Journal ArticleDOI
Local polarization dynamics in ferroelectric materials
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TLDR
In this article, the authors summarize the recent progress in applications of piezoresponse force microscopy (PFM) for imaging, manipulation and spectroscopy of ferroelectric switching processes.Abstract:
Ferroelectrics and multiferroics have recently emerged as perspective materials for information technology and data storage applications. The combination of extremely narrow domain wall width and the capability to manipulate polarization by electric field opens the pathway toward ultrahigh (>10 TBit inch−2) storage densities and small (sub-10 nm) feature sizes. The coupling between polarization and chemical and transport properties enables applications in ferroelectric lithography and electroresistive devices. The progress in these applications, as well as fundamental studies of polarization dynamics and the role of defects and disorder on domain nucleation and wall motion, requires the capability to probe these effects on the nanometer scale. In this review, we summarize the recent progress in applications of piezoresponse force microscopy (PFM) for imaging, manipulation and spectroscopy of ferroelectric switching processes. We briefly introduce the principles and relevant instrumental aspects of PFM, with special emphasis on resolution and information limits. The local imaging studies of domain dynamics, including local switching and relaxation accessed through imaging experiments and spectroscopic studies of polarization switching, are discussed in detail. Finally, we review the recent progress on understanding and exploiting photochemical processes on ferroelectric surfaces, the role of surface adsorbates, and imaging and switching in liquids. Beyond classical applications, probing local bias-induced transition dynamics by PFM opens the pathway to studies of the influence of a single defect on electrochemical and solid state processes, thus providing model systems for batteries, fuel cells and supercapacitor applications.read more
Citations
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Journal ArticleDOI
Domain wall nanoelectronics
Gustau Catalan,Jan Seidel,Jan Seidel,Jan Seidel,Ramamoorthy Ramesh,Ramamoorthy Ramesh,James F. Scott +6 more
TL;DR: In this paper, a review of magnetoelectric domain walls is presented, focusing on magneto-electrics and multiferroics but making comparisons where possible with magnetic domains and domain walls.
Journal ArticleDOI
Emerging memories: resistive switching mechanisms and current status.
Doo Seok Jeong,Reji Thomas,Ram S. Katiyar,James F. Scott,Hermann Kohlstedt,A. Petraru,Cheol Seong Hwang +6 more
TL;DR: The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.
Journal ArticleDOI
Three-dimensional Problems of the Theory of Elasticity. By A. I. Lur’e.1964. (Interscience Publishers)
Journal ArticleDOI
Piezoresponse force microscopy (PFM)
TL;DR: In this article, the technical aspects of PFM for domain imaging are described and a quantitative analysis of the PFM images are presented, with particular attention paid to the quantitative analysis on the quantitative properties of the images.
Journal ArticleDOI
Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials.
TL;DR: The most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures are summarized, and perspectives on some key issues that require further study are presented in order to realize their practical device applications.
References
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TL;DR: The theory of the slipline field is used in this article to solve the problem of stable and non-stressed problems in plane strains in a plane-strain scenario.
Journal ArticleDOI
Atomic force microscope
TL;DR: The atomic force microscope as mentioned in this paper is a combination of the principles of the scanning tunneling microscope and the stylus profilometer, which was proposed as a method to measure forces as small as 10-18 N. As one application for this concept, they introduce a new type of microscope capable of investigating surfaces of insulators on an atomic scale.
Journal ArticleDOI
Multiferroic and magnetoelectric materials
TL;DR: A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements that arises through the quantum mechanical phenomenon of exchange.
Journal ArticleDOI
Epitaxial BiFeO3 multiferroic thin film heterostructures.
Jian Wang,Jeffrey B. Neaton,Haimei Zheng,Valanoor Nagarajan,Satishchandra Ogale,B. T. Liu,Dwight Viehland,V. Vaithyanathan,Darrell G. Schlom,Umesh V. Waghmare,Nicola A. Spaldin,Karin M. Rabe,Manfred Wuttig,Ramamoorthy Ramesh +13 more
TL;DR: Enhanced polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
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