LASER system for space environment emulation
07 Apr 2011-pp 1-4
TL;DR: The Sensors and Electronic Instrumentation Group of the University Complutense of Madrid has developed a system to emulate the cosmic radiations effects on electronic devices by LASER irradiations as discussed by the authors.
Abstract: The Sensors and Electronic Instrumentation Group of the University Complutense of Madrid has developed a system to emulate the cosmic radiations effects on electronic devices by LASER irradiations. Of great interest to the nuclear industry and space electronics, this project was carried out partially supported by the company ALTER SPAIN S.A., specialized in engineering, quality management and testing of high reliability electronic components for space applications.
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01 Sep 2017
TL;DR: A demonstration of the radiation tolerance of the optical high-speed scrubbing based on an optically reconfigurable gate array VLSI by using lasers that emulate strong radiation environments is presented.
Abstract: Recently, field programmable gate arrays (FPGAs) are anticipated for use in high-radiation environments such as the Fukushima Daiichi nuclear power plant. According to recent news, regions with 650 Sv/h radiation have been found at the Fukushima Daiichi nuclear power plant. Under such extremely high radiation environments, high-speed scrubbing operations must be used to maintain correct circuit information on the configuration memory of programmable gate arrays. Up to now, optical high-speed scrubbing based on an optically reconfigurable gate array has been proposed. This paper presents a demonstration of the radiation tolerance of the optical high-speed scrubbing based on an optically reconfigurable gate array VLSI by using lasers that emulate strong radiation environments. It has been confirmed that 70-ns period high-speed scrubbing operations on the optically reconfigurable gate array are never disturbed by the emulated radiation.
24 Dec 2016
TL;DR: In this article, the transient radiation effect of MOS devices irradiated by a pulse laser is studied using TCAD tool, and the results show that the leakage current of the substrate of the MOS device leads to increased current amplitude with the intensity of the laser.
Abstract: In this paper, the transient radiation effect of MOS devices irradiated by pulse laser is studied using TCAD tool. Firstly, the laser radiation model is built up based on the TCAD tool, and also MOS devices model are created and the I-V characteristics are simulated for proving their correctness. With the pulse laser model, the transient responses of MOS devices working in different modes irradiated by pulse laser are simulated. The results show that the transient radiation effect caused by pulse laser when irradiating MOS devices leads to leakage current of the substrate of MOS devices, and the current amplitude increases with the laser’s intensity. Introduction In the radiation environment, the interaction of gamma rays, neutrons etc. with semiconductor devices can induce ionization effects and short term effects, which can severely impact the function of devices and circuits [1]. Therefore, devices and circuits working in harsh environments have to be tested before using them in certain missions. Pulsed X-ray machines and linear accelerators are commonly used to study these radiation effects and analysis the reliability of devices and circuits; however, they require relatively large installations and have a high cost of operation. The laser interacting with semiconductor materials can produce photoelectric effect, which can excite electron-hole pairs in the semiconductor. This is similar with the radiation effect caused by gamma or X rays and ions that can inject excess carries to the semiconductor materials or devices. Habing from SNL first reported the use of pulse laser to simulate the radiation effects of semiconductor devices. It is proved that the pulse laser can effectively simulate the transient radiation effect [2]. In practical use, the pulse laser facility has the advantages of low cost, easy control and precise spatial resolution, which make the laser simulation technique very popular in radiation area. It can simulate the radiation effect and help analysis the reliability of semiconductor devices flexibly and safely in the laboratory [3-6]. TCAD (Technology Computer Aided Design) tool can be used to model semiconductor fabrication and semiconductor device operation. It can help study the physical characteristics of devices used in circuits from lower level. In this paper, based on the TCAD tool, a laser radiation model is built up for deeply studying the transient radiation effect of the pulse laser interacting with MOS (Metal Oxide Semiconductor) devices. The structure of this paper is as follows: in the first section, the laser radiation model based on TCAD is descripted; besides, the MOS devices used for simulation is created. Then, with the laser radiation model, simulation results of pulse laser irradiating MOS devices are given and analyzed. And finally the paper draws conclusions. Simulation Setup A. Pulse laser modeling As shown in Figure 1, when a laser illuminates a semiconductor structure, a reflection/ transmission process occurs at interfaces. The photons transmitted inside the semiconductor device are absorbed by the semiconductor material or escape from the structure. If the energy of the 4th International Conference on Electrical & Electronics Engineering and Computer Science (ICEEECS 2016) Copyright © 2016, the Authors. Published by Atlantis Press. This is an open access article under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/). Advances in Computer Science Research, volume 50
Cites background from "LASER system for space environment ..."
...It can simulate the radiation effect and help analysis the reliability of semiconductor devices flexibly and safely in the laboratory [3-6]....
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01 Jul 2017
TL;DR: In this paper, a PN junction is chosen for simulating the Single Event Effects (SEEs) induced by the pulsed laser as well as heavy ions, and the transient current responses related with SEEs are simulated, and also the distributions of the electrostatic potential and carrier generation inside the device are plotted.
