Local Electrode Atom Probe Tomography
Citations
276 citations
Cites methods from "Local Electrode Atom Probe Tomograp..."
...For the APT observation, needle-shaped specimens were made, using standard lift-out methods with an FEI Nova focused ion beam (FIB) [44,45]....
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212 citations
Cites methods from "Local Electrode Atom Probe Tomograp..."
...APT specimens were prepared from polished specimen surfaces in a FEI Helios NanoLab 600i FIB/SEM dual beam device (Hillsboro, OR), equipped with a micromanipulator using a conventional liftout technique.(23) Annular focused ion beam (FIB) milling was concluded with a final step at 5 kV acceleration voltage and 40 pA beam current to eliminate any Ga contamination at the specimen surface....
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204 citations
Cites methods from "Local Electrode Atom Probe Tomograp..."
...APT samples were prepared by the Standard Lift-Out Process [46] in a FEI Helios NanoLab 600i FIB/SEM dual beam device, equipped with an Omniprobe micromanipulator....
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202 citations
References
10,546 citations
"Local Electrode Atom Probe Tomograp..." refers background or methods in this paper
...For this example, k has a magnitude of about 5 [1] and has been found to increase with shank angle, α [17–19]....
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...The atom probe was invented in 1967 at the Pennsylvania State University by Müller, Panitz, and McLane [1] as a 1D analytical instrument that collected...
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...Müller, Panitz, and McLane [1] thus settled on measuring time of flight as the way to identify the ions visible in the FIM....
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...the specimen itself is also the image-forming “lens” and the imaging ion beams originate at the specimen surface” [1]....
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...The atom probe was invented in 1967 at the Pennsylvania State University by Müller, Panitz, and McLane [1] as a 1D analytical instrument that collected hundreds of atoms/day with approximately a one-nanometer field of view (FOV)....
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3,569 citations
"Local Electrode Atom Probe Tomograp..." refers background or methods in this paper
...9 SRIM [52] simulation of gallium ion implantation into silicon using (a) 30 keV and (b) 5 keV ions....
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...The evaporation field is typically a function of temperature [50] and sensitive to specimen composition [51] and crystalline orientation [52]....
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...For comparison, simulations of gallium ion implantation into silicon [52] using either 30 or 5 keV ions are shown in Fig....
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1,412 citations
843 citations
739 citations
"Local Electrode Atom Probe Tomograp..." refers background or methods in this paper
...Standard methods were transferred from electron microscopy [2] and applied to metals (though not exclusively) beginning with the...
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...developed what he called the imaging atom probe (IAP) [2] in 1972, Fig....
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...General information on the techniques can be found in any reference book on the atom probe technique [3–9], and a large number of options for electropolishing and chemical polishing solutions may be found [2, 10]....
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..., size, shank angle, composition, reflectivity, absorption coefficient, thermal diffusivity, and band gap) influence how energy is absorbed, converted to heat, and removed from the apex region of the tip [2]....
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...precipitates and evaporation field of the matrix are ignored [1, 2, 23, 65]....
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