Liquid‐Phase Epitaxy of In × GA 1 − × As
01 Nov 1970-Journal of The Electrochemical Society (The Electrochemical Society)-Vol. 117, Iss: 11, pp 1393-1397
TL;DR: In this paper, the ternary phase diagram was calculated using Darken's quadratic formalism to describe the Ternary liquid and assuming the solid solution in equilibrium with the liquid to be regular.
Abstract: layers grown by liquid‐phase epitaxy were obtained in the range of , when grown on the (111 Ga) plane of GaAs. Attempts to grow alloys on the (110), (111 As), (100), and (112 As) planes resulted in polycrystalline layers. The alloy composition was determined by x‐ray fluorescence and the band gap by infrared transmission. The ternary‐phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid and assuming the solid solution in equilibrium with the liquid to be regular. It was found that the experimental results were in good agreement with the calculated phase diagrams. A number of liquidus isotherms were calculated in the temperature range of 700°–1200°C. Gallium arsenide isoconcentration curves are shown for 0.95, 0.90, 0.80, 0.50, and 0.30 mole fraction.
Citations
More filters
TL;DR: In this paper, a simple solution model with Ω=a−bT was used to describe the liquid phase and the solid phase was adequately described using the regular solution model.
336 citations
TL;DR: In this paper, the deformation of the crystal lattice of layers of GaxIn1−xAs (0.5 < x < 1.0) grown onto GaAs substrates by a chemical vapor deposition process was investigated.
Abstract: Deformation of the crystal lattice of layers of GaxIn1−xAs (0.5 < x < 1.0) grown onto GaAs substrates by a chemical vapor deposition process was investigated. For this study, Ga and In were transported as chlorides with HCl and AsH3 was the source of As. It was observed that the lattice constant along the direction of the film thickness was larger than that along the surface. This fact indicates that the crystal lattice of GaxIn1−xAs is compressed along the substrate surface as a result of lattice mismatch. The influence of both the composition of the epitaxial layers and the crystal plane of the substrate surface on the degree of this deformation was investigated. It was also found that the epitaxial orientation grew inclined to the substrate crystal when the crystal surface of the substrate was {100} or {110}.
289 citations
TL;DR: In this article, the authors developed low resistance, refractory ohmic contact materials to n-type GaAs using the deposition and annealing techniques, and it was found that the growth of homo-or hetero-epitaxial intermediate semiconductor layers (ISL) on the GaAs surface was essential for the low resistance Ohmic contact formation.
242 citations
TL;DR: Negative electron affinity (NEA) photocathodes are defined by the relationship between the potential barrier at the surface and the bottom of the conduction band in the bulk of the material as discussed by the authors.
Abstract: Negative electron affinity (NEA) photocathodes are defined by the relationship between the potential barrier at the surface and the bottom of the conduction band in the bulk of the material. If the bottom of the conduction band liesabove the potential barrier at the surface, the device is said to have a negative electron affinity. In practice this condition is obtained by heavyp-doping of the semiconductor (to encourage downward band bending at the surface) and by adding a thin film (several atomic layers) of cesium richcesium oxide on the clean semiconductor surface. The physics, development, fabrication, and applications of the NEA cathode are reviewed.
174 citations
163 citations