Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at approximately 2.0 mu m
TL;DR: The first low threshold continuous operation of InGaAs strained layer quantum well lasers at about 2.0 microns is reported in this paper, where the threshold current density of 5-micron wide and 1.5 mm long ridge waveguide lasers was less than 380 A/sq cm.
Abstract: The first low threshold continuous operation of InGaAs strained layer quantum well lasers at about 2.0 microns is reported. The threshold current density of 5-micron wide and 1.5 mm long ridge waveguide lasers was less than 380 A/sq cm. The external differential quantum efficiency of 1 mm long lasers was as high as 15 percent and laser operation was observed at temperatures as high as 50 C. The lasers are characterized by T(0) = 54 C which is the highest characteristic temperature ever achieved at this wavelength in any material system.
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TL;DR: A tunable quantum-cascade (QC) laser has been flown on NASA's ER-2 high-altitude aircraft to produce the first atmospheric gas measurements with this newly invented device, an important milestone in the QC laser's future planetary, industrial, and commercial applications.
Abstract: A tunable quantum-cascade (QC) laser has been flown on NASA’s ER-2 high-altitude aircraft to produce the first atmospheric gas measurements with this newly invented device, an important milestone in the QC laser’s future planetary, industrial, and commercial applications. Using a cryogenically cooled QC laser during a series of 20 aircraft flights beginning in September 1999 and extending through March 2000, we took measurements of methane (CH4) and nitrous oxide (N2O) gas up to ∼20 km in the stratosphere over North America, Scandinavia, and Russia. The QC laser operating near an 8-µm wavelength was produced by the groups of Capasso and Cho of Bell Laboratories, Lucent Technologies, where QC lasers were invented in 1994. Compared with its companion lead salt diode lasers that were also flown on these flights, the single-mode QC laser cooled to 82 K and produced higher output power (10 mW), narrower laser linewidth (17 MHz), increased measurement precision (a factor of 3), and better spectral stability (∼0.1 cm-1 K). The sensitivity of the QC laser channel was estimated to correspond to a minimum-detectable mixing ratio for methane of approximately 2 parts per billion by volume.
110 citations
TL;DR: In this paper, high-power diode lasers emitting at /spl sim/1.9 /spl mu/m have been fabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAs Sb barriers.
Abstract: High-power diode lasers emitting at /spl sim/1.9 /spl mu/m have been fabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. For devices 300 /spl mu/m wide and 1000 /spl mu/m long, single-ended output power as high as 1.3 W cw has been obtained with an initial differential quantum efficiency of 47%. The pulsed threshold current density is as low as 143 A/cm/sup 2/ for 2000-/spl mu/m-long devices. >
85 citations
TL;DR: In this article, the growth of small band gap (Eg∼0.6 ǫeV) strained and lattice matched single crystal InGaAsN alloys on InP substrates was demonstrated.
Abstract: We demonstrate the growth of small band gap (Eg∼0.6 eV) strained and lattice matched single crystal InGaAsN alloys on InP substrates. InGaAsN layers with N concentrations varying from 0.6% to 3.25% were grown by gas source molecular beam epitaxy using a radio frequency plasma nitrogen source. Lattice-matched, 0.5-μm-thick InGaAsN layers with smooth surface morphologies and abrupt interfaces were achieved. Low temperature photoluminescence measurements reveal a band gap emission wavelength of 1.9 μm (at 20 K) for lattice matched InGaAsN (N∼2%). Tensile strained In0.53Ga0.47As/In0.53Ga0.47As0.994N0.006 multiple quantum wells emitting at 1.75 μm at 20 K are also reported.
69 citations
TL;DR: In this paper, a distributed-feedback (DFB) buried-heterostructure (BH) laser with quantum-well active region emitting at 2.0 /spl mu/m has been fabricated and characterized.
Abstract: Distributed-feedback (DFB) buried-heterostructure (BH) lasers with quantum-well active region emitting at 2.0 /spl mu/m have been fabricated and characterized. The lasers with four wells showed performance of practical use: threshold current as low as 15 mA for 600-/spl mu/m-long devices and CW single-mode output up to 5 mW at 2.03 /spl mu/m under operation current of 100 mA were observed. The current- and temperature-tuning rates of DFB mode wavelength are 0.004 nm/mA and 0.125 nm/K, respectively.
48 citations
TL;DR: In this article, a discrete-mode laser diode fabricated in the InGaAs/InP multiple quantum-well system and emitting single mode at λ = 2 μm was reported.
Abstract: A discrete-mode laser diode fabricated in the InGaAs/InP multiple quantum-well system and emitting single mode at λ = 2 μm is reported. The laser had an ex-facet output power >;5 mW at 25 °C and the laser operated mode-hop free in the temperature range -5 °C-55 °C.
38 citations
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TL;DR: The first successful operation of InGaAs strained layer quantum well (Sl-QW) injection laser at about 2 microns was reported in this article, where the threshold current density and the external differential quantum efficiency of 5 microns wide and 800 microns long ridge waveguide laser were 25 kA/sq cm and 6 percent, respectively.
Abstract: The first successful operation of InGaAs strained layer quantum well (Sl-QW) injection lasers at about 2 microns is reported The threshold current density and the external differential quantum efficiency of 5 microns wide and 800 microns long ridge waveguide lasers were 25 kA/sq cm and 6 percent, respectively The devices had a reverse leakage current of less than 20 micro-A at -1 V indicating epitaxial layers with low defect density
77 citations
TL;DR: In this article, the static properties of step and continuously graded single and multiple quantum well InGaAs/InP lasers grown by atmospheric pressure metalorganic vapor phase epitaxy have been examined.
Abstract: We have examined static properties of step and continuously graded single and multiple quantum well InGaAs/InP lasers grown by atmospheric pressure metalorganic vapor phase epitaxy. Systematic changes in the band gap of InGaAsP waveguide layers have resulted in lasers with low threshold current ( 1000 A) gain profile.
29 citations