Journal ArticleDOI
Low-voltage pentacene organic field-effect transistors with high-κ HfO2 gate dielectrics and high stability under bias stress
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In this article, a low-voltage pentacene organic field effect transistors are demonstrated with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at 200 °C.Abstract:
Low-voltage pentacene organic field-effect transistors are demonstrated (operating voltage of −3 V) with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at 200 °C. A high hole mobility of 0.39 cm2/V s with low threshold voltage (<−0.5 V) and low subthreshold slope of 120 mV/dec is achieved with a HfO2 dielectric layer modified with a phosphonic acid based treatment. A high value of 94.8 nF/V s is obtained for the product of mobility and capacitance density. The devices show excellent bias stress stability with or without the phosphonic acid at the HfO2 gate dielectric surface.read more
Citations
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Journal ArticleDOI
SrTiO3 insulator for low-voltage organic field-effect transistors
Hu Yan,Hidenori Okuzaki +1 more
TL;DR: In this paper, three kinds of approaches have been mainly proposed and studied in order to achieve low-voltage organic field effect transistors (FETs) are considered to be used as high-end electronics and low-end ones.
Journal ArticleDOI
Low-voltage pentacene field-effect transistors with high mobility and unusual change of the mobility by simple storage
TL;DR: Pentacene field effect transistors (FETs), fabricated on strontium titanate without self-assembled monolayer, showed mobility as high as 1.9 cm 2 /V/s at operating voltage as low as −3 V as mentioned in this paper.
Journal ArticleDOI
Pentacene bottom-contact thin film transistors with solution-processed BZT gate dielectrics
TL;DR: To reduce the transistor threshold voltage, higher work function metals (Au) is used as the gate electrodes and solution-processed high-k barium zirconate titanate (BZT) as gate dielectrics for bottom-gate pentacene-based organic thin film transistor (OTFT) applications is presented.
Journal ArticleDOI
Study of Organic Thin Film Transistors on Ultraviolet-Curable Dielectrics with Periodic Patterns Fabricated by Nano Imprint Technology
Henry J. H. Chen,Jun-Yu Chen +1 more
TL;DR: In this paper, the organic thin film transistors (OTFTs) on UV-curable dielectrics with periodic patterns fabricated by nano imprint technology were investigated, and the surface morphologies of pentacene and device performances with respect to line/space ratio of periodic patterns were studied.
References
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Flexible active-matrix displays and shift registers based on solution-processed organic transistors.
Gerwin H. Gelinck,H. Edzer A. Huitema,Erik van Veenendaal,Eugenio Cantatore,Laurens Schrijnemakers,Jan B.P.H. Philips Ip Standards Van Der Putten,Tom C. T. Geuns,Monique J. Beenhakkers,Jacobus Bernardus Giesbers,Bart-Hendrik Huisman,Eduard J. Meijer,Estrella Mena Benito,Fredericus J. Touwslager,Albert W. Marsman,Bas Jan Emile Van Rens,Dago M. de Leeuw +15 more
TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Low-Temperature Al2O3 Atomic Layer Deposition
TL;DR: In this article, the properties of low-temperature Al2O3 ALD films were investigated versus growth temperature by depositing films on Si(100) substrates and quartz crystal microbalance (QCM) sensors.
Book
Semiconductor device fundamentals
TL;DR: Semiconductor Models -- A General Introduction, Field Effect Introduction -- the J-FET and MESFET, and Electrostatics -- Mostly Qualitative Formulation.
Journal ArticleDOI
All-organic active matrix flexible display
TL;DR: In this article, a pentacene organic thin-film transistor (OTFT) driven active matrix organic light-emitting diode (OLED) displays on flexible polyethylene terephthalete substrates were fabricated.
Journal ArticleDOI
Progress Toward Development of All-Printed RFID Tags: Materials, Processes, and Devices
Vivek Subramanian,Jean M. J. Fréchet,Paul Chang,D. C. Huang,J.B. Lee,Steven Molesa,Amanda R. Murphy,D.R. Redinger,Steven K. Volkman +8 more
TL;DR: Progress is reported on in developing materials, processes, and devices for the realization of ultralow-cost printed RFID tags using novel pentacene and oligothiophene precursors for pMOS and ZnO nanoparticles for nMOS.