Book ChapterDOI
Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors
Manda Prashanth Kumar,Karunakaran Logesh,Soumya Dutta +2 more
- Vol. 215, pp 69-74
Reads0
Chats0
TLDR
In this article, the authors address the limitations in using Mott-Schottky relationship for organic metal-insulator-semiconductor capacitors as a consequence of deviation from the depletion approximation.Abstract:
The application of Mott-Schottky (MS) relation in organic devices often leads to erroneous results. In particular, the doping density, extracted using this method found to vary with the thickness of semiconductor. We address the limitations in using MS relationship for organic metal-insulator-semiconductor (MIS) capacitors as a consequence of deviation from the depletion approximation.read more
References
More filters
Journal ArticleDOI
Interface states in polymer metal-insulator-semiconductor devices
I. Torres,D. M. Taylor +1 more
TL;DR: In this article, the authors measured the admittance of polymer metal-insulator-semiconductor (MIS) capacitors and revealed the presence of hole trapping states at the interface of the polysilsesquioxane insulator and the poly(3-hexylthiophene) semiconductor.
Journal ArticleDOI
Frequency behavior and the Mott–Schottky analysis in poly(3-hexyl thiophene) metal–insulator–semiconductor diodes
TL;DR: In this paper, the dopant density in metal-insulator-semiconductor diodes with poly(3-hexyl thiophene) as the semiconductor was characterized with impedance spectroscopy as a function of bias, frequency and temperature.
Journal ArticleDOI
Extraction of the Built-in Potential for Organic Solar Cells From Current–Voltage Characteristics
TL;DR: In this paper, a physics-based model and an experimental method were proposed to extract the built-in potential of an organic diode and solar cell from current density-voltage characteristics.
Journal ArticleDOI
Role of Injection Barrier in Capacitance-Voltage Measurements of Organic Devices
TL;DR: In this article, the authors show that prolonged ambient exposure does not significantly increase the unintentional doping density of organic semiconductors (OSCs), and that the observed dispersion in C-V characteristics can be attributed to the variation in the carrier injection barrier at the OSC/electrode interface.
Journal ArticleDOI
Extraction of built-in potential of organic diodes from current-voltage characteristics
TL;DR: In this article, a physics-based method is developed to extract the built-in potential $V_{bi}$ from current density-voltage ($J$-$V$) characteristics.
Related Papers (5)
Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors
Joachim Knoch,Joerg Appenzeller +1 more
Depletion width measurement in an organic Schottky contact using a metal-semiconductor field-effect transistor
Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors
D. M. Taylor,Neri Alves +1 more