Magnetic and electrical properties of Zno/La0.7Sr0.3MnO3 heterostructures
12 Jul 2019-Vol. 2115, Iss: 1, pp 030333
TL;DR: ZnO/La07Sr03MnO3 (LSMO) heterostructures with different ZnO thickness were grown on (001) oriented silicon (Si) substrates by using RF-magnetron sputtering as discussed by the authors.
Abstract: ZnO/La07Sr03MnO3 (LSMO) heterostructures with different ZnO thickness were grown on (001) oriented silicon (Si) substrates by using RF-magnetron sputtering The x-ray diffraction confirmed that the ZnO was grown epitaxially on LSMO/Si The out-of-plane lattice parameter (3863 A) of LSMO film on Si experience 06 % strain, while that of ZnO experience 007 % The heterostructure shows paramagnetic to ferromagnetic transition around 300 K, relatively lower that the bulk LSMO The electrical transport in the heterostructure is non-linear and exhibits a transition from insulator like-to-metal like behavior on decreasing temperature from 300 K to 10 K The study of this heterostructure may provide useful information for the future development of Si based electronic devices using oxide materials
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TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...
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TL;DR: Wurtzitic ZnO is a widebandgap semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films as discussed by the authors.
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TL;DR: In this paper, a p-n junction, consisting of p-type manganite (La0.7Sr0.3MnO3) and n-type ZnO layers grown on sapphire substrate, was fabricated.
Abstract: We have fabricated a p–n junction, consisting of p-type manganite (La0.7Sr0.3MnO3) and n-type ZnO layers grown on sapphire substrate. This junction exhibits excellent rectifying behavior over the temperature range 20–300 K. Electrical characteristics of La0.7Sr0.3MnO3 (LSMO) film in this heterostructure are found to be strongly modified by the built-in electric field at the junction. It has been shown that by applying the external bias voltage, the thickness of the depletion layer, and hence, the electrical and magnetic characteristics of LSMO film can precisely be modified.We have fabricated a p–n junction, consisting of p-type manganite (La0.7Sr0.3MnO3) and n-type ZnO layers grown on sapphire substrate. This junction exhibits excellent rectifying behavior over the temperature range 20–300 K. Electrical characteristics of La0.7Sr0.3MnO3 (LSMO) film in this heterostructure are found to be strongly modified by the built-in electric field at the junction. It has been shown that by applying the external bias voltage, the thickness of the depletion layer, and hence, the electrical and magnetic characteristics of LSMO film can precisely be modified.
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TL;DR: In this article, the fabrication of p-n junctions, consisting of a p-type La07Sr03MnO3 (LSMO) and either n-type ZnO grown on sapphire or Si substrates, was reported.
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TL;DR: In this paper, the La 0.8 Sr 0.2 MnO 3 /ZnO p-n junctions with different thicknesses of ZnO films are fabricated by using RF magnetron sputtering technique.
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