Long-wavelength Si-based MQW photodetectors for application in optical fiber communication
19 Oct 2001-Vol. 4580, pp 243-250
TL;DR: In this article, a Si-based SiGe/Si strained MQW longwavelength photodetectors (PD) with cycle type (Ring Shape) waveguide (CWG) and resonant-cavity-enhanced (RCE) structure was investigated for improving the quantum efficiency and response time.
Abstract: Si-based SiGe/Si strained MQW long-wavelength photodetectors (PD) with cycle type (Ring Shape) waveguide (CWG) and resonant-cavity-enhanced (RCE) structure have been investigated for the first time for improving the quantum efficiency and response time. The results show that the responsivities are higher than that of conventional PD with a same Ge content reported previously. In addition, RCE-PD has an obvious narrow band response with FWHM less than 6nm.
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References
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TL;DR: In this paper, the authors review the family of optoelectronic devices whose performance is enhanced by placing the active device structure inside a Fabry-Perot resonantmicrocavity.
Abstract: We review the family of optoelectronic devices whose performance is enhanced by placing the active device structure inside a Fabry‐Perot resonantmicrocavity. Such resonantcavity enhanced (RCE) devices benefit from the wavelength selectivity and the large increase of the resonant optical field introduced by the cavity. The increased optical field allows RCE photodetector structures to be thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. Off‐resonance wavelengths are rejected by the cavity making RCE photodetectors promising for low crosstalk wavelength division multiplexing(WDM) applications. RCE optical modulators require fewer quantum wells so are capable of reduced voltage operation. The spontaneous emission spectrum of RCE light emitting diodes(LED) is drastically altered, improving the spectral purity and directivity. RCE devices are also highly suitable for integrated detectors and emitters with applications as in optical logic and in communication networks. This review attempts an encyclopedic overview of RCE photonicdevices and systems. Considerable attention is devoted to the theoretical formulation and calculation of important RCE device parameters. Materials criteria are outlined and the suitability of common heteroepitaxial systems for RCE devices is examined. Arguments for the improved bandwidth in RCE detectors are presented intuitively, and results from advanced numerical simulations confirming the simple model are provided. An overview of experimental results on discrete RCE photodiodes, phototransistors, modulators, and LEDs is given. Work aimed at integrated RCE devices,optical logic and WDM systems is also covered. We conclude by speculating what remains to be accomplished to implement a practical RCE WDM system.
668 citations
TL;DR: In this article, a Si1-xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 mu m was reported.
Abstract: We report on a Si1-xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 mu m. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/mu m(2). The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 mu m and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 mu m is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang [Appl. Phys. Lett. 67, 566 (1995)]. (C) 2000 American Institute of Physics. [S0003-6951(00)00628-8].
28 citations
"Long-wavelength Si-based MQW photod..." refers background in this paper
...RCE photodetector is the available candidate for the realization of the function of selectable narrow bandwidth photo-detecting [4j[5] The essential part is a Fabry-Perot cavity with both DBR mirrors sandwiching a MQW active absorption layer....
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...[5] Cheng Li, Qinqing Yang, Hongjie Wang, Jialian Zhu, Liping Luo, Jinzhong Yu, Qiming Wang, Yongkang Li, Junming Zhou, Chenglu Lin, " Si1Ge/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near l....
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TL;DR: In this paper, the effect of Si-Ge interdiffusion in the Si-SiGe interface during the growth process of a SiGe-Si multiple-quantum-well (MQW) waveguide was analyzed.
Abstract: Because of Si-Ge interdiffusion in the Si-SiGe interface during the growth process, the square-wave refractive index distribution of a SiGe-Si multiple-quantum-well (MQW) will become smooth. In order to simulate the actual refractive index profile, a staircase approximation is applied. Based on this approach, the dispersion equation of the MQW waveguide is obtained by using a transfer matrix method. The effects of index changes caused by the interdiffusion on the optical field and the characteristics of the photodetector are evaluated by solving the dispersion equation. It is shown that the Si-Ge interdiffusion can result in a reduction of the effective absorption coefficient and the quantum efficiency.
5 citations
"Long-wavelength Si-based MQW photod..." refers background in this paper
...[6] Yuqing Zhu, Qinqing Yang, and Qiming Wang, "Effect of Si-Ge interdiffusion on the waveguide properties of SiGeSi MQW photodetector", IEEE J....
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TL;DR: In this paper, the authors reported on the fabrication of circular waveguide photodetectors with a response near 1.3 mu m wavelength using SiGe/Si multiple quantum wells.
3 citations
"Long-wavelength Si-based MQW photod..." refers background in this paper
...[3] Cheng Li, Qinqing Yang, Hongjie Wang, buweng Cheng, Jinzhong Yu, Qiming Wang, " Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells", Optical Materials 14, pp....
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