Ion-induced room temperature synthesis of low resistive nickel germanide phase
23 Jul 1998-Journal of Applied Physics (American Institute of Physics)-Vol. 83, Iss: 4, pp 2363-2365
TL;DR: In this paper, the Ni2Ge phase was synthesized by MeV ion beam mixing using Kr and Ar ions at and above room temperatures, and the critical temperature which marks the beginning of the temperature dependent mixing was 326 K. This was about an order of magnitude higher than the value predicted by any of the existing ballistic and spike models.
Abstract: Low resistivity Ni2Ge phase, a promising candidate as a contact and interconnect material for very large scale integrated circuit applications, has been synthesized by MeV ion beam mixing using Kr and Ar ions at and above room temperatures. Thin films of this phase produced by ion beam mixing show resistivity comparable to the one produced by thermal annealing and is much lower than that of many important silicides. The critical temperature which marks the beginning of the temperature dependent mixing is 326 K. The room temperature mixing efficiency for this system is found to be about an order of magnitude higher than the value predicted by any of the existing ballistic and spike models. The crystalline nature of the mixed region and the occurrence of the Ni2Ge phase have been discussed.
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TL;DR: In this article, the preparation methodologies and the microstructural characteristics of semiconductor thin films, including SnO 2 thin films and metal oxides, are introduced and compared.
65 citations
TL;DR: A wide temperature range is revealed to convert the Ge nanowire to single-crystalline Ni(2)Ge by a thermal diffusion process and electrical measurements show a good p-type FET behavior with an on/off ratio over 10(3) and a one order of magnitude improvement in hole mobility from that of SFLS-synthesized Genanowire.
Abstract: In this study, we report on the formation of a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure and its field effect characteristics by controlled reaction between a supercritical fluid‐liquid‐solid (SFLS) synthesized Ge nanowire and Ni metal contacts. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies reveal a wide temperature range to convert the Ge nanowire to single-crystalline Ni2Ge by a thermal diffusion process. The maximum current density of the fully germanide Ni2Ge nanowires exceeds 3.5 × 10 7 Ac m −2 , and the resistivity is about 88 μ� cm. The in situ reaction examined by TEM shows atomically sharp interfaces for the Ni2Ge/Ge/Ni2Ge heterostructure. The interface epitaxial relationships are determined to be Ge[01¯
51 citations
TL;DR: In this paper, the formation of a-axis oriented Au06Ge04 alloy on a Si(100) substrate on 120 MeV Au-ion irradiation of a Au/Ge bilayer and subsequent vacuum annealing at 360 °C was studied using Rutherford backscattering spectrometry.
Abstract: We report on the formation of a-axis oriented Au06Ge04 alloy on a Si(100) substrate on 120 MeV Au-ion irradiation of a Au/Ge bilayer and subsequent vacuum annealing at 360 °C Irradiation-induced changes occurring across the Au/Ge interface were studied using Rutherford backscattering spectrometry Phase identification was done by x-ray diffraction and the surface morphology of the samples was studied by scanning electron microscopy Formation of oriented Au06Ge04 alloy was confirmed by transmission electron microscopy and discussed on the basis of swift heavy ion induced effects followed by thermal annealing
28 citations
TL;DR: In this article, the microstructure of the metal Au film plays an important role in metal-induced crystallization for polycrystalline Au/amorphous Ge thin bilayer films upon annealing.
Abstract: Microstructural changes and fractal Ge nanocrystallites in polycrystalline Au/amorphous Ge thin bilayer films upon annealing have been investigated by scanning electron microscopy, transmission electron microscopy observations and x-ray energy-dispersive spectroscopy (EDS). Experimental results indicated that the microstructure of the metal Au film plays an important role in metal-induced crystallization for Au/Ge thin bilayer films upon annealing. Interestingly, we found the position exchange of Au and Ge films and the formation of the fractal Ge nanocrystallites induced by annealing. EDS microanalysis indicated that although there is lateral interdiffusion of Au and Ge atoms, the thickness of the fractal region and the matrix remain nearly the same. At the same time, EDS shows that there are also Au aggregates extending out of the films. It is suggested that, besides the preferred nucleation at the Au/Ge interface, the breaking of Ge?Ge bonds may stimulate the crystallization of amorphous Ge, so that the crystallization temperature of Au/Ge system is much lower than that of the isolated amorphous Ge system.
19 citations
TL;DR: In this article, the atomic transport occurring across the interface of Cu/Ge and Co/Ge layers leading to the synthesis of Cu 3 Ge and Co 2 Ge phases under MeV Kr and Ar ion irradiations was reported.
17 citations
References
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TL;DR: In this article, a Monte Carlo computer program was developed for determining ion range and damage distributions as well as angular and energy distributions of backscattered and transmitted ions in amorphous targets.
4,204 citations
Book•
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01 Jan 1992
TL;DR: In this article, an introductory source aimed at practicing engineers and material scientists, the text explains how to use phase diagrams, and more than 1,000 binary and 300 ternary diagrams included cover most commercial alloy systems; compositions are presented in weight percent.
Abstract: An introductory source aimed at practicing engineers and material scientists, the text explains how to use phase diagrams. The more than 1,000 binary and 300 ternary diagrams included cover most commercial alloy systems; compositions are presented in weight percent. Appendices include the melting and boiling points of the elements, their allotropic transformation and magnetic transition temperatures and their crystal structures.
2,882 citations
01 Jun 1985-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: Estimates of the number of arithmetic operations used by the program for any simulation to demonstrate the tradeoffs between accuracy, computation time, and algorithm sophistication are provided.
Abstract: A computer program which simulates Rutherford backscattering spectra is currently in use at Cornell University and other institutions. Straggling and detector resolution are among the effects included. Samples are considered to be made up of a finite number of layers, each with uniform composition. The emphasis in the mathematics is on accuracy beyond that of iterated surface approximation methods. Thicker layers can thus be analyzed without a net loss in accuracy. The mathematical description of the sample can then have fewer layers and fewer calculations are required. This paper provides estimates of the number of arithmetic operations used by the program for any simulation to demonstrate the tradeoffs between accuracy, computation time, and algorithm sophistication.
2,551 citations
TL;DR: In this paper, the half-widths of matrix relocation profiles were determined explicitly for ion-impurity knockon events (recoil implantation) as well as isotropic cascade mixing.
443 citations
TL;DR: In this paper, the effective heat of formation rule is used to predict first phase formation in metal-aluminum thin-film systems and to predict subsequent phase sequence for thin metal films on thick aluminum or thin aluminum on thick metal substrates.
Abstract: The effective heat of formation (ΔH’) concept allows heats of formation to be calculated as a function of concentration. In this work the effective heat of formation rule is used to predict first phase formation in metal‐aluminum thin‐film systems and to predict subsequent phase sequence for thin metal films on thick aluminum or thin aluminum on thick metal substrates. The effective concentration at the growth interface is taken to be that of the lowest temperature eutectic (liquidus) for the binary system. Although the effective heat of formation rule may predict that formation of a certain phase would lead to the largest free energy change, this phase does not necessarily form at the moving reaction interface if it has difficulty to nucleate. By excluding phases with a large number of atoms per unit cell and which thus have difficulty to nucleate, the effective heat of formation rule successfully predicts first phase aluminide formation for all 15 metal‐aluminum binary systems for which experimental data could be found. It is also shown how the effective heat of formation rule can be used to predict formation and decomposition of aluminide phases in contact with each other or in contact with their component metals.
256 citations