Journal ArticleDOI
Large-signal analysis of a silicon Read diode oscillator
D.L. Scharfetter,H.K. Gummel +1 more
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TLDR
In this article, the authors presented theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode.Abstract:
This paper presents theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode. A simplified theory is employed to obtain a starting design. This design is then modified to achieve higher efficiency operation as specific device limitations are reached in large-signal (computer) operation. Self-consistent numerical solutions are obtained for equations describing carrier transport, carrier generation, and space-charge balance. The solutions describe the evolution in time of the diode and its associated resonant circuit. Detailed solutions are presented of the hole and electron concentrations, electric field, and terminal current and voltage at various points in time during a cycle of oscillation. Large-signal values of the diode's negative conductance, susceptance, average voltage, and power-generating efficiency are presented as a function of oscillation amplitude for a fixed average current density. For the structure studied, the largest microwave power-generating efficiency (18 percent at 9.6 GHz) has been obtained at a current density of 200 A/cm2, but efficiencies near 10 percent were obtained over a range of current density from 100 to 1000 A/cm2.read more
Citations
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Journal ArticleDOI
Solving the Boltzmann equation to obtain electron transport coefficients and rate coefficients for fluid models
G J M Hagelaar,Leanne Pitchford +1 more
TL;DR: The BOLSIG+ solver as mentioned in this paper provides steady-state solutions of the BE for electrons in a uniform electric field, using the classical two-term expansion, and is able to account for different growth models, quasi-stationary and oscillating fields, electron-neutral collisions and electron-electron collisions.
Journal ArticleDOI
Device model for the operation of polymer/fullerene bulk heterojunction solar cells
TL;DR: In this paper, a numerical device model that consistently describes the currentvoltage characteristics of polymer:fullerene bulk heterojunction solar cells is developed, and the model predicts that an increased hole mobility together with a reduction of the acceptor strength of 0.5 eV will lead to a maximum attainable efficiency of 5.5% in the PPV/PCBM-based solar cells.
Journal Article
Device model for the operation of polymer/fullerene bulk heterojunction solar cells
TL;DR: In this article, a numerical device model that consistently describes the currentvoltage characteristics of polymer:fullerene bulk heterojunction solar cells is developed, and the model predicts that an increased hole mobility together with a reduction of the acceptor strength of 0.5 eV will lead to a maximum attainable efficiency of 5.5% in the PPV/PCBM-based solar cells.
Journal ArticleDOI
Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study
TL;DR: In this paper, a 3D simulation study of random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFETs is presented.
Journal ArticleDOI
An integral charge control model of bipolar transistors
H.K. Gummel,H. C. Poon +1 more
TL;DR: A compact model of bipolar transistors suitable for network analysis computer programs is presented, through the use of a new charge control relation linking junction voltages, collector current, and base charge, which substantially exceeds that of existing models of comparable complexity.
References
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Journal ArticleDOI
Statistics of the Recombinations of Holes and Electrons
William Shockley,W. T. Read +1 more
TL;DR: In this article, the statistics of the recombination of holes and electrons in semiconductors were analyzed on the basis of a model in which the recombinations occurred through the mechanism of trapping.
Journal ArticleDOI
Resistivity of bulk silicon and of diffused layers in silicon
TL;DR: In this paper, the resistivity and impurity concentration in heavily doped silicon are reported and incorporated in a graph showing the resistivities (at T = 300°K) of n-and p-type silicon as a function of donor or acceptor concentration.
Journal ArticleDOI
A proposed high-frequency, negative-resistance diode
TL;DR: In this paper, a semiconductor diode designed to operate as an oscillator when mounted in a suitable microwave cavity is described and analyzed, and it appears possible to obtain over 20 watts of ac power in continuous operation at 5 kmc.
Journal ArticleDOI
Ionization Rates of Holes and Electrons in Silicon
TL;DR: In this article, the ionization rates of charge carriers in silicon have been measured and fit to the recent theoretical calculations of Baraff; in contrast, none of the existing published data could fit to these theoretical curves.