Patent
Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication
Anthony J. Lochtefeld,Matthew T. Currie,Zhiyuan Cheng,James Fiorenza,G. Braithwaite,T. A. Langdo +5 more
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TLDR
In this paper, the fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations is discussed.Abstract:
Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.read more
Citations
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References
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Journal ArticleDOI
Defects in epitaxial multilayers: I. Misfit dislocations*
J.W. Matthews,A.E. Blakeslee +1 more
TL;DR: In this paper, it was shown that the interfaces between layers were made up of large coherent areas separated by long straight misfit dislocations and the Burgers vectors were inclined at 45° to (001) and were of type 1/2a.
Journal ArticleDOI
Electrically pumped hybrid AlGaInAs-silicon evanescent laser
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Journal ArticleDOI
Etch rates for micromachining processing-Part II
TL;DR: In this paper, the etch rates of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared.
Journal ArticleDOI
Etch rates for micromachining processing
TL;DR: The etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, Ti/W alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-gas-phase etches (several HF solutions, H/sub 3/PO/sub 4), HNO/sub
Journal ArticleDOI
Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
TL;DR: In this article, GaN layers with a dislocation density as low as 6×107 cm-2 were grown on 2-inch-diameter sapphire wafers.