Abstract: In this paper, the laser radiation model is built up with TCAD (Technology Computer Aided Design) tool. And a PN junction is chosen for simulating the Single Event Effects (SEEs) induced by the pulsed laser as well as heavy ions. The transient current responses related with SEEs are simulated, and also the distributions of the electrostatic potential and carrier generation inside the device are plotted. Simulation results demonstrate that the pulsed laser can simulate single event effects effectively in spite of the different mechanisms responsible for generating electron-hole pairs between pulsed laser and heavy ions. And it is indicated that the pulsed laser simulation with TCAD is significant for the laser experiments.
Cites background from "LASER system for space environment ..."
...For these factors, the use of the pulsed laser for transient radiation effects studies become more and more popular in recent years [6]-[8]....
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01 Aug 2016
TL;DR: In this article, a laser radiation model based on TCAD is built up and some simulations of laser irradiating semiconductor material are presented, and by comparing the simulation results the relationship between laser intensity and gamma dose rate is obtained.
Abstract: In this paper, a laser radiation model based on TCAD is built up. With this model, some simulations of laser irradiating semiconductor material are presented. And also simulations of gamma ray irradiating semiconductor material are given. By comparing the simulation results the relationship between laser intensity and gamma dose rate is obtained. The results demonstrate that the laser radiation model is practicable in TCAD for reliability analysis and the laser simulation technique is reliable to simulate dose rate effect.
Cites background from "LASER system for space environment ..."
...While the pulsed laser facility has the advantages of low cost, easy control and precise spatial resolution, which make the laser simulation technique very popular in radiation area [3-6]....
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21 Mar 2013
TL;DR: In this article, the authors aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion, and a sensitivity map of the memory was performed identifying potential error areas and how many errors simultaneously occurred.
Abstract: This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.
Cites background from "LASER system for space environment ..."
...A more complete description of the laser can be found in [1]....
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References
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TL;DR: In this article, a subbandgap two-photon absorption is demonstrated and shown to be a viable alternative to the conventional single photon excitation approach in laser-induced single event effects.
Abstract: Carrier generation based on subbandgap two-photon absorption is demonstrated and shown to be a viable alternative to the conventional single-photon excitation approach in laser-induced single event effects. The two-photon approach exhibits characteristics distinct from those of single-photon excitation, and may be advantageous for a range of single-event effect investigations. The charge track produced by two-photon absorption more closely resembles that of heavy-ion irradiation and, because the photon energy is subbandgap, backside injection through bulk silicon wafers is straightforward and three-dimensional mapping is possible.
252 citations
"LASER system for space environment ..." refers methods in this paper
...Thus, using the TPA technique, the focus can be mechanically placed at any depth inside the integrated circuit [ 5 ]....
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TL;DR: In this article, a model for ion-energy deposition in silicon, based on experimental data of the optical energy loss function, is presented, which yields the characteristics of ion- and electron-interactions in silicon.
Abstract: A model for ion-energy deposition in silicon, based on experimental data of the optical energy loss function, is presented. The model yields the characteristics of ion- and electron-interactions in silicon. Monte Carlo transport calculations based on this model give the energy distribution and its moments including a full and consistent description of the spatial ion track structure. The model was used for estimating the influence of the track structure on energy deposition in submicron devices and on the shape of the single event upsets (SEUs) cross-section curves.
65 citations
"LASER system for space environment ..." refers background in this paper
...1) The spot size of the laser beam defines a unequivocal relationship to the impact energy associated with each ion mass since the surface of charge generation should be the same [1-4]....
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59 citations
TL;DR: In this paper, the relationship between the frequency spectrum of a single-event transient (SET) stimulus and the frequency response of internal circuit blocks of typical operational amplifier architectures has been performed.
Abstract: Using frequency-domain analysis techniques, a study of the relationship between the frequency spectrum of a single-event transient (SET) stimulus and the frequency response of internal circuit blocks of typical operational amplifier architectures has been performed. Results explain several general analog SET (ASET) observations, including the relative importance of the stimulus temporal profile, the circuit bandwidth, and the ion strike location relative to major circuit modules. Benefits gained from frequency compensation are evident, as important filtering of high-frequency signal components occur, reducing detrimental effects on the operation of the circuit.
57 citations
TL;DR: In this article, a transistor-level circuit model of the LM124 operational amplifier specifically engineered and calibrated for analog single-event transient (ASET) computer simulations is presented, relying heavily on datasheet specifications for electrical parameterization and experimental laser probing for dc and transient calibration.
Abstract: This work presents the development of a transistor-level circuit model of the LM124 operational amplifier specifically engineered and calibrated for analog single-event transient (ASET) computer simulations. The techniques presented rely heavily on datasheet specifications for electrical parameterization and experimental laser probing for dc and transient calibration. The resulting circuit model proves to be suitable for broad-beam SET predictions and fault diagnostics for space applications.
52 citations
"LASER system for space environment ..." refers background in this paper
...Boulghassoul (up) [8] and laser irradiations at UCM (down) over LM124....
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