Journal ArticleDOI
Linewidth of free excitons in quantum wells: Contribution by alloy disorder scattering
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In this article, a theory for the luminescence linewidth in a quantum well made of ternaries when the two-dimensional free excitons undergo alloy disorder scattering was developed.Abstract:
A theory is developed for the luminescence linewidth in a quantum well made of ternaries when the two‐dimensionally free excitons undergo alloy disorder scattering. The expression for linewidth shows a L−1 dependence on the well width L for infinite barrier height. For thin wells leakage of wave function into the barrier is considered. A comparison between the experimental data and the present values points out the dominant role of alloy disorder scattering. For wells thinner than 40 A the calculated values decrease with decreasing well width, indicating the importance of surface roughness scattering.read more
Citations
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Alloy‐disorder‐induced intrasubband scattering in a quantum well under an electric field
P. K. Basu,D. Raychaudhury +1 more
TL;DR: In this paper, the scattering rates in the lowest subband in a quantum well are calculated for alloy disorder scattering when an electric field is applied perpendicular to the layer plane, and it is shown that the scattering rate increases with increase in the electric field.
Journal ArticleDOI
An optical study of the lateral motion of two-dimensional electron-hole pairs in GaAs/AlGaAs quantum wells
TL;DR: In this paper, the lateral transport of electron-hole pairs in GaAs/AlxGa1-xAs quantum wells (QWS) (0.3 100 K AC scattering and PO scattering are found to dominate the scattering processes).
Journal ArticleDOI
Correlation between the exciton mobility and the excitonic linewidth in shallow InxGa1−xAs/GaAs quantum wells
TL;DR: In this paper, a strong correlation between the exciton mobility and the emission linewidth (LW) was found: high mobilities correspond to small luminescence LWs, indicating reduced exciton scattering.
Journal ArticleDOI
A study of disorder effects in random (AlxGa1−xAs)n(AlyGa1−yAs)m superlattices embedded in a wide parabolic potential
TL;DR: In this article, a photoluminescence (PL) study of the individual electron states localized in a random potential is performed in artificially disordered superlattices embedded in a wide parabolic well.
Journal ArticleDOI
Investigation of the MBE growth of GaAs/AlAs quantum wells and the effect of AlAs spikes on their luminescence
TL;DR: In this article, the interfacial smoothness of GaAs/AlAs quantum well structures is examined using photoluminescence (PL) and reflection high-energy electron diffraction (RHEED).
References
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Book
GaInAsP alloy semiconductors
TL;DR: In this paper, the authors provide an in-depth introduction to the growth, characterization, and device technology of the GaInAsP conductor, the cornerstone of the optical fiber telecommunications industry.
Journal ArticleDOI
Energy levels of Wannier excitons in G a A s − Ga 1 − x Al x As quantum-well structures
TL;DR: In this article, the energy levels of Wannier excitons in a quantum-well structure consisting of a single slab of GaAs sandwiched between two semi-infinite layers of
Journal ArticleDOI
Luminescence linewidths of excitons in GaAs quantum wells below 150 K
TL;DR: In this paper, a theoretical model of the linewidth as a function of temperature (l 150 K) was presented for both heavy-hole and light-hole excitons in a GaAs-${\mathrm{Al}}_{\mathrm{\ensuremath{-}}\mathm{x}}$As quantum well.
Journal ArticleDOI
Alloy broadening in photoluminescence spectra of Al x Ga 1-x As
Journal ArticleDOI
Role of interface roughness and alloy disorder in photoluminescence in quantum‐well structures
Jasprit Singh,K. K. Bajaj +1 more
TL;DR: In this article, a formalism to study the effect of alloy disorder and interface roughness on the linewidths of excitonic emission spectra in quantum-well structures is developed.