Journal ArticleDOI
Lattice distortion energy spectra of as-grown bismuth thin films and their thickness dependence
V. Damodara Das,N. Jayaprakash +1 more
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TLDR
In this paper, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated and it is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev.Abstract:
Bismuth thin films of various thicknesses between 15 nm and 350 nm were vacuum deposited at room temperature on to glass substrates, immediately after which they were twice heat treated at a uniform rate. During the heat treatment, the resistance changes were monitored and, using these data, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated. It is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev. It is also found that ∫F0 (E) dE oscillates with thickness, which is attributed to the quantum size effect.read more
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Effect of Thermal Annealing on the Characteristics of Bi-Sb Thin Film Structure
TL;DR: The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process and the absorption of Bi-Sb thin film structure was improved to reach 97% at near-infrared region.
References
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Journal ArticleDOI
Kinetics of Processes Distributed in Activation Energy
TL;DR: In this article, the effects produced by the initial distribution, the order of reaction, and the frequency factor are discussed, as well as the complications which can result from successive reactions and varying frequency factors.
Journal ArticleDOI
A theory of the irreversible electrical resistance changes of metallic films evaporated in vacuum
TL;DR: In this article, the decay of lattice distortions is investigated and a characteristic function F0 expressing the law of distribution of the decay energies is formulated, calculated from measurements available and found to be of the expected order, and the shape of this function and the position of its maxima depend on the structure of the support and the thickness of the film.
Journal ArticleDOI
Annealing and thickness effects on the electrical resistance of vacuum-deposited tin antimonide alloy films
V. Damodara Das,M.S. Jagadeesh +1 more
TL;DR: In this article, the initial lattice distortion energy spectra of the films have been determined from the resistance-temperature data, and it is found that the resistivity values for films of different thicknesses are in good agreement with the size effect theory.
Journal ArticleDOI
Thickness dependence of defect density in silver films
TL;DR: In this article, the authors measured the defect density and activation energy of an annealed polycrystalline polysilicon film of thickness 270-1670 A. The defect density F 0 (E ) max varies considerably from 21.4 to 5.25 μΩ cm eV -1 in the thickness range of 270 -1670
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