Journal ArticleDOI
Low threshold InGaAsN/GaAs lasers beyond 1500 nm
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TLDR
In this paper, a threshold current density of 690 A/cm 2 was achieved for an emission wavelength of 1400nm with 1200μm long devices. But no indications for 3D growth are detected and carrier localization is below 25meV.About:
This article is published in Journal of Crystal Growth.The article was published on 2005-05-01. It has received 106 citations till now. The article focuses on the topics: Quantum well & Molecular beam epitaxy.read more
Citations
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Band engineering in dilute nitride and bismide semiconductor lasers
Christopher A. Broderick,Christopher A. Broderick,Muhammad Usman,Stephen J. Sweeney,Eoin P. O'Reilly,Eoin P. O'Reilly +5 more
TL;DR: In this article, the effects of spin-orbit-splitting energy on the dominant Auger recombination loss mechanism were investigated for high-mismatched semiconductor alloys such as GaInNAs and GaBiAs.
Journal ArticleDOI
Band engineering in dilute nitride and bismide semiconductor lasers
Christopher A. Broderick,Christopher A. Broderick,Muhammad Usman,Stephen J. Sweeney,Eoin P. O'Reilly,Eoin P. O'Reilly +5 more
TL;DR: In this paper, the electronic structure of GaNAs and GaBiAs has been reviewed and their consequences for ideal lasers have been discussed, and substantial progress has been made in the demonstration of actual GaInNAs telecomm lasers.
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High-brightness long-wavelength semiconductor disk lasers
TL;DR: In this article, a review on the recent developments in the field of longwavelength (A > 1.2 μm) high-brightness optically-pumped semiconductor disk lasers (OPSDLs) is presented.
Journal ArticleDOI
Next-generation mid-infrared sources
TL;DR: In this article, the authors present an overview of the current state-of-the-art mid-IR sources, in particular thermal emitters, which have long been utilized, and the relatively new quantumand interband-cascade lasers, as well as the applications served by these sources.
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Recent Progress on 1.55- $\mu{\hbox {m}}$ Dilute-Nitride Lasers
Seth R. Bank,Hopil Bae,Lynford L. Goddard,Homan Yuen,Mark A. Wistey,Robert Kudrawiec,James S. Harris +6 more
TL;DR: In this article, a review of the recent developments in GaAs-based 1.55mum lasers grown by molecular beam epitaxy (MBE) is presented, including the nitrogen plasma conditions, ion removal from the nitrogen flux, surfactant- mediated growth, the roles of various V-II ratios, the growth temperature, the active region thermal budget, proper annealing, and composition.
References
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Journal ArticleDOI
Native point defects in low-temperature-grown GaAs
TL;DR: In this article, structural and electronic data indicate that the dominant defects in GaAs grown at low temperatures (LT GaAs) by molecular beam epitaxy (MBE) are As antisites (AsGa) and Ga vacancies (VGa), with negligible amounts of As interstitials (Asi).
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Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well
L. Grenouillet,Catherine Bru-Chevallier,Gérard Guillot,P. Gilet,P. Duvaut,C. Vannuffel,A. Million,A. Chenevas-Paule +7 more
TL;DR: In this paper, an anomalous temperature dependence of the photoluminescence spectrum of a 7 nm Ga0.72In0.28N0.028As0.972/GaAs single quantum well was reported.
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Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
TL;DR: In this paper, metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm2 (for L=2000 μm) and 75 A/m2, respectively.
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Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs
TL;DR: In this article, the first continuous-wave edge-emitting GaAs-based laser operation beyond 1.5 µm was reported, with a threshold current density of 1.06 kA/cm/sup 2, external quantum efficiency of 31%, and characteristic temperature T/sub 0/ of 139 K.
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Growth of high quality InGaAsN heterostructures and their laser application
A.Yu. Egorov,D. Bernklau,B. Borchert,S. Illek,D. A. Livshits,A. Rucki,M. Schuster,A. Kaschner,Axel Hoffmann,Gh. Dumitras,Markus-Christian Amann,Henning Riechert +11 more
TL;DR: In this paper, the optimization of growth to achieve high quality laser material for emission at 1.3 μm and beyond was studied, and a decrease of single quantum well transparency current density down to 100 A/cm 2 was found and SWQ lasers with threshold current densities as low as 350 A/m 2 were made.