3, pp 030802
TL;DR: In this paper, the status of ion implantation in β-Ga2O3 is reviewed and the results of experimental study of damage under ion irradiation and the properties of Ga 2O3 layers doped by ion implantations are discussed.
Abstract: Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties The very high breakdown electric field and the figure of merit rivaled only by diamond have tremendous potential for the next generation “green” electronics enabling efficient distribution, use, and conversion of electrical energy Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices Here, the status of ion implantation in β-Ga2O3 nowadays is reviewed Attention is mainly paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation The results of ab initio theoretical calculations of the impurities and defect parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted The use of ion implantation in the development of Ga2O3-based devices, such as metal oxide field-effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics Finally, the most important challenges to be overcome in this field of science and technology are discussed
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TL;DR: In this paper , a review of reported trap states in the bandgaps of different polymorphs of the emerging ultrawide bandgap semiconductor Ga2O3 is given, where the trap states span the entire bandgap range in the three stable (β) or meta-stable polymorphs (α and ǫ) and are assigned either to impurities such as Fe or to native defects and their complexes.
Abstract: A review is given of reported trap states in the bandgaps of different polymorphs of the emerging ultrawide bandgap semiconductor Ga2O3. The commonly observed defect levels span the entire bandgap range in the three stable (β) or meta-stable polymorphs (α and ɛ) and are assigned either to impurities such as Fe or to native defects and their complexes. In the latter case, the defects can occur during crystal growth or by exposure to radiation. Such crystalline defects can adversely affect material properties critical to device operation of transistors and photodetectors, including gain, optical output, threshold voltage by reducing carrier mobility, and effective carrier concentration. The trapping effects lead to degraded device operating speed and are characterized by long recovery transients. There is still significant work to be done to correlate experimental results based on deep level transient spectroscopy and related optical spectroscopy techniques to density functional theory and the dominant impurities present in the various synthesis methods to understand the microscopic nature of defects in Ga2O3.
24 citations
TL;DR: In this paper , a review on different chemical and physical techniques for synthesis of nanostructured β-gallium oxide, as well as its properties and applications is presented, along with their transformation state to β-Ga2O3.
Abstract: Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical techniques for synthesis of nanostructured β-gallium oxide, as well as its properties and applications. The polymorphs of Ga2O3 are highlighted and discussed along with their transformation state to β-Ga2O3. Different processes of synthesis of thin films, nanostructures and bulk gallium oxide are reviewed. The electrical and optical properties of β-gallium oxide are also highlighted, based on the synthesis methods, and the techniques for tuning its optical and electrical properties compared. Based on this information, the current, and the possible future, applications for β-Ga2O3 nanostructures are discussed.
19 citations
TL;DR: In this article , the effect of ion-beam-induced defect formation and physical characteristics of wide and ultra-wide bandgap semiconductors are studied and the mechanisms of ion induced defect formation are not well-studied and understood.
13 citations
TL;DR: In this paper, structural changes under the action of Al+ irradiation have been investigated by X-ray diffraction for polymorphic Ga2O3 layers grown by halide vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of e(κ)-phase.
11 citations
TL;DR: In this article , the authors used aberration-corrected scanning transmission electron microscopy (ATEM) to investigate the structural damage in ion-implanted β-Ga2O3 and its recovery upon heat treatment with the atomic-scale spatial resolution.
Abstract: β-Ga2O3 is an emerging ultra-wide bandgap semiconductor, holding a tremendous potential for power-switching devices for next-generation high power electronics. The performance of such devices strongly relies on the precise control of electrical properties of β-Ga2O3, which can be achieved by implantation of dopant ions. However, a detailed understanding of the impact of ion implantation on the structure of β-Ga2O3 remains elusive. Here, using aberration-corrected scanning transmission electron microscopy, we investigate the nature of structural damage in ion-implanted β-Ga2O3 and its recovery upon heat treatment with the atomic-scale spatial resolution. We reveal that upon Sn ion implantation, Ga2O3 films undergo a phase transformation from the monoclinic β-phase to the defective cubic spinel [Formula: see text]-phase, which contains high-density antiphase boundaries. Using the planar defect models proposed for the [Formula: see text]-Al2O3, which has the same space group as β-Ga2O3, and atomic-resolution microscopy images, we identify that the observed antiphase boundaries are the {100}1/4 ⟨110⟩ type in cubic structure. We show that post-implantation annealing at 1100 °C under the N2 atmosphere effectively recovers the β-phase; however, nano-sized voids retained within the β-phase structure and a [Formula: see text]-phase surface layer are identified as remanent damage. Our results offer an atomic-scale insight into the structural evolution of β-Ga2O3 under ion implantation and high-temperature annealing, which is key to the optimization of semiconductor processing conditions for relevant device design and the theoretical understanding of defect formation and phase stability.
10 citations
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