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Proceedings ArticleDOI

Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices

TL;DR: In this article, a novel n-type metal gate electrode with tunable work function and good thermal stability was proposed for the first time by incorporating lanthanide elements into metal nitride gates, such as TaN and HfN, which can be continuously tuned down to 4.2/spl sim/4.3 eV.
Abstract: Lanthanide-incorporated metal nitride (lanthanide-MN/sub x/) is investigated as a novel n-type metal gate electrode with tunable work function and good thermal stability for the first time. By incorporating lanthanide elements, such as terbium (Tb), erbium (Er), or ytterbium (Yb), into metal nitride gates, such as TaN and HfN, the work function of MN/sub x/ can be continuously tuned down to 4.2/spl sim/4.3 eV even after 1000/spl deg/C RTA by varying the lanthanide concentrations. In addition, the lanthanide-MN/sub x/ gates exhibit good thermal stability up to 1000/spl deg/C on both SiO/sub 2/ and high-k HfAlO. Possible mechanism for the stability of these metal gates is also discussed and the results show that the enhancement of the nitrogen content in lanthanide-MN/sub x/ films could be responsible.
Citations
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Patent
03 Jan 2007
TL;DR: In this paper, the work function of a conductive electrode stack is changed by introducing metal impurities into a metal-containing material layer which is present in the electrode stack, depending on whether the electrode is to have an n-type or a p-type work function.
Abstract: Semiconductor structures, such as, for example, field effect transistors (FETs) and/or metal-oxide-semiconductor capacitor (MOSCAPs), are provided in which the workfunction of a conductive electrode stack is changed by introducing metal impurities into a metal-containing material layer which, together with a conductive electrode, is present in the electrode stack. The choice of metal impurities depends on whether the electrode is to have an n-type workfunction or a p-type workfunction. The present invention also provides a method of fabricating such semiconductor structures. The introduction of metal impurities can be achieved by codeposition of a layer containing both a metal-containing material and workfunction altering metal impurities, forming a stack in which a layer of metal impurities is present between layers of a metal-containing material, or by forming a material layer including the metal impurities above and/or below a metal-containing material and then heating the structure so that the metal impurities are introduced into the metal-containing material.

40 citations

Journal ArticleDOI
TL;DR: In this article, the portrait of future integration circuit fabrication and the distribution of semiconductor manufacturing centers in next decade is sketched and the possible limits for the scaling will also be elaborated.
Abstract: The downsizing of CMOS devices has been accelerated very aggressively in both production and research in recent years. Sub-100 nm gate length CMOS large-scale integrated circuits (LSIs) have been used for many applications and five nanometer gate length MOS transistor was even reported. However, many serious problems emerged when such small geometry MOSFETs are used to realize a large-scale integrated circuit. Even at the 'commercial 45 nm (HP65nm) technology node', the skyrocketing rise of the production cost becomes the greatest concern for maintaining the downsizing trend towards 10 nm. In this paper, future semiconductor manufacturing challenges for nano-sized devices and ultra large scale circuits are analyzed. The portraits of future integration circuit fabrication and the distribution of semiconductor manufacturing centers in next decade are sketched. The possible limits for the scaling will also be elaborated.

32 citations

Proceedings ArticleDOI
01 Dec 2005
TL;DR: In this paper, a dual effective work-function of 4.15 and 4.9 eV were obtained in TaTb0.2N/HflON and Ir/HfAlON at 1.7 nm EOT.
Abstract: Metallic diffusion through high-K HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phim,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HflON and Ir/HfAlON at 1.7 nm EOT. Good dual phim,eff of 4.15 and 4.9 eV are also obtained in YbxSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature

25 citations


Cites methods from "Lanthanide-incorporated metal nitri..."

  • ...In this paper, we have studied both low work-function Lanthanide-Nitride [ 5 ] and high workfunction TaIrN and Ir for dual gate electrodes....

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  • ...For comparison, metal-gate/HfO2 devices were made, as were low temperature FUSI-gated CMOS [4]-[ 5 ]-by depositing HfAlON and amorphous-Si, source- drain B + or P + implant,...

    [...]

Journal ArticleDOI
TL;DR: In this paper, various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs).
Abstract: Various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs). It is found that TaC and HfC are more suitable for the CMOS device application among the various metal carbides. HfC is demonstrated to be a good candidate for NMOS because of its low WF and excellent thermal stability, while TaC Al shows a high WF and good thermal stability suitable for PMOS device application. In addition, HfC and TaC have a wide range of WF tunability using thin LaN and AlN interlayer or introduction of La and Al into the metal carbides.

12 citations

Journal ArticleDOI
TL;DR: In this paper, a combinatory approach of thermogravimetric and differential thermal analysis was used to investigate the reaction of several rare earth (RE ) metals with gaseous hydrogen and the subsequent reaction of the resulting hydrides with nitrogen gas.

12 citations

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