Journal ArticleDOI
Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
Kulbinder K. Banger,Yoshihisa Yamashita,Kiyotaka Mori,Rebecca L. Peterson,Rebecca L. Peterson,Timothy J. Leedham,J. Rickard,Henning Sirringhaus +7 more
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TLDR
The formation of amorphous metal oxide semiconducting thin-films using a ‘sol–gel on chip’ hydrolysis approach from soluble metal alkoxide precursors affords unprecedented high field-effect mobilities, reproducible and stable turn-on voltages Von≈0 V and high operational stability at maximum process temperatures as low as 230 °C.Abstract:
A low-temperature, solution-based preparation of amorphous, metal oxide semiconducting thin-films is reported. This ‘sol–gel on chip’ hydrolysis approach yields thin-film transistors with high field-effect mobilities, reproducible and stable turn-on voltages and high operational stability.read more
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
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Lab-on-Skin: A Review of Flexible and Stretchable Electronics for Wearable Health Monitoring
TL;DR: The term "lab-on-skin" is introduced to describe a set of electronic devices that have physical properties, such as thickness, thermal mass, elastic modulus, and water-vapor permeability, which resemble those of the skin, which provide accurate, non-invasive, long-term, and continuous health monitoring.
Journal ArticleDOI
Metal oxides for optoelectronic applications
TL;DR: This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin- film transistors, solar cells, diodes and memories.
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Oxygen vacancies confined in ultrathin indium oxide porous sheets for promoted visible-light water splitting.
TL;DR: Theoretical/experimental results reveal that the O-vacancies endow 5-atom-thick In2O3 sheets with a new donor level and increased states of density, hence narrowing the band gap from the UV to visible regime and improving the carrier separation efficiency.
Journal ArticleDOI
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
TL;DR: A review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS) is provided in this paper.
References
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Book
Sol-Gel Science: The Physics and Chemistry of Sol-Gel Processing
TL;DR: Gel-Derived and Conventional Ceramics: as discussed by the authors Theoretical analysis of deformation and flow in gels and a comparison of gel-derived and conventional ceramics.
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Fundamentals of zinc oxide as a semiconductor
TL;DR: In this article, the status of zinc oxide as a semiconductor is discussed and the role of impurities and defects in the electrical conductivity of ZnO is discussed, as well as the possible causes of unintentional n-type conductivity.
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Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
TL;DR: In this paper, the effect of water exposure on amorphous indium-gallium-zinc oxide (a-IGZO) semiconductors was investigated and two competing mechanisms depending on the thickness of the active channel were clarified.
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X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films
TL;DR: In this paper, the In and Sn 3d3/2 and 3d5/2 ESCA peaks and the oxygen 1s peak of Sn-doped In2O3 films were compared with those for In 2O3, SnO, Sn2O2, and Sn3O4 powders.